Topic
Band offset
About: Band offset is a research topic. Over the lifetime, 2446 publications have been published within this topic receiving 53450 citations.
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TL;DR: In this article, the capacitance versus voltage (C-V ) and current versus voltage measurements on n-GaAs/p-Si (n ≈ 10 16 cm −3 ) heterojunction diodes were used to investigate the GaAs/Si band lineup.
Abstract: The GaAs/Si heterojunction band lineup has been investigated using capacitance versus voltage ( C-V ) and current versus voltage ( I-V ) measurements on n-GaAs/p-Si (n ≈ 10 16 cm −3 ) heterojunction diodes. Such an approach was possible because of the fabrication of diodes with near-ideal characteristics; ideality factors of less than 1.10 were deduced from forward bias I-V measurements. The heterojunction built-in voltage was determined by extrapolation from C −2 - V plots, and band offsets of Δ E C = 0.03 eV and Δ E V = 0.27 eV were calculated at 300 K for the conduction and valence bands, respectively. The heterojunction energy band diagram was constructed, I-V measurements at various temperatures in the vicinity of 300 K were used to extract the potential barrier to electron transport across the junction, and the results were consistent with those from C-V . The results also agree well with theoretical models.
13 citations
TL;DR: In this article, the changes in X-ray excited valence bands of silicon oxide with progress of oxidation of a Si(111) surface in 1 Torr dry oxygen at 600-800°C were studied at initial stage of oxidation.
13 citations
TL;DR: The characteristics of p-channel Ge/Si hetero-nanocrystal based MOSFET memory have been investigated numerically considering mainly hole-tunneling process and the present structure shows that the holes have a longer retention time.
13 citations
TL;DR: In this paper, the authors investigated the electronic transport properties, photocatalytic reaction mechanism and optical properties of novel g-C6N6/GaS heterojunction.
13 citations
TL;DR: In this article, the authors measured interface defect densities and conduction-band offset energies for liquid-phase epitaxially grown n−N isotype In0.53Ga0.47As/InP heterojunctions using capacitance-voltage methods.
Abstract: Interface charge densities and conduction‐band offset energies for liquid‐phase epitaxially grown n‐N isotype In0.53Ga0.47As/InP heterojunctions have been measured using capacitance‐voltage methods. Extremely low interface charge densities have been obtained in some samples, and they are found to be independent of both the measurement temperature and the magnitude of lattice mismatch. Our samples show a clear peak and notch in the apparent free‐carrier concentration profile at temperatures as low as 83 K. This is in contrast to results reported previously where the notch, due to the carrier depletion at the heterojunction, was observed to vanish at low temperature. An electron trap has been identified in one of the samples. The trap is uniformly distributed within the bulk of the In0.53Ga0.47As layer at a density of 5×1014 cm−3. In spite of the presence of this relatively low density defect, the heterojunctions grown for this study apparently have considerably lower interface defect densities than observe...
13 citations