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Band offset

About: Band offset is a research topic. Over the lifetime, 2446 publications have been published within this topic receiving 53450 citations.


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Journal ArticleDOI
TL;DR: In this article, the effect of band-band impact ionization, band band Auger recombination, and p-n junction structure on heterojunction solar cell efficiencies is investigated.
Abstract: This paper reports a theoretical study of heterojunction solar cell efficiencies to include the effect of band - band impact ionization, the band - band Auger recombination and the p - n junction structure. We also study conditions under which configuration A (light encounters the large energy gap first) or configuration B (light encounters the small energy gap first) is the optimal heterojunction configuration for a solar cell, other conditions being kept fixed. Constant efficiency contour diagrams having the energy gaps as axes show that, subject to our assumptions, the best efficiencies are only of order 38% for a black body equivalent to one sun. The higher efficiencies are favoured by the smaller semiconductor widths. Open-circuit voltage, short-circuit current density and fill factor are also calculated for several sets of cell parameters.

13 citations

Journal ArticleDOI
TL;DR: The experimental THz-excitation spectroscopy technique for determining heterojunction band offsets is suggested, and the deduced conduction band offset of GaAsBi-GaAs heteroj junction has about 45% of an energy gap difference at the Bi concentrations x < 0.12 investigated.
Abstract: The experimental THz-excitation spectroscopy technique for determining heterojunction band offsets is suggested. When photoexcited electrons gain sufficient energy to pass the potential barrier corresponding to a conduction band offset, an amplitude of THz-emission pulse sharply increases, which allows for direct measurements of the offset value. The technique is applied for determining GaAsBi-GaAs band offsets. The deduced conduction band offset of GaAsBi-GaAs heterojunction has about 45% of an energy gap difference at the Bi concentrations x < 0.12 investigated.

13 citations

Journal ArticleDOI
TL;DR: In this paper, a quasi-analytical calculation of the heterojunction between hydrogenated amorphous silicon (a-Si:H) and crystalline silicon (c-Si) at equilibrium is presented.
Abstract: We report a quasi-analytical calculation describing the heterojunction between hydrogenated amorphous silicon (a-Si:H) and crystalline silicon (c-Si) at equilibrium. It has been developed and used to determine the carrier sheet density in the strongly inverted layer at the a-Si:H/ c-Si interface. The model assumes an exponential band tail for the defect distribution in a-Si:H. The effects of the different parameters involved in the calculation are investigated in detail, such as the Fermi level position in a-Si:H, the density of states and the band offsets. The calculation was used to interpret temperature dependent planar conductance measurements carried out on (n) a-Si:H/ (p) c-Si and (p) a-Si:H/(n) c-Si structures, which allowed us to confirm a previous evaluation of the conduction band offset, ∆EC = 0.18 ± 0.05 eV, and to evaluate the valence band offset: ∆EV = 0.36 ± 0.05 eV at the a-Si:H/ c-Si heterojunction. The results are placed in the frame of recent publications.

13 citations

Journal ArticleDOI
S. Lankes1, T. Reisinger1, B. Hahn1, C. Meier1, M. Meier1, Wolfgang Gebhardt1 
TL;DR: In this paper, photoreflectance (PR) and photoluminescence excitation (PLE) spectroscopy was used to estimate the transition energies of single quantum well structures.

13 citations

Journal ArticleDOI
TL;DR: In this paper, the authors demonstrate the first vertically stacked few-layered p-type GaSe and n-type SnS2 vdW heterostructures for high-performance optoelectronic applications and show that the phototransistors based on a few-layer GaSe/SnS2 p-n junction show superior performance with the responsivity, EQE and specific detectivity as high as ~35 AW−1, 62%, and 8.2 × 1024 J.

13 citations


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Performance
Metrics
No. of papers in the topic in previous years
YearPapers
202336
202267
202178
202085
201980
201882