Topic
Band offset
About: Band offset is a research topic. Over the lifetime, 2446 publications have been published within this topic receiving 53450 citations.
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13 citations
TL;DR: In this article, the optical properties of nanoscale InAs quantum dots in a Si matrix were investigated and it was shown that 7 ML InAs leads to the formation of coherent islands with dimensions in the 2-4 nm range with high sheet density.
Abstract: We report on the optical properties of nanoscale InAs quantum dots in a Si matrix. At a growth temperature of 400°C, the deposition of 7 ML InAs leads to the formation of coherent islands with dimensions in the 2–4 nm range with a high sheet density. Samples with such InAs quantum dots show a luminescence band in the 1.3 μm region for temperatures up to ∼170 K . The PL shows a pronounced blue shift with increasing excitation density and decays with a time constant of 440 ns. The optical properties suggest an indirect type II transition for the InAs/Si quantum dots. The electronic structure of InAs/Si QDs is discussed in view of available band offset information.
13 citations
TL;DR: In this paper, the valence band offsets in Si/Si1-yGey/Si strained-layer heterostructures with 0
Abstract: The valence band offsets in Si/Si1-yGey/Si strained-layer heterostructures with 0
13 citations
TL;DR: X-ray photoelectron spectroscopy data indicated that an intermediate compound, containing Al and Te, was formed at the AlSb/ZnTe(100) interface, suggesting that chemical reactivity at the alchemical interfaces can exert a significant influence on band offset values.
Abstract: We have used x-ray photoelectron spectroscopy to measure valence-band offsets in situ for AlSb/ZnTe, AlSb/GaSb, and GaSb/ZnTe(100) heterojunctions grown by molecular-beam epitaxy. For the AlSb/ZnTe heterojunction, a valence-band offset ΔEv=0.42±0.07 eV was obtained. Our data indicated that an intermediate compound, containing Al and Te, was formed at the AlSb/ZnTe(100) interface. Measurements of the AlSb/GaSb and GaSb/ZnTe valence-band offsets demonstrated a clear violation of band offset transitivity for the AlSb/GaSb/ZnTe material system, suggesting that chemical reactivity at the AlSb/ZnTe and GaSb/ZnTe interfaces can exert a significant influence on band offset values. Direct evidence of the influence of interfacial growth conditions on the AlSb/ZnTe and GaSb/ZnTe band offset values was also observed.
13 citations
TL;DR: In this paper, the optical gain in ZnSe blue semiconductor lasers was calculated theoretically for various band structures, such as a bulk band structure and a quantum well (QW) structure.
13 citations