scispace - formally typeset
Search or ask a question
Topic

Band offset

About: Band offset is a research topic. Over the lifetime, 2446 publications have been published within this topic receiving 53450 citations.


Papers
More filters
Journal ArticleDOI
TL;DR: In this paper, a non-local model potential was developed for nitrogen and used to calculate the energy band structures of GaN and A1N and the resulting band structures were found to be in good agreement with optical data for these materials.

65 citations

Journal ArticleDOI
TL;DR: In this article, the authors showed a reduction of the conduction band offset from (0.63±0.03) eV to (0 48±0 eV when the Mg content is below 1.6 eV.

64 citations

Journal ArticleDOI
TL;DR: In this article, the optical properties of nanoscale InAs quantum dots (QDs) in a Si matrix were investigated and it was shown that 7 ML InAs leads to the formation of coherent islands with dimensions in the 2-4 nm range.
Abstract: We investigate the optical properties of nanoscale InAs quantum dots (QDs) in a Si matrix. At a growth temperature of 400 °C, the deposition of 7 ML InAs leads to the formation of coherent islands with dimensions in the 2–4 nm range. A luminescence band in the 1.3 μm region found exclusively for samples with such InAs QDs exhibits a pronounced excitation density dependence of the peak position and a decay time of 440 ns. The optical properties suggest an indirect type II transition for InAs/Si QDs. The electronic structure of InAs/Si QDs is discussed in view of available band offset information.

64 citations

Journal ArticleDOI
TL;DR: Based on a sophisticated crystal structure prediction method, this article proposed two-dimensional (2D) GeP2 in the tetragonal (T) phase never observed for other group IV-V compounds.
Abstract: Based on a sophisticated crystal structure prediction method, we propose two-dimensional (2D) GeP2 in the tetragonal (T) phase never observed for other group IV–V compounds. The bulk of 2D GeP2 is more stable than both 2D orthogonal (O) and three-dimensional pyrite (P) phases that have been experimentally observed for group IV–V compounds. According to our calculations of phonon dispersion relations and elastic constants, as well as ab initio molecular dynamics simulation, monolayers of both the T and O phases (penta-GeP2 and O-GeP2, respectively) are dynamically, mechanically, and thermally stable. In addition, our HSE06 calculation shows that these monolayers are semiconductors with band gaps in the visible region. Among the various stacking patterns of their bilayers, specific ones are identified to be most stable, which are still semiconductors with band gaps redshifted in the visible region. Different from the case of their bulk, few-layers of O-GeP2 are more stable than those of penta-GeP2 up to a pentalayer. Furthermore, band offset with respect to the Fermi levels of appropriate half-reactions shows that both n-type few-layer penta-GeP2 and O-GeP2 can be useful in photocatalyzed CO2 splitting to CO as well as in photocatalyzed water splitting, specifically under acidic conditions.

63 citations

Journal ArticleDOI
TL;DR: Perego et al. as discussed by the authors used high-resolution x-ray photoemission spectroscopy to study the valence and conduction band offsets at GeO2/Ge(001) interface.
Abstract: High quality GeO2 dielectrics were prepared on Ge(001) surface by direct atomic source oxidation. The band alignments have been studied by using high resolution x-ray photoemission spectroscopy. The valence and conduction band offsets at GeO2/Ge(001) interface are 4.59±0.03 and 0.54±0.03 eV, respectively. The calculated projected density of states indicate that the formation of germanium and oxygen vacancies at different oxidation stages might result in the reduction of valence band offsets, which clarified the varied experimental results of valence band offset [M. Perego et al., Appl. Phys. Lett. 90, 162115 (2007) and V. V. Afanas’ev and A. Stesmans, Appl. Phys. Lett. 84, 2319 (2004)].

63 citations


Network Information
Related Topics (5)
Band gap
86.8K papers, 2.2M citations
91% related
Thin film
275.5K papers, 4.5M citations
90% related
Silicon
196K papers, 3M citations
89% related
Amorphous solid
117K papers, 2.2M citations
85% related
Raman spectroscopy
122.6K papers, 2.8M citations
82% related
Performance
Metrics
No. of papers in the topic in previous years
YearPapers
202336
202267
202178
202085
201980
201882