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Band offset

About: Band offset is a research topic. Over the lifetime, 2446 publications have been published within this topic receiving 53450 citations.


Papers
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Journal ArticleDOI
TL;DR: In this article, β-gallium oxide (Ga2O3) films were deposited on Si (100) substrate using pulsed laser deposition (PLD) technique in order to observe the crystallinity variation due to the annealing.

63 citations

Journal ArticleDOI
TL;DR: In this article, the minimum thickness of SiO 2 on Si substrate at which a proper barrier height between Si 2 and Si holds was evaluated by studying the band offset between SiO and Si as a function of Si 2 thickness.

62 citations

Journal ArticleDOI
TL;DR: In this paper, it was shown that the capacitance-voltage profiling technique to obtain heterojunction band offsets is grading independent, that is, the band offset values obtained by it are the values for the limit of zero compositional grading, even in nonabrupt junctions.
Abstract: It is shown that the capacitance‐voltage (C‐V) profiling technique to obtain heterojunction (HJ) band offsets is grading independent, that is, the band offset values obtained by it are the values for the limit of zero compositional grading, even in nonabrupt junctions. The result explains the good agreement of old data taken on nonabrupt HJ’s grown by liquid phase epitaxy (LPE) with more recent data on abrupt junctions. It suggests that LPE grown HJ’s may be used more freely than was previously thought to determine those offsets, making C‐V profiling the most versatile technique for the determination of HJ band offsets.

62 citations

Journal ArticleDOI
TL;DR: The carrier mobility is not found to be affected by the band offset between ZnTe nanostructures and PbTe, and this is explained by the quantum tunneling of the charge carrier through the narrow offset barrier and depletion width and coherent nature of the interface boundary between the two phases.
Abstract: Motivated by the theoretically predicted Zn resonant states in the conduction band of PbTe, in the present work, we investigated the effect of Zn substitution on the thermoelectric properties in I-doped n-type PbTe. The room temperature thermopower values show good agreement with the theoretical Pisarenko plot of PbTe up to a carrier concentration of 4.17 × 1019 cm–3; thus, the presence of Zn resonance levels is not observed. Because of the low solubility of Zn in PbTe, a second phase of coherent ZnTe nanostructures is observed within the PbTe host matrix, which is found to reduce the lattice thermal conductivity. The reduced lattice thermal conductivity in PbTe by ZnTe nanostructures leads to notable enhancement in the figure of merit with a maximum value of 1.35 at 650 K. In contrast to the recent literature, the carrier mobility is not found to be affected by the band offset between ZnTe nanostructures and PbTe. This is explained by the quantum tunneling of the charge carrier through the narrow offset ...

62 citations

Journal ArticleDOI
TL;DR: In this paper, the acceptor energy as a reference was used to extrapolate the valence band offsets ΔE V (CuInSe 2 /CuInS 2 ) = -0.23 eV and Δ E V (cuInSe2 /CuGaSe 2 )= 0.036 eV.

62 citations


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Performance
Metrics
No. of papers in the topic in previous years
YearPapers
202336
202267
202178
202085
201980
201882