Topic
Band offset
About: Band offset is a research topic. Over the lifetime, 2446 publications have been published within this topic receiving 53450 citations.
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TL;DR: The band alignment of atomic layer deposited (HfZrO4)1−x(SiO2)x (x = 0, 0.10, 0., 0.15, and 0.20) gate dielectric thin films grown on Si (100) was obtained by using X-ray photoelectron spectroscopy and reflection electron energy loss spectrographs as discussed by the authors.
Abstract: The band alignment of atomic layer deposited (HfZrO4)1−x(SiO2)x (x = 0, 0.10, 0.15, and 0.20) gate dielectric thin films grown on Si (100) was obtained by using X-ray photoelectron spectroscopy and reflection electron energy loss spectroscopy. The band gap, valence band offset, and conduction band offset values for HfZrO4 silicate increased from 5.4 eV to 5.8 eV, from 2.5 eV to 2.75 eV, and from 1.78 eV to 1.93 eV, respectively, as the mole fraction (x) of SiO2 increased from 0.1 to 0.2. This increase in the conduction band and valence band offsets, as a function of increasing SiO2 mole fraction, decreased the gate leakage current density. As a result, HfZrO4 silicate thin films were found to be better for advanced gate stack applications because they had adequate band gaps to ensure sufficient conduction band offsets and valence band offsets to Si.
58 citations
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TL;DR: In this paper, the energy diagrams of interfaces between (100)Ge and several rare-earth oxide insulators deposited from a molecular beam are determined using a combination of internal photoemission and photoconductivity measurements.
Abstract: Energy diagrams of interfaces between (100)Ge and several rare-earth oxide insulators deposited from a molecular beam are determined using a combination of internal photoemission and photoconductivity measurements. For the wide band gap (5.9eV) oxides Gd2O3 and LaHfOx, the band alignment at the interface is found to be close to that of HfO2 and is characterized by conduction/valence band offsets of ∼2∕∼3eV. In contrast, CeO2 which has a much narrower band gap (3.3eV) does not provide a band alignment diagram corresponding to sufficient insulation.
57 citations
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TL;DR: The effect of nitrogen incorporation on the electronic structure and thermal stability of HfO2 gate dielectric was investigated by using photoemission study and first-principles calculation as mentioned in this paper.
Abstract: The effect of nitrogen incorporation on the electronic structure and thermal stability of HfO2 gate dielectric was investigated by using photoemission study and first-principles calculation. Hafnium oxynitride (HfON) dielectric shows higher thermal stability in comparison to pure HfO2 on Si. Atomic N can passivate O vacancies in the dielectrics during nitridation process, but the N atoms incorporated into interstitial sites cause band gap reduction. Postnitridation annealing is required to activate interstitial N atoms to form stable N–Hf bonds, which will increase the band gap and band offset of as-nitrided dielectric film.
57 citations
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TL;DR: The ability to create a new class ofexcitons in hetero- and homobilayers that combines advantages of monolayer and interlayer excitons, i.e., featuring both large optical and electric dipoles is demonstrated.
Abstract: Excitons in monolayer semiconductors have a large optical transition dipole for strong coupling with light. Interlayer excitons in heterobilayers feature a large electric dipole that enables strong coupling with an electric field and exciton-exciton interaction at the cost of a small optical dipole. We demonstrate the ability to create a new class of excitons in hetero- and homobilayers that combines advantages of monolayer and interlayer excitons, i.e., featuring both large optical and electric dipoles. These excitons consist of an electron confined in an individual layer, and a hole extended in both layers, where the carrier-species-dependent layer hybridization can be controlled through rotational, translational, band offset, and valley-spin degrees of freedom. We observe different species of layer-hybridized valley excitons, which can be used for realizing strongly interacting polaritonic gases and optical quantum controls of bidirectional interlayer carrier transfer.
57 citations
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TL;DR: In this paper, the authors analyzed the piezoelectric properties of Ga 12xInxN/GaN multiple quantum well structures in two sets of samples covering the composition range of 0,x,0.2 and well widths 23 Å
Abstract: The piezoelectric properties of Ga 12xInxN/GaN multiple quantum well structures are analyzed in two sets of samples covering the composition range of 0 ,x,0.2 and well widths 23 Å
57 citations