Topic
Band offset
About: Band offset is a research topic. Over the lifetime, 2446 publications have been published within this topic receiving 53450 citations.
Papers published on a yearly basis
Papers
More filters
••
TL;DR: In this article, the authors measured the valence band offset at the interface between CdS and Cu2ZnSnS4 using hard X-ray photoelectron spectroscopy (HAXPES).
Abstract: We directly and non-destructively measured the valence band offset at the interface between CdS and Cu2ZnSnS4 (CZTS) using hard X-ray photoelectron spectroscopy (HAXPES), which can measure the electron state of the buried interface because of its large analysis depth. These measurements were made using the following real devices; CZTS(t = 700 nm), CdS(t = 100 nm)/CZTS(t = 700 nm), and CdS(t = 5 nm)/CZTS(t = 700 nm) films formed on Mo coated glass. The valence band spectra were measured by HAXPES using an X-ray photon energy of 8 keV. The value of the valence band offset at the interface between CdS and CZTS was estimated as 1.0 eV by fitting the spectra. The conduction band offset could be deduced as 0.0 eV from the obtained valence band offset and the band gap energies of CdS and CZTS.
52 citations
••
TL;DR: In this article, the dc drain current characteristics of AlGaN/GaN high electron mobility transistors (HEMTs) at high temperatures have been studied by numerical simulation from the self-consistent solution of Schrodinger's and Poisson's equations.
Abstract: The dc drain current characteristics of AlGaN/GaN high electron mobility transistors (HEMTs) at high temperatures have been studied by numerical simulation from the self-consistent solution of Schrodinger's and Poisson's equations. The effects of temperature on the polarization and conduction band offset in the heterojunction have been considered. Our simulation results of the drain current at high temperature agree very well with reported experimental data. There is a significant reduction of saturation drain current when the temperature increases, and it is concluded that this is caused by both the decrease of saturation carrier velocity and two-dimensional electron density in the HEMT.
52 citations
••
TL;DR: In this article, the conduction band offset of the coherently strained GaAs{sub 1-y}Sb{sub y}/GaAs heterojunction grown on GaAs has a zero crossing at a Sb mole fraction of y=0.07.
Abstract: Measurements of the transition energies of GaAsSb quantum well samples with different barrier configurations reveal that the conduction band offset of the coherently strained GaAs{sub 1-y}Sb{sub y}/GaAs heterojunction grown on GaAs has a zero crossing at a Sb mole fraction of y=0.43{+-}0.07. A type-I band alignment is formed for lower Sb mole fractions and a type-II band alignment is formed for higher Sb mole fractions. This occurs as a consequence of a considerable amount (58%) of the -1.58 eV bandgap bowing being distributed to the conduction band. As a suitable active material for 1.3 {mu}m emission, pseudomorphic GaAs{sub 0.643}Sb{sub 0.357} grown on GaAs is determined to have a weak, 23{+-}23 meV, type-I conduction band offset and a bandgap energy of 928{+-}4 meV.
52 citations
••
TL;DR: In this article, an estimation for the band offsets and the fundamental band gap was presented for Si1−x−yGexCy alloys tensile or compressive strained on Si(001).
Abstract: An estimation for the band offsets and the fundamental band gap will be presented for Si1−x−yGexCy alloys tensile or compressive strained on Si(001). This estimation considers both the band lineup at the interface of two different materials as well as the strain effects. Unknown material parameters have been adjusted to obtain the best agreement with experimental results for tensile strained Si1−yCy layers. The obtained results agree very well with the first experimental data for the effect of C on band-structure properties in Si1−x−yGexCy. For a completely strain-compensated (cubic) Si1−x−yGexCy layer, we predict significant “Ge effects” (smaller gap than Si, valence-band offset to Si) with values depending on the Ge content.
51 citations
••
TL;DR: In this paper, the photoreflectance spectra of a strained layer (001) In0.21Ga0.79As/GaAs single quantum as well as a function of temperature in the range 10 K
Abstract: We have measured the photoreflectance spectra of a strained layer (001) In0.21Ga0.79As/GaAs single quantum well as a function of temperature in the range 10 K
51 citations