Topic
Band offset
About: Band offset is a research topic. Over the lifetime, 2446 publications have been published within this topic receiving 53450 citations.
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TL;DR: In this paper, the authors used capacitance-voltage (C-V) characteristics to investigate double heterojunction strained Si/SiGe MOS capacitors, which represented a fast and non-destructive method to determine important characteristics such as layer thicknesses, threshold voltages and band offsets.
Abstract: Capacitance–voltage (C–V) characteristics are used to investigate double heterojunction strained Si/SiGe MOS capacitors. Structures of this type potentially form the channels of CMOS devices based on the strained Si/SiGe material system. The technique represents a fast and non-destructive method to determine important characteristics such as layer thicknesses, threshold voltages and band offsets. Moreover, it contributes to the design of optimum heterostructures for CMOS. Experimental C–V data are compared with simulation and complementary results including SIMS and TEM to confirm the accuracy of the technique.
35 citations
TL;DR: In this paper, the authors measured the valence band offset between 4H-, 6H-SiC, and grown-on thermal oxide using internal photoemission of holes and obtained value ΔEV=2.9±0.1
Abstract: The valence band offset between 4H-, 6H-SiC, and grown-on thermal oxide is directly measured using internal photoemission of holes. The obtained value ΔEV=2.9±0.1 eV in combination with the earlier reported barrier for valence electrons yields an oxide band gap width of 8.9 eV, close to the intrinsic value for amorphous SiO2 which suggests an abrupt SiC/SiO2 interface. Hole tunneling from SiC into SiO2 is mediated by oxide defect states distributed in an energy range of ∼1 eV above the SiO2 valence band.
35 citations
TL;DR: In this article, the authors investigated carrier and phonon transports related to thermoelectric properties using absolutely-controlled Si nanostructures, namely Si films containing epitaxial nanodots (NDs).
35 citations
TL;DR: In this paper, Li et al. measured low temperature optical transmission spectra (TS) and room temperature photoreflectance (PR) spectra to investigate several In x Ga 1− x AS GaAs strained multiple quantum wells (MQWs) grown by molecular beam epitaxy (MBE).
35 citations
TL;DR: In this paper, the interfacial energy band diagram configuration of the Al2O3/O-diamond was established based on X-ray photoelectron spectroscopy.
Abstract: Diamond metal-oxide-semiconductor capacitors were prepared using atomic layer deposition at 250 °C of Al2O3 on oxygen-terminated boron doped (001) diamond. Their electrical properties were investigated in terms of capacitance and current versus voltage measurements. Performing X-ray photoelectron spectroscopy based on the measured core level energies and valence band maxima, the interfacial energy band diagram configuration of the Al2O3/O-diamond is established. The band diagram alignment is concluded to be of type I with valence band offset ΔEv of 1.34 ± 0.2 eV and conduction band offset ΔEc of 0.56 ± 0.2 eV considering an Al2O3 energy band gap of 7.4 eV. The agreement with electrical measurement and the ability to perform a MOS transistor are discussed.
35 citations