Topic
Band offset
About: Band offset is a research topic. Over the lifetime, 2446 publications have been published within this topic receiving 53450 citations.
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TL;DR: In this article, the authors have fabricated and analyzed a Si0.6Ge0.4 gated diodes that exhibit significantly enhanced gate-controlled tunneling current over that of coprocessed silicon control devices, which is consistent with device operation based on quantum-mechanical band-to-band tunneling rather than on thermal generation.
Abstract: Strained silicon-germanium (Si0.6Ge0.4) gated diodes have been fabricated and analyzed. The devices exhibit significantly enhanced gate-controlled tunneling current over that of coprocessed silicon control devices. The current characteristics are insensitive to measurement temperature in the 80 K to 300 K range. Independently extracted valence band offset at the strained Si0.6Ge0.4/Si interface is 0.4 eV, yielding a Si0.6Ge0.4 bandgap of 0.7 eV, which is much reduced compared to that of Si. The results are consistent with device operation based on quantum-mechanical band-to-band (BTB) tunneling rather than on thermal generation. Moreover, simulation of the strained Si0.6Ge0.4 device using a quantum-mechanical BTB tunneling model is in good agreement with the measurements.
33 citations
TL;DR: In this paper, magneto-photoluminescence experiments on CdTe⧸Cd 1− x Mn x Te superlattices are reported, which allow the observation of the type-I → type-II transition induced by the giant Zeeman effect of the semimagnetic barrier.
33 citations
TL;DR: In this article, the authors measured the energy discontinuity in the valence band of amorphous InGaZnO4 (a-IGZO)/ZrO2 heterostructure deposited by DC and RF sputtering at room temperature, respectively.
Abstract: X-ray photoelectron spectroscopy was used to measure the energy discontinuity in the valence band (△EV) of amorphous InGaZnO4 (a-IGZO)/ZrO2 heterostructure deposited by DC and RF sputtering at room temperature, respectively. A value of △EV = 0 eV was obtained by using the Ga and Zn 2p3 and In 3d3 energy levels as references. Given the experimental band gap of 3.1 eV and 5.8 eV for the a-IGZO and ZrO2, respectively, this would indicate a conduction band offset of 2.7 eV in the system.
33 citations
TL;DR: In this paper, the authors demonstrate that the effective band discontinuity at an n-isotype heterojunction interface can be significantly modified by introducing p-type δ doping close to the interface during molecular beam epitaxy growth.
Abstract: We demonstrate that the effective band discontinuity at an n‐isotype heterojunction interface can be significantly modified by introducing p‐type δ doping close to the interface during molecular beam epitaxy growth. This is shown for the case of the relaxed InAs‐GaAs interface where the band discontinuities with and without δ doping have been measured by the I‐V technique coupled with appropriate numerical modeling of the interface.
32 citations
TL;DR: In this paper, the authors report a very careful, self-consistent, relativistic pseudopotential calculation of the interfacial dipole double-layer potential, valence-band offset, and formation enthalpy.
Abstract: We report a very careful, self-consistent, relativistic pseudopotential calculation of the interfacial dipole double-layer potential, valence-band offset, and formation enthalpy of (GaAs${)}_{3}$(AlAs${)}_{3}$(110). A comparison is made with identical calculations for the (001) superlattice with the following results [(001) in parentheses]: The interfacial dipole layer is 315 (154) meV. The formation enthalpy per twelve-atom unit cell is -21.9 (+1.7) meV. The valence-band offset is 447 (446) meV. This lends credence to the idea that the band offset is a difference of bulk quantities and that vastly different interfaces set up whatever double layer is necessary to maintain that difference.
32 citations