Topic
Band offset
About: Band offset is a research topic. Over the lifetime, 2446 publications have been published within this topic receiving 53450 citations.
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TL;DR: An extremely small, in-plane effective-mass hole ground state was observed, thus proving that the hole quantum well is located in the biaxially compressed, InSb layer.
Abstract: Long-wavelength magnetotransmission and photoluminescence measurements were performed on InAs{sub 0.13}Sb{sub 0.87}/InSb strained-layer superlattices (SLS's). The energies and reduced effective masses of several interband optical transitions were obtained from these experiments. SLS's with different layer thicknesses produced self-consistent results. With these data, the type-II band offset and band-edge strain-shift parameters were accurately determined. Consistent with a type-II offset, an extremely small, in-plane effective-mass hole ground state was observed, thus proving that the hole quantum well is located in the biaxially compressed, InSb layer. Nonparabolicity, suggesting valence-band anticrossing, was also observed.
32 citations
TL;DR: In this paper, it was shown that the width of the band gap at the mean value point equals the dielectric band gap and that the empirical tight-binding approximation reproduces the dispersion of the GW valence bands from the middle to the mean-value point of the Brillouin zone.
32 citations
TL;DR: A self-consistent pseudopotential calculation of the valence-band offset at the GaAs/InAs (001) strained interface is presented, chosen as an example of isovalent, common-anion, lattice-mismatched heterojunctions.
Abstract: We present a self-consistent pseudopotential calculation of the valence-band offset at the GaAs/InAs (001) strained interface which is chosen as an example of isovalent, common-anion, lattice-mismatched heterojunctions. Our results show that the valence-band offset can be tuned by about 0.5 eV going from GaAs to InAs substrates, mainly due to the different effect of strain on the topmost valence-band state of the two bulk materials.
31 citations
31 citations
TL;DR: In this article, the authors investigate perovskite planar heterojunction solar cells using 2D physics-based TCAD simulation and show that in order to achieve high efficiency, the mobility of the hole transport layer should exceed 10-4cm2/V s.
Abstract: In this paper, we investigate perovskite planar heterojunction solar cells using 2D physics-based TCAD simulation. The perovskite cell is modeled as an inorganic material with physics-based parameters. A planar structure consisting of $$\hbox {TiO}_{2}$$TiO2 as the electron transport material (ETM), $$\hbox {CH}_{3}\hbox {NH}_{3}\hbox {PbI}_3{}_{-\mathrm{x}}\hbox {Cl}_\mathrm{x}$$CH3NH3PbI3-xClx as the absorber layer, and Spiro-OmeTAD as the hole transport material (HTM) is simulated. The simulated results match published experimental results indicating the accuracy of the physics-based model. Using this model, the effect of the hole mobility and electron affinity/band gap of the hole transport layer (HTM) is investigated. The results show that in order to achieve high efficiency, the mobility of the HTM layer should exceed $$10^{-4}\hbox {cm}^{2}/\hbox {V s}$$10-4cm2/V s. In addition, reducing the band offset to match the valance band of the perovskite results in achieving the highest efficiency. Moreover, the results are discussed in terms of charge transport in the HTM layer and the band alignment at the HTM/perovskite interface.
31 citations