Topic
Band offset
About: Band offset is a research topic. Over the lifetime, 2446 publications have been published within this topic receiving 53450 citations.
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TL;DR: In this paper, the surface of clean substrate and the Ga2O3/GaN interface were characterized in situ by X-ray photoelectron spectroscopy (XPS), ultraviolet photo electromagnetic resonance (UPS), and low-energy electron diffraction (LEED).
31 citations
TL;DR: In this article, compositional information is obtained from energy dispersive x-ray spectroscopy and the band gap is determined as a function of Al content, obtaining Eg(y)=0.81+0.036y+2.3y2 eV at 2 K.
Abstract: In1−x−yGaxAlyAs is grown lattice matched by low pressure metalorganic chemical vapor deposition on InP and characterized using low temperature photoluminescence. Compositional information is obtained from energy dispersive x‐ray spectroscopy and the band gap is determined as a function of Al content. We obtain Eg(y)=0.81+0.036y+2.96y2 eV at 2 K. For Al compositions larger than 22% a type II staggered band lineup is observed. At this point the conduction band discontinuity disappears (ΔEc=0). The conduction band discontinuity as a function of the Al composition is ΔEc(y)=0.245−1.179y+0.3y2 eV.
31 citations
TL;DR: In this paper, the authors investigated temperature-dependent interfacial chemical bonding states and band alignment of HfOxNy ∕SiO2∕Si gate stacks by means of X-ray photoemission spectroscopy (XPS) and spectroscopic ellipsometry (SE).
Abstract: Temperature-dependent interfacial chemical bonding states and band alignment of HfOxNy∕SiO2∕Si gate stacks have been investigated by X-ray photoemission spectroscopy (XPS) and spectroscopic ellipsometry (SE). By means of the chemical shifts of Hf 4f, Si 2p, O 1s, and N 1s core-level spectra, it has been found that the chemical stability of the HfOxNy∕SiO2∕Si stacks strongly depends on the annealing temperature. Analysis of temperature-dependent band alignment of HfOxNy∕SiO2∕Si stacks suggests that the valence band offset ΔEv increases slowly from 1.82eV for as-grown film to 2.55eV for annealed film at 700°C; however, the values of conduction band offset ΔEc only demonstrates a slight change in the vicinity of 1.50eV. From the band offset viewpoint, HfOxNy∕SiO2∕Si gate stack could be a promising candidate for high-k gate dielectrics.
31 citations
31 citations
TL;DR: In this article, the authors used x-ray photoelectron spectroscopy to determine the valence band offset (VBO) of a Cu2O/In2O3 heterojunction.
Abstract: In2O3 is a promising partner of Cu2O to form a Cu2O/In2O3 heterojunction system. We used x-ray photoelectron spectroscopy to determine the valence band offset (VBO) of a Cu2O/In2O3 heterojunction. The valence band offset is found to be 1.43 ± 0.2 eV. Given the experimental bandgaps of 2.0 eV and 2.6 eV for Cu2O and In2O3, respectively, we calculate the band alignment of a Cu2O/In2O3 heterojunction with a conduction band offset (CBO) of 0.83 ± 0.2 eV. To apply Cu2O/In2O3 bilayers in electronic devices, it is important to determine the band alignment accurately based on the VBO and CBO.
31 citations