Topic
Band offset
About: Band offset is a research topic. Over the lifetime, 2446 publications have been published within this topic receiving 53450 citations.
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TL;DR: In this article, strong luminescence efficiency in the blue was observed with spectra showing only weak alloy disorder effects, and a measurement for the band offsets in a model which properly included exciton effects was obtained.
Abstract: Optical characteristics of a new, weakly strained wide‐gap II‐VI quantum well have been studied with emphasis on the confined exciton states Strong luminescence efficiency in the blue is observed with spectra showing only weak alloy disorder effects Magneto‐optical studies yield a measurement for the band offsets in a model which properly includes exciton effects
30 citations
TL;DR: In this paper, a three-step method was proposed to accurately predict the natural band offset between different semiconductors, which can be easily applied to system with larger lattice mismatch and to systems with lower symmetry.
Abstract: Band offsets between different semiconductors are important parameters that determine the electronic transport properties near the interface in the heterostructure devices. The computation of the natural band offset is a well-known challenge. In this paper, we propose a new method, which is called the three-step method, to accurately predict the natural band offset. Compared to previous methods, the present method is more direct and can be easily applied to systems with larger lattice mismatch and to systems with lower symmetry. Using the present method, we successfully calculate the natural band offset between the inorganic halide perovskites $AB{X}_{3}\phantom{\rule{0.28em}{0ex}}(A=\mathrm{Cs};\phantom{\rule{0.28em}{0ex}}B=\mathrm{Sn},\phantom{\rule{0.28em}{0ex}}\mathrm{Pb};\phantom{\rule{0.28em}{0ex}}X=\mathrm{Cl},\phantom{\rule{0.28em}{0ex}}\mathrm{B},\phantom{\rule{0.28em}{0ex}}\mathrm{I})$ in the cubic and orthorhombic phase. We show that the valence band maximum shifts down as the atomic number of the $X$ site ion increases, while the valence band maximum shifts up as $B$ site ion varies from Sn to Pb or as the compound transforms from the cubic phase to the orthorhombic phase. It is found that the band gap differences between these compounds can be attributed primarily to the valence band offsets, with a much smaller contribution from the conduction band offsets.
30 citations
TL;DR: In this paper, band-edge shifts induced by the electron-phonon interaction are calculated for HgCdTe alloys and various semiconductor compounds starting from accurate zero-temperature band structures.
Abstract: Band-edge shifts induced by the electron-phonon interaction are calculated for HgCdTe alloys and various semiconductor compounds starting from accurate zero-temperature band structures. The calculated temperature variation of gaps agrees with experiments to better than 10% in all materials except InAs and InSb where the deviation is about 50%. While the simple picture that the intra (inter)-band transitions reduce (increase) the gap still holds, we show that both the conduction band edge Ec and valence band edge Ev move down in energy. These shifts in Ev affect the valence band offsets in heterojunctions at finite temperature. The temperature variations of valence band offset and the electron effective mass are also reported.
30 citations
TL;DR: In this paper, a broadening of core-level X-ray photoelectron spectra was observed for thin-film heterojunctions, driven primarily by chemical shifts associated with surface hydroxylation, with built-in potentials playing only minor role.
Abstract: Chemical effects at the surface and interface can broaden core-level spectra in X-ray photoemission for thin-film heterojunctions, as can electronic charge redistributions. We explore these effects and their influence on the measurement of valence and conduction band offsets at the epitaxial SrTiO3(001)/p-Ge(001) heterojunction. We observe a clear broadening in Ge 3d and Sr 3d core-level X-ray photoelectron spectra relative to those of clean, bulk Ge(001), and homoepitaxial SrTiO3(001), respectively. Angle-resolved measurements indicate that this broadening is driven primarily by chemical shifts associated with surface hydroxylation, with built-in potentials playing only a minor role. The impact of these two interpretations on the valence band offset is significant on the scale of transport energetics, amounting to a difference of 0.2 eV.
30 citations
TL;DR: In this article, the authors used Kroemers analysis to measure the apparent carrier concentration profiles in Si/Si 1−xGex/Si structures for a range of Ge percentages.
Abstract: Capacitance‐voltage (C‐V) profiling has been used to measure the apparent carrier concentration profiles in Si/Si1−xGex/Si structures for a range of Ge percentages. Using Kroemers analysis, good agreement has been found between theoretical valence band offsets and those determined from the experimental data. The validity of Kroemers analysis has been assessed in the presence of traps using a C‐V simulation program. Under certain circumstances, large errors occur in the extracted valence band offset due to distortion of the apparent carrier concentration profile by traps. It is proposed that the experimental data presented here falls into a regime where minimal distortion is to be expected and is reflected by the accuracy of the extracted valence band offsets.
30 citations