Topic
Band offset
About: Band offset is a research topic. Over the lifetime, 2446 publications have been published within this topic receiving 53450 citations.
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29 citations
TL;DR: The three chemical bonding effects at Si-dielectric interfaces that are important in substituting alternative gate dielectric materials for SiO 2 in aggressively scaled CMOS are (i) the character of the interface bonds, either isovalent with bond and nuclear charge balanced as in Si-SiO 2, or heterovalent, where there is an inherent mismatch between bond and charge.
29 citations
TL;DR: In this paper, the authors determined the energy band alignment of SiO2/ZnO interface by x-ray photoelectron spectroscopy, and the conduction band offset was determined to be 0.93 +/- 0.15 eV.
Abstract: Thin SiO2 interlayer is the key to improving the electroluminescence characteristics of light emitting diodes based on ZnO heterojunctions, but little is known of the band offsets of SiO2/ZnO. In this letter, energy band alignment of SiO2/ZnO interface was determined by x-ray photoelectron spectroscopy. The valence band offset Delta E-V of SiO2/ZnO interface is determined to be 0.93 +/- 0.15 eV. According to the relationship between the conduction band offset Delta E-C and the valence band offset Delta E-V Delta E-C=E-g(SiO2)-E-g(ZnO)-Delta E-V, and taking the room-temperature band-gaps of 9.0 and 3.37 eV for SiO2 and ZnO, respectively, a type-I band-energy alignment of SiO2/ZnO interface with a conduction band offset of 4.70 +/- 0.15 eV is found. The accurate determination of energy band alignment of SiO2/ZnO is helpful for designing of SiO2/ZnO hybrid devices and is also important for understanding their carrier transport properties. (C) 2009 American Institute of Physics. [DOI 10.1063/1.3204028]
29 citations
TL;DR: In this article, the authors investigated the interface energy barriers induced on (001) silicon by La2Hf2O7, whose growth has been recently attained by molecular-beam epitaxy.
Abstract: In the perspective of exploring alternative gate dielectrics for the future generation of microelectronic devices, we investigated experimentally and theoretically the interface energy barriers induced on (001) silicon by La2Hf2O7, whose growth has been recently attained by molecular-beam epitaxy. Experimental results show that the 5.6±0.1eV band gap of La2Hf2O7 is aligned to the band gap of silicon with a valence band offset of 2.4±0.1eV and a conduction band offset of 2.1±0.1eV. Density functional theory calculations yield valence band offset values ranging between 1.8 and 2.4eV.
29 citations
TL;DR: X-ray photoelectron spectroscopy has been used to measure the valence band offset of the InN/BaTiO3 heterojunction and it is found that a type-I band alignment forms at the interface.
Abstract: X-ray photoelectron spectroscopy has been used to measure the valence band offset of the InN/BaTiO3 heterojunction. It is found that a type-I band alignment forms at the interface. The valence band offset (VBO) and conduction band offset (CBO) are determined to be 2.25 ± 0.09 and 0.15 ± 0.09 eV, respectively. The experimental VBO data is well consistent with the value that comes from transitivity rule. The accurate determination of VBO and CBO is important for use of semiconductor/ferrroelectric heterojunction multifunctional devices.
29 citations