Topic
Band offset
About: Band offset is a research topic. Over the lifetime, 2446 publications have been published within this topic receiving 53450 citations.
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TL;DR: In this paper, the authors used heterostructure bipolar transistors to experimentally determine band offsets in lattice-matched In0.53Ga0.47As and Al0.48In0.52As/Al0.5As devices.
Abstract: Heterostructure bipolar transistors are used to experimentally determine band offsets in lattice‐matched In0.53Ga0.47As devices. Valence‐band offsets of ΔEV=0.24 eV for Al0.48In0.52As/In0.53Ga0.47As and ΔEV=0.34 eV for InP/In0.53Ga0.47As are measured. Because of band filling in the base, these values place important constraints on p‐type doping levels and emitter injection efficiency in practical devices.
28 citations
TL;DR: In this paper, a double heterojunction bipolar transistor (DHBT)-based capacitorless one-transistor (1T) DRAM cell employing a narrow bandgap SiGe body and Si/SiGe Heterojunction for a possible next-generation DRAM cells was proposed.
Abstract: We propose a novel double heterojunction bipolar transistor (DHBT)-based capacitorless one-transistor (1T) DRAM cell employing a narrow bandgap SiGe body and Si/SiGe heterojunction for a possible next-generation DRAM cell. It has a body with a narrow bandgap and a valence band offset between the source/drain and the body. Through an extended investigation via TCAD simulation, we verified the advantages of the proposed DHBT-based 1T DRAM cell, including an improved excess carrier generation rate, a high current gain, a large sensing margin, and a suppressed sensitivity to the bandgap-narrowing effect in the heavily doped source and drain.
28 citations
TL;DR: In this paper, the effect of conduction band offset (CBO), VBO and interface defect density (Nt) on the performance of perovskite solar cells (PSCs) for spiro-MeOTAD as organic HTM and its detailed comparison is made with Cu-based inorganic HTMs to get better insight about the best inorganic HPM.
28 citations
TL;DR: In this paper, high performance floating-gate memory devices of Si nanocrystal (NC) dots on HfO2 gate oxide were fabricated at temperatures below 400°C and a large counterclockwise hysteresis of 5.2V at an applied voltage of +6V, and a stored charge density of 6×1012cm−2 were observed.
Abstract: High-performance floating gate memory devices of Si nanocrystal (NC) dots on HfO2 gate oxide were fabricated at temperatures below 400°C. A large counterclockwise hysteresis of 5.2V, at an applied voltage of +6V, and a stored charge density of 6×1012cm−2 were observed. Moreover, the smaller band offset of the high-κ tunneling layer resulted in higher charge tunneling probabilities towards the Si NC dots than those observed with a SiO2 tunneling layer. Advantages in terms of scaling for a high-performance and stable reliability memory device are confirmed.
28 citations
TL;DR: In this paper, the authors demonstrate that bicolor emission can be obtained from 2D Colloidal 2D NPLs with a core/crown geometry, using CdSe1-xTex alloys crowned with the right composition and lateral extension.
Abstract: Colloidal 2D nanoplatelets (NPLs) are a class of nanoparticles that offer the possibility of forming two types of heterostructures, by growing either in the confined direction or perpendicular to the confined direction, called core/crown NPLs. Here, we demonstrate that bicolor emission can be obtained from 2D NPLs with a core/crown geometry. To date, for CdSe/CdTe NPLs with type-II band alignment, only charge transfer emission has been observed due to the very fast (
28 citations