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Bandgap voltage reference

About: Bandgap voltage reference is a research topic. Over the lifetime, 5199 publications have been published within this topic receiving 58321 citations.


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01 Jan 1987
TL;DR: In this article, the authors present a simple MOS LARGE-SIGNAL MODEL (SPICE Level 1) and a small-signal model for the MOS TRANSISTOR.
Abstract: 1.1 ANALOG INTEGRATED CIRCUIT DESIGN 1.2 NOTATION, SYMBOLOGY AND TERMINOLOGY 1.3 ANALOG SIGNAL PROCESSING 1.4 EXAMPLE OF ANALOG VLSI MIXED-SIGNAL CIRCUIT DESIGN 2.1 BASIC MOS SEMICONDUCTOR FABRICATION PROCESSES 2.2 THE PN JUNCTION 2.3 THE MOS TRANSISTOR 2.4 PASSIVE COMPONENTS 2.5 OTHER CONSIDERATIONS OF CMOS TECHNOLOGY 3.1 SIMPLE MOS LARGE-SIGNAL MODEL (SPICE LEVEL 1) 3.2 OTHER MOS LARGE-SIGNAL MODEL PARAMETERS 3.3 SMALL-SIGNAL MODEL FOR THE MOS TRANSISTOR 3.4 COMPUTER SIMULATION MODELS 3.5 SUBTHRESHOLD MOS MODEL 3.6 SPICE SIMULATION OF MOS CIRCUITS 4.1 MOS SWITCH 4.2 MOS DIODE/ACTIVE RESISTOR 4.3 CURRENT SINKS AND SOURCES 4.4 CURRENT MIRRORS 4.5 CURRENT AND VOLTAGE REFERENCES 4.6 BANDGAP REFERENCE 5.1 INVERTERS 5.2 DIFFERENTIAL AMPLIFIERS 5.3 CASCODE AMPLIFIERS 5.4* CURRENT AMPLIFIERS 5.5* OUTPUT AMPLIFIERS/BUFFERS 6.1 DESIGN OF CMOS OP AMPS 6.2 COMPENSATION OF OP AMP 6.3 DESIGN OF TWO-STAGE OP AMPS 6.4 POWER-SUPPLY REJECTION RATIO OF TWO-STAGE OP AMPS 6.5 CASCODE OP AMPS 6.6 SIMULATION AND MEASUREMENT OF OP AMPS 6.7 MACROMODELS FOR OP AMPS 7.1 BUFFERED OP AMPS 7.2 HIGH-SPEED/FREQUENCY OP AMPS 7.3 DIFFERENTIAL-OUTPUT OP AMPS 7.4 MICROPOWER OP AMPS 7.5 LOW NOISE OP AMPS 7.6 LOW VOLTAGE OP AMPS 8.1 CHARACTERIZATION OF A COMPARATOR 8.2 TWO-STAGE, OPEN-LOOP COMPARATOR DESIGN 8.3 OTHER OPEN-LOOP COMPARATORS 8.4 IMPROVING THE PERFORMANCE OF OPEN-LOOP COMPARATORS 8.5 DISCRETE-TIME COMPARATORS 8.6 HIGH-SPEED COMPARATORS APPENDIX A CIRCUIT ANALYSIS FOR ANALOG CIRCUIT DESIGN APPENDIX B INTEGRATED CIRCUIT LAYOUT APPENDIX C CMOS DEVICE CHARACTERIZATION APPENDIX D TIME AND FREQUENCY DOMAIN RELATIONSHIP FOR SECOND-ORDER SYSTEMS

2,741 citations

Journal ArticleDOI
Hironori Banba1, Hitoshi Shiga1, Akira Umezawa1, T. Miyaba1, Toru Tanzawa1, S. Atsumi1, Koji Sakui1 
TL;DR: In this paper, the authors proposed a CMOS bandgap reference (BGR) circuit, which can successfully operate with sub-1-V supply, and measured V/sub ref/ is 518/spl plusmn/15 mV (3/spl sigma/) for 23 samples on the same wafer at 27-125/spl deg/C.
Abstract: This paper proposes a CMOS bandgap reference (BGR) circuit, which can successfully operate with sub-1-V supply, In the conventional BGR circuit, the output voltage V/sub ref/ is the sum of the built-in voltage of the diode V/sub f/ and the thermal voltage V/sub T/ of kT/q multiplied by a constant. Therefore, V/sub ref/ is about 1.25 V, which limits a low supply-voltage operation below 1 V. Conversely, in the proposed BGR circuit, V/sub ref/ has been converted from the sum of two currents; one is proportional to V/sub f/ and the other is proportional to V/sub T/. An experimental BGR circuit, which is simply composed of a CMOS op-amp, diodes, and resistors, has been fabricated in a conventional 0.4-/spl mu/m flash memory process. Measured V/sub ref/ is 518/spl plusmn/15 mV (3/spl sigma/) for 23 samples on the same wafer at 27-125/spl deg/C.

820 citations

Journal ArticleDOI
A. Brokaw1
01 Dec 1974
TL;DR: In this paper, a two-transistor cell in a three-terminal 2.5-V monolithic reference is described, which uses collector current sensing to eliminate errors due to base current.
Abstract: A new configuration for realization of a stabilized bandgap voltage is described. The new two-transistor circuit uses collector current sensing to eliminate errors due to base current. Because the stabilized voltage appears at a high impedance point, the application to circuits with higher output voltage is simplified. Incorporation of the new two-transistor cell in a three-terminal 2.5-V monolithic reference is described. The complete circuit is outlined in functional detail together with analytical methods used in the design. The analytical results include sensitivity coefficients, gain and frequency response parameters, and biasing for optimum temperature performance. The performance of the monolithic circuit, which includes temperature coefficients of 5 ppm//spl deg/C over the military temperature range, is reported.

523 citations

Patent
10 Oct 2008
TL;DR: In this article, a DC power converter and a mode switching method used in an electronic apparatus are described, where the electronic apparatus includes a subsystem circuit, and a DC converter comprises a first voltage converting circuit electrically connected to the subsystem circuit and receiving a system voltage and a first reference voltage.
Abstract: A DC converter and a mode-switching method used in an electronic apparatus are included. The electronic apparatus includes a subsystem circuit. The DC power converter comprises a first voltage converting circuit electrically connected to the subsystem circuit, receiving a system voltage and a first reference voltage, and converting the system voltage to a first output voltage based on the first reference voltage; and a second voltage converting circuit electrically connected to the subsystem circuit and receiving the system voltage and a second reference voltage, and converting the system voltage to a second output voltage to the same output end of the first voltage converting circuit based on the second reference voltage; wherein the second voltage converting circuit outputs the second output voltage to the subsystem circuit when the first output voltage at the output end is smaller than a threshold.

517 citations

Journal ArticleDOI
TL;DR: In this paper, the conditions under which this effect occurs, and stability of this bias point are investigated, and verified experimentally investigating the temperature behavior of a simple voltage reference circuit realized in 0.35 /spl mu/m CMOS process.
Abstract: Mutual compensation of mobility and threshold voltage temperature variations may result in a zero temperature coefficient bias point of a MOS transistor. The conditions under which this effect occurs, and stability of this bias point are investigated. Possible applications of this effect include voltage reference circuits and temperature sensors with linear dependence of voltage versus temperature. The theory is verified experimentally investigating the temperature behavior of a simple voltage reference circuit realized in 0.35 /spl mu/m CMOS process.

504 citations


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Performance
Metrics
No. of papers in the topic in previous years
YearPapers
202332
202272
202145
2020110
2019155
2018172