Showing papers on "Banyan switch published in 2006"

C-type and R-type RF MEMS Switches for Redundancy Switch Matrix Applications

Abstract: The objective of this paper is to investigate novel configurations of planar multi-port RF MEMS C-type and R-type switches as basic building blocks of redundancy switch matrices for satellite communications. An in house monolithic fabrication process dedicated to electrostatic multi-port RF MEMS switches is developed and fine tuned. The proposed C-type switch is a four port device with two operational states. This switch illustrates an insertion loss of less than 0.3dB and isolation of about 25dB at satellite C band frequency range. The novel R-type switch is also a four port device with an additional operational state that could drastically reduce the number of required switch elements (up to 50%) in a redundancy switch matrix. The measured results show an insertion loss of better than 0.4dB and isolation of better than 25dB at C-band. This is the first time that an R-type RF MEMS switch is ever reported.

Network switch having a hybrid switch architecture

Abstract: A network switch having a hybrid switch architecture, which is scalable to increase connectivity, buffering, and bandwidth by using multiple shared-memory switch fabrics and multiple crossbar switch fabrics. Each of the crossbar switch fabrics is coupled to each of the shared-memory switch fabrics. The shared-memory switch fabrics are configured to store and retrieve packets. The crossbar switch fabrics are configured to distribute and recollect packets to and from each of the shared-memory switch fabrics. The network switch having a hybrid switch architecture distributes packets from a crossbar switch fabric to the multiple shared-memory switch fabrics to share the distributed packets among the multiple shared-memory switch fabrics.

Study for performance of thermo-optic matrix switches with flexible switching units and Banyan networks

Abstract: A large-scale optical matrix switch is generally composed of a permutation of switching units connected by a network of optical signal paths. In this work, a configuration of optical matrix switches with flexible switching units and Banyan networks is proposed. With Banyan networks, silica-based waveguides, and two types of switching units, the insertion loss of the optical matrix switch configuration is extensively studied for serial scales from 2×2 to 64×64. Typically for an 8×8 optical matrix switch, the insertion losses are achieved 3.0 dB for a rearrangeably nonblocking configuration with two-state 2×2 switching units, and 4.7 dB for a strictly nonblocking configuration with three-state 2×2 switching units when the intersection angle is designed as 30 deg. Even at the released intersection angle of 20 deg, the insertion losses of 4.0 and 5.8 dB can be achieved for the rearrangeably nonblocking and strictly nonblocking configurations, respectively. In addition, the blocking property and the scalability of the large-scale matrix optical switches with this regime are analyzed.

C-type andR-type RFMEMS Switches forRedundancy Switch Matrix Applications

Abstract: Theobjective ofthis paper istoinvestigate novel configurations ofplanar multi-port RF MEMS C-typeandR- typeswitches as basicbuilding blocks ofredundancy switch matrices forsatellite communications. An inhousemonolithic fabrication processdedicated toelectrostatic multi-port RF MEMS switches is developed and fine tuned. The proposed type switch is a four port device with two operational states. This switch illustrates an insertion loss of less than 0.3dB and isolation of about 25dB at satellite C band frequency range. The novel R- type switch is also a four port device with an additional operational state that could drasticallyreduce the number of required switch elements (up to 50%) in a redundancy switch matrix. The measured results show an insertion loss of better than 0.4dB and isolation of better than 25dB at C-band. This is thefirst time that an R-type RF MEMS switch is ever reported.