Showing papers on "Banyan switch published in 2012"

Silicon Photonic Switches Hybrid-Integrated With CMOS Drivers

Abstract: This paper describes the design and measured performance of three different silicon photonic switches: a 2×2 switch, a 1×2 switch, and a 4×4 switch. All of the devices have been hybrid integrated with a corresponding custom 90-nm CMOS driver. The 2×2 switch is based on a wavelength-insensitive Mach-Zehnder interferometer (WIMZ) and the 1×2 is based on a two-ring resonator. The power dissipation of the 2×2 WIMZ switch was 2 mW from a 1.0-V supply, with measured transition time of 3.9 ns. The 4×4 switch, composed of six 2×2 Mach-Zehnder interferometer (MZI) switches was demonstrated to route 3×40 Gb/s WDM data with BER <; 10-12, with less than -10-dB crosstalk and 7-dB loss.

Analysis of drain current and switching speed for spdt switch and dpdt switch with the proposed dp4t rf cmos switch

Abstract: Conventional CMOS switch uses NMOS as transistors in its main architecture requiring a control voltage of 50 V and a large resistance at the receivers and antennas (ANTs) to detect the signal A CMOS integrated circuit switch uses FET transistors to achieve switching between multiple paths, because of its high value of control voltage Hence it is not suitable for modern portable devices which demand lesser power consumption Therefore, we proposed a new Double-Pole Four-Throw (DP4T) switch by using RF CMOS technology and analyzed its performance Further, main objective is to provide a plurality of such switches arranged in a densely configured switch array, where the power and area could be reduced as compared to already existing switch configuration as SPDT and Double-Pole Double-Throw (DPDT) transceiver switches, which is simply a reduction of signal strength during transmission of the RF signals The presented result for the proposed DP4T switch reveals the peak output currents (drain current) around 0116–0387 mA and a switching speed of 19–36 ps

RF MEMS compact T-type switch design for switch matrix applications in space telecommunication

Abstract: This paper presents a novel approach to monolithically implement a planar multiport radio-frequency (RF) microelectromechanical systems (MEMS) T-type switch. T-type switches are used as building blocks of redundancy switch matrices used in space telecommunication. The T-type switch performs signal routing in three operational states. Two of them are boundary states while the other one is a crossover state. The proposed design uses a series metal contact clamped-clamped beam SPST switches, four port psi junctions and a RF crossover. The simulated results for the entire T-type switch demonstrate an insertion loss of −0.48dB and isolation better than −22.12dB for all states for frequencies up to 25GHz. The use of eight switches instead of twelve makes T-type switch compact. This improves the reliability and compactness of the redundancy switch matrix. The switch gives excellent RF performance near X-band and Ku-band which is the most widely used frequency range for satellite communication.

Design and optimization of RF MEMS T-type switch for redundancy switch matrix applications

Abstract: This paper presents a novel approach to monolithically implement a planar multiport radio-frequency (RF) microelectromechanical systems (MEMS) T-type switch. T-type switches are used as building blocks for redundancy switch matrix applications in space telecommunication. The T-type switch performs signal routing in three operational states. Two of them are turning states while the other one is a crossover state. The proposed design uses a series metal contact clamped-clamped beam SPST switches, four port cross junctions and a RF crossover. The simulated results for the entire T-type switch demonstrates an insertion loss of −0.46dB, return loss of better than −15.50dB and isolation better than −17.73dB for all states for a wideband frequency range 0–30GHz. The switch gives excellent RF performance near X-band and Ku-band which is the most widely used frequency range for satellite communication.

Energy-Aware Switch Design

Abstract: The use of virtualization technology has been increasing in the IT industry to consolidate servers and reduce power consumption significantly. Virtualized commodity servers are scaled out in the data center and increase the demand for bandwidth between servers. Therefore, a high performance switch is required. The shared-memory switch is the best performance/cost switch architecture, but it is challenging to satisfy the requirements on the memory bandwidth in a high speed network. In addition, it is challenging to handle variable-length frames in Ethernet. This chapter describes the main challenges in Ethernet switch designs and then energy-aware switch designs, including switch architecture and high speed IO interface. As implementation examples, this chapter also describes a single-chip switch Large Scale Integration (LSI) embedded with high-speed IO interfaces and 10-Gigabit Ethernet (10GbE) switch blade equipped with the switch LSI. The switch blade delivers 100% more performance per watt than other 10GbE switch blades in the industry. Yasuo Hidaka Fujitsu Laboratories of America, Inc., USA

MxN optical matrix switch using polymer thermo-optic total-internal-reflection switches

Abstract: We have developed a fully non-blocking optical matrix switch using the polymer thermo-optic TIR (total-internal-reflection) switch as a unit switching element. The TIR switch consists of two multimode polymer optical waveguides crossing each other and a heater on the crossing region. The fabricated 2×2, 4×4 and 8×8 optical matrix switch chips showed excellent optical properties. The insertion losses were less than about 2.5 dB and 4.5 dB for the 4×4 and 8×8 matrix switches, respectively. The switching isolation in the turned-off state was higher than 40 dB, the switching time was about 3 ms, and the electrical power consumption for each switching element could be below 30 mW. To our knowledge, our optical matrix switch has the simplest structure and can be mass-produced very easily and inexpensively.

Mach-Zehnder based optical switches in silicon-on-insulator

Abstract: In this paper, we experimentally demonstrated a series of Mach-Zehnder optical switches on silicon-on-insulator, including the 2×2, 1×3 electro-optical switch, 3×3 thermo-optical switch using a single combined phase shifter, four-port broadband electro-optical routing switch