Showing papers on "Banyan switch published in 2016"

Polarization-Rotator-Free Polarization-Diversity 4 $times$ 4 Si-Wire Optical Switch

Abstract: We present a polarization-diversity 4×4 optical switch composed of silicon-wire waveguides. The proposed 4×4 switch does not require a polarization rotator, which enforces a modification in a standard complementary metal-oxide-semiconductor (CMOS) process to achieve vertical asymmetry. The switch is fabricated on a 300-mm silicon-on-insulator (SOI) wafer with argon fluoride (ArF) immersion lithography, and its footprint is 2.1 mm × 1.1 mm. The switch exhibited a 12.5-dB on-chip loss, a 1.9-dB polarization-dependent loss, and an approximately 5-ps differential group delay.

Demonstration of 720×720 optical fast circuit switch for intra-datacenter networks

Abstract: Intra-datacenter traffic is growing more than 20% a year. In typical datacenters, many racks/pods including servers are interconnected via multi-tier electrical switches. The electrical switches necessitate power-consuming optical-to- electrical (OE) and electrical-to-optical (EO) conversion, the power consumption of which increases with traffic. To overcome this problem, optical switches that eliminate costly OE and EO conversion and enable low power consumption switching are being investigated. There are two major requirements for the optical switch. First, it must have a high port count to construct reduced tier intra-datacenter networks. Second, switching speed must be short enough that most of the traffic load can be offloaded from electrical switches. Among various optical switches, we focus on those based on arrayed-waveguide gratings (AWGs), since the AWG is a passive device with minimal power consumption. We previously proposed a high-port-count optical switch architecture that utilizes tunable lasers, route-and-combine switches, and wavelength-routing switches comprised of couplers, erbium-doped fiber amplifiers (EDFAs), and AWGs. We employed conventional external cavity lasers whose wavelength-tuning speed was slower than 100 ms. In this paper, we demonstrate a large-scale optical switch that offers fast wavelength routing. We construct a 720×720 optical switch using recently developed lasers whose wavelength-tuning period is below 460 μs. We evaluate the switching time via bit-error-ratio measurements and achieve 470-μs switching time (includes 10-μs guard time to handle EDFA surge). To best of our knowledge, this is the first demonstration of such a large-scale optical switch with practical switching time.

Ultra-compact 32 × 32 Strictly-non-blocking Si-wire PILOSS Switch

Abstract: A compact 32×32 path-independent-insertion-loss (PILOSS) thermooptic switch based on CMOS-Si photonics is introduced. Switch design, advanced CMOS-compatible fabrication process, and electronic packaging for more than 2000 I/Os are discussed.

Design of MEMS based ‘cross over junction’ for T-type switch

Abstract: This paper presents a novel design approach of T-type RF MEMS switch cross over junction, implemented using symmetric toggle switch (STS) as a basic building block. T-type switches are key elements for designing redundancy switch matrices. Proposed design is a dual type switch, i.e. under operation same bridge is used as an ohmic series switch as well as a capacitive shunt switch. This reconfigurable switch constitutes the cross over junction part for the T-type switch. Simulated results show an insertion loss of < 0.2 dB upto 10 Ghz and isolation is better than −20 dB over a band of 5 Ghz through capacitive path and is better than −80 dB up-to 10 Ghz through ohmic contact path. STS as a building block is used for designing cross over junction and is a technologically mature device. The designed actuation voltage of this cross over switch is 4.75 Volts and simulated resonant frequency is 3.253 KHz.