Showing papers on "Barrier layer published in 1972"

Flame and radiation resistant cable

Abstract: A flame retardant, radiation resistant insulated conductor, either in single conductor form or having a plurality of insulated conductor assemblies each comprised of an electrical conductor core, a flexible flame-resistant barrier layer of an inorganic electrical insulating material which surrounds the core, an electrical insulating layer of a polymer material which surrounds the barrier layer, a second flame retardant barrier layer of an inorganic electrical insulating material which surrounds the polymer insulating layer, and a second electrical insulating layer of a halogen containing polymer which surrounds the second barrier layer and jackets the insulated conductor. The plurality of insulated conductors are wrapped together, preferably twisted together, within a flame retardant barrier shell of an inorganic electrical insulating material. The shell is jacketed with a flexible flame retardant, electrical insulator covering of a halogen containing polymer.

Stable bonded barrier layer-telluride thermoelectric device

Abstract: A stable, highly efficient, low resistance bonded thermoelectric device in which a barrier layer is disposed between an electrode and a thermoelement, the barrier layer being impermeable to diffusing contaminants from the electrode while having a coefficient of thermal expansion substantially different from that of the electrode and thermoelements. The barrier is constructed such that it will deform with the electrode and thermoelement when subjected to temperature variations rather than cause thermal stress failure of the bonded assembly.

X-ray image intensifier input

Abstract: A barrier layer of an electrically conductive material such as indium oxide (In2O3), optically transparent to x-ray phosphor luminescence, is disposed between the phosphor layer and photocathode film of an x-ray image intensifier tube to provide sufficient electrical sheet conductance relative to the photocathode film. The barrier layer provides electron replenishment to the photocathode at all points of electron emission therefrom to thereby reduce potential drop laterally across the photocathode from the ring electrode to the center of the photocathode, and also minimizes surface irregularities on the phosphor layer to thereby significantly reduce electron-optic image distortion in the image intensifier tube.

Synthetic concrete laminate

Abstract: A synthetic concrete laminate is disclosed comprising an outer synthetic concrete layer bonded to an intermediate barrier layer comprised of a synthetic resin, the barrier layer being in turn bonded to a carrier layer comprised of a synthetic resin with reinforcing fibers embedded therein.

Deterioration of reflecting coatings by intermetallic diffusion

Abstract: Gold diffraction gratings overcoated with Al + MgF2 to increase their efficiency in the vacuum ultraviolet suffered a severe loss in efficiency within six months to a year after coating; for example, from 50% to 2% at λ1216 A. The cause of this loss was assumed to be interdiffusion of Au and Al; therefore, a more complete study of Au–Al film combinations was performed. The coatings were aged at room and elevated temperatures. Reflectance measurements were made in the visible and vacuum ultraviolet spectral regions. For wavelengths longer than λ900 A, the measurements show very little change until the diffusion boundary reaches the penetration depth of the radiation. If Al is the first surface layer, however, reflectance measurements at λ584 A permit measuring the progress of the diffusion boundary toward the Al surface because of the low absorptance of Al at this wavelength. Interdiffusion can be effectively eliminated by the use of thin dielectric layers such as SiO and the natural oxide of Al. Such protected coatings have been exposed for one week at a temperature of 170°C with no visible sign of diffusion, whereas a similar coating without the barrier layer would become useless in less than 1 h. Some preliminary studies have been made with Pt–Al film combinations.

Thyristor with amplified firing current

Abstract: A thyristor structure includes an outer emitter layer of one conductivity type provided with a main electrode and an underlying base layer of opposite conductivity. The emitter layer is provided with a central opening through which small-area contact is made to the base layer to establish a firing current, and surrounding the small-area contact is an annular zone also located within the opening and which exhibits the same type of conductivity as the emitter layer. One or more additional openings are provided in the emitter layer laterally outward of the annular zone and through which small-area contact(s) serving to establish auxiliary firing current is(are) made to the base layer, and the annular zone and said additional small-area contact(s) are linked to each other by way of a conductor without an intermediate barrier layer.

Barrier layer for liquid crystal-containing elements

Abstract: AN IMPROVED BARRIER LAYER CONTAINING A POLYMERIZED BLEND OF AT LEAST 50 MOLE PERCENT OF ONE OR MORE A,BETHYLENICALLY UNSATURATED AMIDES, 0 TO 50 MOLE PERCENT OF AN A,B-ETHYLENICALLY UNSATURATED SULFO ESTER, AND 0 TO 10 MOLE PERCENT OF A CROSSLINKABLE MONOMER IS DISCLOSED FOR USE IN AN ELECTRO-OPTICAL ELEMENT CONTAINING A PHOTOCONDUCTIVE LAYER, A LIQUID CRYSTAL FILM, AND THE BARRIER LAYER SANDWICHED THEREBETWEEN.

Barrier layer for liquid crystal-containing elements

Abstract: AN IMPROVED BARRIER LAYER CONTAINING POLY(VINYL ALCOHOL) IS DISCLOSED FOR USE IN AN ELECTROPTICAL ELEMENT CONTAINING A PHOTOCONDUCTIVE LAYER, A LIQUID CRYSTAL FILM, AND THE BARRIER LAYER SANDWICHED BETWEEN THEM.

Electrophotographic photosensitive member containing a nitrocellulose-polyvinyl pyrrolidone barrier layer

Abstract: An electrophotographic photosensitive member comprises a support, a barrier layer overlying the support, the barrier layer comprising a composite of nitrocellulose and polyvinylpyrrolidone, and an organic photoconductive layer overlying the barrier.

Slotted electrical connector of copperbased alloy separated from an indium coating by a barrier layer

Abstract: Means are disclosed to maintain the long-life resistance characteristics of contacts used in solderless connectors and fabricated from indium plated, copper based alloy. A barrier layer is plated between the alloy of the contact and the indium layer beneficially used with aluminum conductor wire.

Dissolution Behavior of the Barrier Layers of Porous Oxide Films during the Initial Period of Anodizing of Aluminum

Abstract: Anodizing of Al was carried out in oxalic acid-oxalate solutions over the pH range from 1.7 to 6.4 at constant anodic potentials and variation of the anodizing current, the structure of the film and the amount of dissolved Al ions were observed with time. The current-time curve was divided into four successive periods of a, b, c and d in relation to the surface struc-ture of the film. In the initial period of anodizing (period a), the current falls nearly expo-nentially with time in accordance with the growth of the barrier layer. After a certain period of time the lowering of current ceases (period b) and the current begins to increase with time (period c) and finally reaches a steady value (period d), owing to the pore initiation and the growth of the porous layer. It was found that an appreciable amount of film dissolves even in the period a; the rate of dissolution is affected strongly by the anion species in the solution but scarcely changes with the pH of the solution. A high rate of dissolution observed at periods c and d increased remarkably with rise of anode potential and with fall of pH. This is explained in terms of the mechanism which assumes the formation of cation defects at the outermost part of the barrier layer and their interaction with protons in the solution. A new method of determining the barrier layer thickness of the porous type film was proposed.

Electrical barrier layer coating and method for making same

Abstract: Magnetic metal inductors are provided with electrical barrier layers made by forming an adherent oxide layer on the surface of the inductor, treating the oxide layer with at least one Group III metal, and then oxidizing the Group III metal. The electrical barrier layers are electrically insulative or dielectric. The layers can withstand high temperatures without deterioration and are corrosion resistant.

Metallic contact for semi-conductor devices

Abstract: 1286834 Semi-conductor devices GENERAL ELECTRIC CO 22 Oct 1969 [25 Nov 1968] 51840/69 Heading H1K An ohmic contact to a region of a semiconductor, e.g. silicon exposed through a layer of insulation consists of a layer of or topped with aluminium adjacent the region and an upper layer of readily solderable material such as gold, silver, tin and/or lead separated therefrom by a layer of material preventing interaction with the aluminium and comprising a layer of electroless nickel separated from the aluminium by a layer of palladium which may be deposited from a palladium chloride solution. Underlying the layer of aluminium may be a layer of one or more of titanium, vanadium and chromium. A conductive overlayer, e.g. of silver, may be vapour deposited on the barrier layer to facilitate selective application of the solderable material (gold) by electroplating through a photoresist mask. Subsequently any of the silver not plated with gold is etched away. Tincoated copper leads may be fused to the gold layers in a heated press, and the assembly consolidated by heating at 300-400‹ C. for 30 minutes. If desired lateral extensions of the contacts may be used as interconnections of an integrated circuit or as beam leads.

Superconductive tunneling device

Abstract: 1283690 Superconductor devices INTERNATIONAL BUSINESS MACHINES CORP 2 Nov 1970 [12 Nov l969] 51956/70 Heading HlK In a tunnelling device having a pair of superconductive electrodes separated by a barrier, at least one of the electrodes is single crystalline. The device may form a Josephson junction. The devices are produced by depositing the first electrode on a single crystal substrate, for example by RF or DC sputtering, thermal evaporation, or chemical vapour transport. The barrier layer is then formed for example by thermal oxidation, anodization, ion implantation, sputtering, or evaporation, and may be monocrystalline or amorphous, and the second electrode is then deposited. It is stated that the top electrode may be monocrystalline even if the barrier layer is amorphous providing the latter layer is thin. Examples of in-line and cross-film tunnelling cryotrons are described. A triode structure comprising one electrode separated from two further electrodes by tunnelling junctions (Fig. 6) and a known cryogenic memory array (Fig. 8) modified by utilizing monocrystalline electrodes and barrier layers are also described. The Specification contains a list of materials suitable for the substrate, electrodes and barrier layer.