Showing papers on "Barrier layer published in 1976"

Surface treatment method of copperfoil

Abstract: The present invention relates to a method of treatment on the surface of copperfoil mainly used for printed circuits. More particularly, it relates to a method of electrodeposition of a binary alloy consisting of zinc and tin as a barrier layer against copper migration into an adhesive substrate during subsequent heat press lamination, while a binary alloy on copperfoil is converted to ternary alloy defusing into copper by heat press lamination resulting in a layer of Cu-Zn-Sn, ternary alloy. This layer prevents spottings on the etched surfaces and provides high resistance to hydrochloric acid, and better adhesion than hitherto used alloys.

Method of forming an integrated circuit region through the combination of ion implantation and diffusion steps

Abstract: A METHOD OF FORMING AN INTEGRATED CIRCUIT REGION THROUGH THE COMBINATION OF ION IMPLANTATION AND DIFFUSION STEPS Abstract A region in an integrated circuit substrate is formed by first ion implanting impurities of a selected conduct-ivity-determining type into a semiconductor substrate through at least one aperture in a masking electrically insulative layer, and then diffusing a conductivity-determining impurity of the same type through the same aperture into said substrate. The method has particular application when the elec-trically insulative layer is a composite of two layers, e.g., a top layer of silicon nitride and a bottom layer of silicon dioxide and the aperture is thus a pair of registered openings respectively through said silicon nitride and silicon dioxide layers, and the aperture through the silicon dioxide layer has greater lateral dimensions than that in the silicon nitride layer to pro-vide an undercut beneath the silicon nitride ion implanta-tion barrier layer.

Glass bonding of manganese-zinc ferrite

Abstract: A method of minimizing or eliminating reactions between a surface of manganese zinc ferrite and a glass bonding composition applied thereto is disclosed, wherein a barrier layer is formed upon the manganese zinc ferrite surface prior to the application of the glass bonding composition. The barrier layer is a chromium layer about 3 - 170 microinches thick. The resulting product is suitable for use in radio frequency recording apparatus, and especially for multi-core magnetic heads.

Resinous moisture resistant laminate

Abstract: A moisture, fungi, and alkaline salt resistant laminate for floor, wall or other covering purposes comprising a moisture permeable backing layer, preferably a sized asbestos felt, a barrier layer overlying the backing layer resistant to penetration and degradation by moisture, fungi and alkaline salts, preferably a thermoplastic resin such as polyvinyl chloride or mixtures of resins having the mentioned characteristics, a resinous body layer overlying the barrier layer preferably of an open cellular character and a resinous wear layer overlying the body layer.

Laminate for use in packing oil

Abstract: A laminate, which has improved resistance to the passage of oil therethrough and which is suitable for the packaging of oleaginous substances, particularly motor oil, is described. The laminate comprises a pair of outer layers of a solid ethylene polymer, such as polyethylene or copolymers of ethylene with propylene or butene-1, and at least one inner barrier layer of a dried emulsion coating of a vinylidene chloride copolymer, the inner barrier layer being bonded to the inner surfaces of the outer layers. One of the outer layers may be bonded to the inner barrier layer by means of an oil-resistant adhesive, or, in the case where there are two inner barrier layers, the inner layers may be bonded together by an oil-resistant adhesive between the dried emulsion coatings.

Magnetic recording material

Abstract: PURPOSE: To obtain a magnetic recording material of a high density and high output by closely providing a horizontal magnetically anisotropic layer having a horizontal magnetic anisotropy against the surface between a vertical magnetically anisotropic layer and barrier layer. CONSTITUTION: When a magnetic head (not shown in the figure) is installed to a surface 2' only, lines of magnetic force coming out from the N-pole of the magnetic head reach a horizontal magnetically anisotropic layer 5 having a relatively good magnetic permeability after passing through a vertical magnetically anisotropic layer 3 and the lines reach the S-pole of the magnetic head after they are narrowed down in the layer 5 and pass through the layer 3. Since the layers 5 and 3 closely contact with each other and no barrier layer 4 and aluminum or its alloy 1 exist between them 3 and 5, the lines of magnetic force easily reach the horizontal magnetically anisotropic layer 5 and, since the lines of magnetic force narrowed down in the layer 5 is prevented from expanding when they pass the layer 3 before reaching the S-pole, the magnetic flux density increases. COPYRIGHT: (C)1985,JPO&Japio

Visual image display device

Abstract: A visual image display device with improved resolution contains a pair of conductive electrodes in spaced relationship. Adjacent one electrode is a first barrier layer which is typically a resin such as polyamide containing a readily oxidizable and reducible material such as zinc nitrate. Adjacent the other electrode is a thin film of solvent, for example, 1,2-dichloroethane. Positioned between the film of solvent and the first barrier layer is a second barrier layer which is a normally light transmitting recording medium. The second barrier layer is both photoionizable and capable of electrochemically producing a colored species. Typically the second barrier layer is a solid containing a resin such as polyvinyl butyral, an active material such as 1-p-anisyl-3 diethylamino styryl-5-diethylaminophenyl-2-pyrazoline and, in selected embodiments, an activator such as carbon tetrachloride.

Electric cable with a low-conductivity layer - has a barrier layer between this and the outer plastics sheath

Abstract: A high voltage cable (for >=20kV) with several conductors, a low conductivity layer contg. C black in an elastomeric or plastomeric plastics mtl. and an outer layer of metal wires covered with a plastics sheath, has a barrier layer around the low conductivity layer, consisting of a foil with a polyester, polyamide or polypropylene base to prevent permeation from the low conductivity layer and consequent discolouration of the outer sheath.

Ventilated layered ceiling or wall structure panel - with waterproof and vapour repellent insulating layers, and spacers forming ducts

Abstract: The element, made of insulating material, incorporates a panel-shaped insulating layer, for depositing in roof and/or wall structures, where ventilating ducts are fitted below or behind rigid exterior wallings The insulating layer (4) is given a vapour barrier layer (9) on one side, and a diffusion layer which is virtually waterproof and vapour-proof (10) on the other The ventilating ducts (5) are formed by the use of spacer units (6), with their retaining arms passing through the diffusion layer (10) into the insulating layer, which may be made of foamed plastics, or of bonded or un-bonded rock wool or asbestos fibres The vapour-barrier layer may be of aluminium This makes it water-repellant, and provides effective heat insulation, even though ventilated

Shottky barrier layer gate type twine gates fielddeffect transistor an d its making

Abstract: PURPOSE:How to reduce parasitic resistance between two gate electrodes of schottky type field-effect transistor with twine gates composition and to decrease DC and microwave losses by putting a metal with ohmic contact between its two gate electrodes.

Interdiffusion of metallic contact layers on silicon IMPATT diodes

Abstract: A comparative study, using Rutherford backscattering of He ions, of Ag/Pt/Cr and Au/Pt/Cr metallisations on silicon substrates has shown that significant interdiffusion takes place for Ag/Pt/Cr at temperatures around 350°C, resulting in the removal of the platinum barrier layer. No such effect takes place at the same temperature for Au/Pt/Cr. These results are consistent with the observed life-test performance of devices with these metallisations.

Some Observations of the Relation between Chemical Surface Treatments and the Growth of Anodic Barrier Layer Films.

Abstract: : Composite oxide films on bare 2024-T3 aluminum were produced by surface chemical treatments followed by anodic oxidation in a barrier forming electrolyte. The chemical characteristics of the composite film are studied. This type of information can be important in determining the overall corrosion resistance and durability of adhesively bonded structures.

Integrated circuit dielectric base - has circuit components in monocrystalline semiconductor islands covered with polycrystalline semiconductor layer

Abstract: Circuit components are produced in monocrystalline semiconductor islands covered with a polycrystalline semiconductor layer, with a dielectric layer between the layer and the islands to insulate the layer from the islands and the islands from each other. A dielectric layer is deposited on a monocrystal chip with a groove pattern. At least two polycrystalline layers and at least one oxygen diffusion barrier layer are deposited on the dielectric layer, so that the outermost layer is a plycrystalline semiconductor layer, and the opposite plane main surface is removed up to the single crystal islands. The outer surface of the outermost polycrystalline semiconductor layer (14c) is ground off to a thickness (x) sufficient to prevent a disturbing curvature of the insulating layer below it due to oxygen diffusion into the outer polycrystalline layer.

Polycrystalline silicon on coated steel substrates

Abstract: Steel is the most economical substrate for the deposition of silicon. At temperatures used for the chemical vapor deposition of silicon, however, a barrier layer must be used to prevent the diffusion of iron from the substrate into the silicon layer. Tungsten was found to be ineffective as a diffusion barrier when silicon was deposited by the thermal decomposition of silane at 900/sup 0/C and above. Borosilicate deposited by the oxidation of a silicon-diborane mixture was found to be an effective barrier at temperatures up to 1150/sup 0/C. Silicon layers deposited at low temperatures and high rates consist of small crystallites with a strong preferred (110) orientation, while those deposited at high temperatures and low rates consist of larger crystallites with more random orientation. Silicon p--n junctions deposited on borosilicate/steel substrates show poor electrical characteristics because of the high concentration of grain boundaries, and solar cells have low conversion efficiencies.