Showing papers on "Barrier layer published in 1981"

Porous anodic film formation on aluminium

Abstract: The development of porous anodic films on aluminium in the major forming acids has been established1–5 However, little information has been provided to explain the markedly different rates of steady-state film growth for anodizing in constant voltage conditions in these acids, with the anodic film cell parameters dependent on the cell voltage1 The regular cellular morphology of the steady-state films and the substructure developed in the forming acids are revealed in Fig 1 The characteristic parallel-sided pores, at the centres of approximately hexagonal cells, pass normal to the macroscopic metal surface but are separated from it by the barrier layer Here, from considerations of the film material substructure and the distribution of species within the film derived from the forming acid, it is postulated that the likely variations in the local field strengths across the barrier layers can explain the steady-state anodizing behaviour observed in the different acids in constant voltage conditions

Diffusion barriers in layered contact structures

Abstract: The concept of a diffusion barrier is discussed in the context of thin‐film metallization systems. The conditions that an effective thin‐film diffusion barrier should meet are enumerated. The dominant role of defects in determining the kinetic properties of a barrier layer is pointed out, and the consequent importance of the method of deposition and the parameters prevailing during deposition are stressed. Examples of the practically important cases of the stuffed barrier, the passive compound barrier, and the sacrificial barrier are given, with special emphasis on the latter as applied to Al contacting of silicide layers. Unconventional ways of forming multiple or novel diffusion barriers are briefly mentioned as well.

Membrane closure structure

Abstract: A retortable membrane closure structure for containers is disclosed which includes a first adhesive layer, an intermediate layer, a second adhesive layer and an outer barrier layer. Bond strengths and tear strengths of the layers are selected such that upon peeling the membrane from a container to which it was sealed initial failure occurs within the intermediate layer, followed by failure between the second adhesive layer and the intermediate layer, providing a clean peel between the layers.

Thermosensitive recording adhesive label

Abstract: A thermosensitive recording adhesive label comprising: a support sheet; a thermosensitive coloring layer formed on the front side of the support sheet, the thermosensitive coloring layer comprising a colorless or light-colored leuco dye and an acidic material capable of coloring the leuco dye when heat is applied thereto; a front barrier layer formed on the thermosensitive coloring layer, the front barrier layer comprising a polymeric material capable of preventing intrusion of materials which may discolor said thermosensitive coloring layer; a back barrier layer formed on the back side of the support sheet, the back barrier layer comprising a polymeric material capable of preventing intrusion of materials which may discolor the thermosensitive coloring layer; an adhesive layer formed on the back barrier layer; and a disposable backing sheet which is attached to the adhesive layer and can be peeled off the adhesive layer when the thermosensitive recording adhesive label is used.

Photoconductive member with α-Si(C) barrier layer

Abstract: A photoconductive member comprises a support, a photoconductive layer constituted of an amorphous material containing silicon atoms as matrix and containing hydrogen atoms or halogen atoms, and an intermediate layer provided between them, said intermediate layer having a function to bar penetration of carriers from the side of the support into the photoconductive layer and to permit passage from the photoconductive layer to the support of photocarriers generated in the photoconductive layer by projection of electromagnetic waves and movement of the photocarriers toward the side of the support, and said intermediate layer being constituted of an amorphous material containing silicon atoms and carbon atoms a constituents. A photoconductive member having a support, a photoconductive layer constituted of an amorphous material containing silicon atoms as matrix and containing hydrogen atoms or halogen atoms as a constituent, and an intermediate layer provided between said support and said photoconductive layer, is characterized in that said intermediate layer is constituted of an amorphous material containing silicon atoms and carbon atoms as constitution elements. A photoconductive member having a support, a photoconductive layer constituted of an amorphous material containing silicon atoms as matrix and containing hydrogen atoms or halogen atoms as a constituent, and an intermediate layer provided between said support and said photoconductive layer, characterized in that said intermediate layer is constituted of an amorphous material containing silicon atoms and carbon atoms as constitution element.

Photoconductive member having barrier and depletion layers

Abstract: A photoconductive member which is stable in its electrical and optical characteristics, not influenced by circumstances for its use, and possesses extremely high sensitivity to light, remarkably high anti-photo-fatigue property, and deterioration-resistant against repeated use, the photoconductive member comprising a substrate; a photoconductive layer; a barrier layer between the substrate and the photoconductive layer, and having a function of substantially inhibiting injection of carriers from the substrate side to the photoconductive layer; and a depletion layer region formed in the interfacial region of the photoconductive layer and the barrier layer, wherein the photoconductive layer and the barrier layer are made of an amorphous material with silicon as a matrix and hydrogen as a constituent atom, a part of the barrier layer is present between the depletion layer region and the substrate in such a thickness that, in order to inhibit injection of the carriers having the same polarity as that of minority carriers in the barrier layer from the substrate side to the photoconductive layer, probability of the carrier reaching the depletion layer region from the substrate side may be substantially neglected, and the photocarriers in the photoconductive layer having the same polarity as that of majority carriers in the barrier layer, among the photo-carriers to be generated in the photoconductive layer by irradiation of electromagnetic waves, are caused to move in the direction of the barrier layer.

Method of forming a solder interconnection capable of sustained high power levels between a semiconductor device and a supporting substrate

Abstract: A process for forming ball limiting metallurgy pad structure for a semiconductor device solder bond interconnection comprising: forming a conductive layer that is adherent to the semiconductor device passivating layer, forming a relatively thick layer of a material having a high thermal conductivity, forming a barrier layer that protects the high conductivity layer by physically preventing any interaction or alloying with the subsequent layers, and forming a layer of a material that is solder wettable.

Thermal-mechanical treatment of composite nuclear fuel element cladding

Abstract: Cladding for nuclear fuel elements which is formed with a zirconium metal barrier layer bonded to the inside surface of a zirconium alloy tube and which is sized by a cold working tube reduction process and is heat treated after final reduction at a temperature and for a time period which allows substantially complete recrystallization of the zirconium metal barrier layer and provides a fine-grained microstructure therein and which stress-relieves but does not fully recrystallize the zirconium alloy tube. The crystallographic structure of the zirconium metal barrier layer may be improved by compressive deformation such as shot-peening.

Method of transferring designs onto articles

Abstract: A decorative laminate and method of transferring designs onto articles. The laminate is formed of a transfer substrate affixed to a support member. The transfer substrate is composed of a protective layer, an ink layer and a resinous coating layer. Optionally, a barrier layer is provided beteen the resinous layer and the ink layer. In many applications the protective coating layer may be omitted. The laminate is applied to an article using a heated silicone rubber transfer pad to which the transfer substrate adheres during the transfer process.

Coating device with As2 -O3 -SiO2

Abstract: A method for fabricating a metal oxide semiconductor device having at least one level of polycrystalline silicon interconnects and novel insulation layers for multilevel interconnects. In one embodiment, the fabrication processing includes forming a layer of arsenic doped glass as a multilevel interconnect system insulating layer. In another embodiment, the method includes the formation of a multilevel interconnect system insulating layer which includes the formation of a layer of undoped silicon dioxide as a barrier layer and then forming a layer of arsenic doped glass upon the undoped layer.

Layered photoconductive member having barrier of silicon and halogen

Abstract: Disclosed is a panchromatic photoconductive element for electrophotography having a layered structure comprising a substrate, a barrier layer and a photoconductive layer. The barrier layer inhibits injection of carriers from the substrate. Amorphous silicon forms a matrix for either the photoconductive layer or the barrier layer.

Photoconductive member having barrier layer and amorphous silicon charge generation and charge transport layers

Abstract: A photoconductive member having a support, amorphous charge generation and charge transport layers and a barrier layer between the support and the charge generation layer. The charge generation layer contains from 0.1 to 10 atomic percent of a conduction controlling impurity. Intermediate and surface barrier layers are also employed and additional transport layers are utilized.

Multilayered organic photoconductive element and process using polycarbonate barrier layer and charge generating layer

Abstract: Organic photoconductive elements which are stable and sensitive over a broad range of the spectrum, including the near infrared band, having a charge generating layer and a charge transport layer carried on an electroconductive support are disclosed. The invention involves the use of a first layer between the support and the charge generating layer which is capable of functioning as (i) an adhesive bonding layer on the electroconductive support to provide a receptive and retentive base layer for the charge generating layer and (ii) as a barrier layer to prevent substantially any leakage of charge from the surface of the photoconductor, characterized by the first layer comprising at least one polycarbonate having a weight average molecular weight ranging from about 25,000 to about 45,000, in combination with a charge generating layer that comprises at least one organic pigment which is sensitive to near infrared radiation.

Tungsten barrier contact

Abstract: A semiconductor contact has a thin barrier layer less than 500 angstroms in thickness of a metal such as tungsten applied between an aluminum contact layer and a metal-semiconductor compound. The metal semiconductor compound forms a junction with an underlying semiconductor substrate. The thin barrier prevents a chemical reaction between the aluminum of the contact layer and the metal of the metal-semiconductor compound.

Process for manufacture of hollow bodies from synthetic materials

Abstract: The conventional process of manufacturing hollow bodies with multi-layer walls using extrusion and blow molding techniques is improved by first making a preform of a thermoplastic carrier layer with an adhesive layer on one or both sides and then applying the additional layer or layers to the adhesive layer(s) in a separate operation. The additional layer(s) has properties different from the carrier layer and serves as an insulation or barrier layer to shield the carrier layer from substances to be contained by or which will surround the hollow body. Among other advantages, the improved process allows recycling of waste and surplus preform material, stronger heat-seal seams in the hollow bodies, less complicated extrusion equipment and more economic use of expensive barrier layer materials.

SrTiO3 barrier layer capacitor

Abstract: Formulations for a variety of air sintered ceramic barrier layer capacitors are provided wherein from 0.3 to 1.7 mole % of donor material is added to a strontium titanate and the relative amounts of strontium and titanium have been adjusted so that large-small cation balance and charge balance may be achieved by strontium vacancies, e.g. ##EQU1## These low cost materials have large grains and exhibit high dielectric constants.

Method for fabricating DH lasers

Abstract: Double-heterostructure (DH) diode lasers based upon very thin epitaxial layers of Ga x In 1-x As y P 1-y grown on and lattice-matched to oriented InP substrates are disclosed. A preferred method for fabricating such lasers involves the successive growth, on an InP substrate, of an InP buffer layer, the GaInAsP active layer and an InP top barrier layer using liquid phase epitaxy techniques to grow these layers from supercooled solutions. Stripe geometry lasers can be fabricated from these materials which emit in the 1.1-1.3 μm range and are capable of cw operation for extended periods at room temperature.

Method of fabrication of planar bubble domain device structures

Abstract: A method of fabricating a bubble domain device composite structure on a substrate of depositing a barrier layer of a suitable polymeric dielectric material on the substrate; subsequently depositing a layer of electrically conductive material thereover; subsequently depositing a spacer layer of a liquid polymeric dielectric material over the conductive layer; processing the spacer layer so that the surface of the spacer layer is substantially planar; and subsequently depositing a layer of a magnetically operative material over the spacer layer.

III-V Group compound semiconductor light-emitting element having a doped tantalum barrier layer

Abstract: Disclosed is a III-V Group compound semiconductor light-emitting element having a III-V Group compound semiconductor body with a p-n junction and including a p-type layer involved in forming the p-n junction; and a multi-layer electrode mounted on the p-type layer of the semiconductor body. The electrode comprises a first layer of gold alloy containing a small amount of beryllium or zinc and formed in direct contact with the p-type layer of the semiconductor body and an uppermost layer formed of gold or aluminum. A tantalum layer doped with carbon, nitrogen and/or oxygen is formed between the first layer and the uppermost layer by means of vacuum vapor deposition.

Liquid drop jetting type recording device

Abstract: PURPOSE:To obtain the device inscribed on the title to give a documentary picture in high speed and having fine dignity by a method wherein a heating part to send out a recording liquid is made to have a heating resistor layer intervened a barrier layer having a specified roughness of surface, and the sending out of ink is performed always steadily with low consumption of electric power. CONSTITUTION:The heating part 2 to act as a thermic acting part is prepared on the surface of a base plate 1 to institute the heating part, and the heating part 2 is constructed by laminating in order a heat accumulating layer 7, a heating resistor layer 11, electrodes 8 and a protective layer 9 by vacuum sedimentation method on a base plate 6. Plural microscopic concave part VH are formed on the surface of protective layer 9 to make the surface roughness to be 0.05-2S (JIS standards B0601), and are distributed nearly uniformly over the whole face of heating part 2. The generation of bubbles in ink IK coming in contact with the heating part 2 is made to be speedy, and the energy efficiency at that time is extremely improved.

Thin film electroluminescent device

Abstract: A thin film electroluminescent device constructed on a smooth surface substrate on which a base conductive layer is formed, followed in sequence by an impurity doped barrier layer, an electrically resistive layer and a counterelectrode layer. The impurity doped barrier layer is doped with a material which exhibits electroluminescence. The impurity doped barrier layer is produced in a controlled oxidation process of the base conductive layer which is alloyed to a minor extent with the impurity material.

Thermal insulating and waterproofing of masonry structures by entrapment of multilayered dead air spaces with use of high speed injected liquid-air stream

Abstract: A thermally insulated masonry wall comprising a plurality of thermally insulated barrier layers extending laterally inwardly from the surface of the wall. This is accomplished by placing a nozzle against the surface of the wall and blasting a pulsating air stream containing a thermal insulating liquid which penetrates through the surface of the wall to provide a first barrier layer embedded deeply in the wall and laterally spaced inwardly from its surface. A second operation provides a second but shallower barrier layer. This can be followed by a third or more applications. Each of the resulting barrier layers comprises particles of masonry material coated with thermal insulating liquid and entrapping air in the interstices formed by the coated masonry particles.

Fluorescent lamp having improved barrier layer

Abstract: A cost-reduced fluorescent lamp having an electrically conductive first layer carried on the inner surface of a vitreous envelope and an electrically non-conductive second layer carried on the electrically conductive first layer. The electrically non-conductive second layer is a mixture of very finely-divided aluminum oxide and finely-divided titanium dioxide in predetermined relative weight ratio.

Molding method of primary molding for laminated molding by polyethylene terephthalate resin

Abstract: PURPOSE:To prevent the obtained primary molding from chalking by a method wherein when a barrier layer body is extruded in a manner that the external superficial face of the inner layer body molded with polyethylene terephthalate is covered, a protective material is installed at a gate part of the inner layer body. CONSTITUTION:When the primary molding of a polyethylene terephthalate (hereafter referred to as PET) resin laminated molding is molded, an inner layer body 2 of a drum type having a bottom is extruded with PET, and a barrier layer body 5 by means of a synthetic resin material such as a polyamide resin, etc. having a high gas barrier quality is extruded in a manner that the inner layer body 2 is made a part of a mold and the external superficial face of the inner layer body 2 is covered. At this time, a protective material 4 having a heat resistance, heat insulating quality and a righdity such as an Al foil is positioned and attached to the gate 3 part of the inner layer body 2 in order that the extrusion pressure and heat of a mold resin material of the barrier layer body may not give a direct operation, and with this, the primary molding can be prevented from chalking.

Process for forming a polysilicon gate integrated circuit device.

Abstract: In a process for forming a CMOS integrated circuit structure having polysilicon gates (18, 24) and interconnections (19) which are all of the same conductivity type, preferably n s-type, polys ilicon is formed into the gate (18) for the n-FET, a barrier layer (20) for the p-FET region (15) and the interconnection pattern (19). Then a layer of arsenosilicate glass (ASG) (23) is formed over the n-FET active region (14), the interconnections (19) and in an area to define the p-FET gate (24) which is etched using the ASG layer (23) as a mask. The device is heated to drive in impurities from the ASG layer (23) to n s dope the polysilicon and form the n-FET source and drain (27, 28). Boron is then implanted into the p-FET source and drain (25, 26), the ASG layer serving to mask the polysilicon from p-type doping. Since the polysilicon which is etched is undoped, highly accurate self alignment is obtained.

An optical recording element and a method of recording information using the element

Abstract: An optical recording element suitable for recording information encoded on a high energy-density radiation beam comprises an improved thermal- and mechanical-barrier layer (30) coated on a heat-deformable recording layer (20). The barrier layer is preferably at least 0.15 mu m thick and comprises a water-soluble polymer having a glass transition temperature when dry of at least 100 DEG C, preferably at least 150 DEG C. The barrier layer is easily coated and does not significantly degrade the performance of the element. Optional layers such as a spacer layer (32) and a topcoat layer (34) may be coated on the barrier layer.

Josephson junction element and manufacture therefor

Abstract: PURPOSE:To easily obtain a barrier layer and to the improve the stability as well by extending a second superconductor on a first superconductor through a barrier layer. CONSTITUTION:A superconductor 1 forming a predetermined pattern is prepared on a glass plate 2 by evaporation, for example. And the superconductor 1 is housed in a container 7 accommodating electrolyte 6 to arrange a metallic body 8 consisting of Li. At that time, a current source 9 is connected across the superconductor 1 and the metallic body 8 through switches 15 to perform the discharge of battery reaction. Next, the current source is connected across the superconductor 1 and the metallic body 8 by transferring the switches 15 to position the metallic body 8 side as positive. And the charge of battery reaction is performed to form a barrier layer 10 consisting of Li1.3Ti2O4 and a layer 16 consisting of LiTiO4 in order on the surface of the region facing to an outer section through the window 4 of the insulating layers 5 of the superconductor 1. The layer 16 consists as the second superconductor extending on the first superconductor (superconductor 1) through the barrier layer and the layer 16 is extended to the outer section by a superconductor for wiring constituting as a superconductor 17.

Dry transfer process which employs ultraviolet light and photosensitive materials

Abstract: The invention relates to a dry transfer process which employs ultraviolet light and photosensitive materials. The transfer materials used comprise a donor complex layer (c) and a receptor layer (c1). The donor complex layer (c) comprises a carrier (1), a priming layer (2), signs or imprints (3) produced by means of a colorless color-producing material, and a barrier layer (4) which is degradable under the action of ultraviolet light. The receptor layer (c1) comprises a carrier 6 coated with a layer (5) comprising a color developer. The transferred symbols or images (7) are obtained without the physical passage of an element or of an image from the donor layer to the receptor layer; their quality is comparable to that of printed characters.

Solid-state imaging device having a color filter array and methods of preparing same

Abstract: A method of making a color filter array comprising differently colored sets of filter elements (22', 24', 26') on a solid-state color imaging device (10) is provided. Each set of filter elements is produced by coating a layer of a radiation-sensitive dyeable composition over the device, exposing the layer to a pattern of radiation corresponding to the desired elements, washing off the unexposed composition and dyeing the residual islands with a dye solution. A set of filter elements is protected from a dye solution used in producing a further set of filter elements by a barrier layer formed of a photocrosslinkable dye-impermeable polymer. This barrier layer is rendered insoluble by exposure to radiation at least in regions (30', 32') underlying filter elements if the imaging device is to be contacted with a solvent for the uncrosslinked polymer, as when removing selected portions of a barrier layer from the device or coating a further barrier layer thereon. The undermining by solvent of filter elements formed on any barrier layer is thereby prevented.