Showing papers on "Barrier layer published in 1983"

Drying agent in multi-layer polymeric structure

Abstract: In a multi-layer polymeric structure having an interior oxygen barrier layer of a moisture sensitive polymeric material such as ethylene-vinyl alcohol, drying agents are incorporated in the structure, particularly in a layer or layers proximate to the barrier layer, to limit the moisture content of the barrier layer to maintain barrier properties.

Barrier layer for photovoltaic devices

Abstract: An improved semiconductor device, adapted to provide electrical current in response to light energy incident thereon, includes a first electrode, an active semiconductor body atop the first electrode, a second electrode atop the semiconductor body, and at least one defect region which is capable of providing a low resistance shunt path for the flow of electrical current between the electrodes of the device. The improvement comprises a continuous transparent barrier layer (1) operatively disposed between the semiconductor body and one of the electrodes of the device and (2) adapted to decrease the flow of electrical current through the at least one defect region of the semiconductor device. The barrier layer is formed from a material chosen from the group consisting essentially of oxides, nitride and carbides of: indium, tin, cadmium, zinc, antimony, silicon, chromium and mixtures thereof. Methods of (1) fabricating improved semiconductor devices and (2) preventing operational mode failures due to latent detents are also disclosed.

Composite decorative article

Abstract: A multilayer decorative article having in order an ink-receptive vinyl film layer, a plasticizer barrier layer, and a pressure-sensitive adhesive layer, the adhesive layer being adapted to maintain adhesion to highly plasticized vinyl substrates, and the intermediate barrier layer being capable of preventing plasticizer from migrating from the vinyl substrate into the vinyl film outer layer.

Unbalanced oriented multiple layer film

Abstract: An unbalanced polymeric film has a plurality of adjacent molecularly oriented layers. The first, second, and third layers are molecularly oriented, and are, respectively (1) polypropylene, (2) anhydride modified polypropylene and (3) a barrier layer of either ethylene vinyl alcohol or nylon or a blend of ethylene vinyl alcohol and nylon. A fourth layer is optionally oriented and serves as a heat sealable layer having good adhesion to the barrier layer. In a more sophisticated structure, the fourth layer is oriented and serves an adhesive layer between the barrier layer and a fifth sealant layer. The fifth layer is then optionally oriented. A process for making the films comprises heating the exterior surfaces of the two surface layers to a temperature between 10° and 100° F. below the respective heat sealing temperature of each of the respective surface layers, stretching the so-heated film, annealing the stretched film, and cooling the annealed film.

Pasteurizable, cook-in shrink film

Abstract: A pasteurizable and/or cook-in shrink film is provided that includes a first or sealing layer of a nonlipophillic polymeric material having a softening point greater than that of the following shrink layer; a second or shrink controlling layer, melt bonded to the first layer, of an ethylene homopolymer or copolymer; a third or adhesive layer, melt bonded to the second layer, of a chemically modified polyethylene being irradiatively cross-linkable and having functional groups with a relatively strong affinity for the following barrier layer; a fourth or barrier layer, melt bonded to the third layer, of a hydrolyzed ethylene-vinyl acetate copolymer; a fifth or adhesive layer as in said third layer, melt bonded to the fourth layer; and a sixth or abuse layer, melt bonded to the fifth layer. An associated method for making the film is also provided that includes full coextrusion and selective irradiation and orientation.

Photoconductive member with alpha -Si(C) barrier layer

Abstract: A photoconductive member comprise a support, a photoconductive layer constituted of an amorphous material containing silicon atoms as matrix and containing hydrogen atoms or halogen atoms, and an intermediate layer provided between them, said intermediate layer having a function to bar penetration of carriers from the side of the support into the photoconductive layer and to permit passage from the photoconductive layer to the support of photocarriers generated in the photoconductive layer by projection of electromagnetic waves and movement of the photocarriers toward the side of the support, and said intermediate layer being constituted of an amorphous material containing silicon atoms and carbon atoms as constituents. A photoconductive member having a support, a photoconductive layer constituted of an amorphous material containing silicon atoms as matrix and containing hydrogen atoms or halogen atoms as a constituent, and an intermediate layer provided between said support and said photoconductive layer, is characterized in that said intermediate layer is constituted of an amorphous material containing silicon atoms and nitrogen atoms as constitution elements. A photoconductive member having a support, a photoconductive layer constituted of an amorphous material containing silicon atoms as matrix and containing hydrogen atoms or halogen atoms as a constituent, and an intermediate layer provided between said support and said photoconductive layer, characterized in that said intermediate layer is constituted of an amorphous material containing silicon atoms and carbon atoms as constitution element.

Polymeric composition of matter, oriented polymeric films and shrink bags made therefrom

Abstract: Molecularly oriented films (10) for use in shrink packaging comprise a blend of 10 to 90% by weight of linear low density polyethylene with ethylene vinyl acetate The blend can form one layer (16) of a triple layer film laminate, the other layers being a barrier layer (14) for instance comprising an ethylene vinyl alcohol copolymer and a third layer (18) which can be ethylene vinyl acetate or a blend similar or identical to that forming the layer (16) As an alternative, a five layer film can utilise the linear low density polyethylene, for one or more of its layers (116, 120, 122, 118), in the form of a blend as aforesaid or alone Bags made from the multiple layer films are especially useful for the shrink packaging of meats having large cavities and bony protrusions

Polymeric structure having improved barrier properties and method of making same

Abstract: A polymeric structure having an oxygen barrier layer (e.g., ethylene-vinyl alcohol copolymer) is heated in the presence of moisture to improve its resistance to oxygen and moisture penetration. A drying agent is incorporated in the multi-layer structure to control the rate of water penetration to, and the amount of water in, the barrier layer.

Electrophotographic sensitive body

Abstract: PURPOSE:To obtain a stable electrophotographic sensitive body having sensitivity to long wavelength light and long life by forming a photoconductive layer composed of an amorphous Se (a-Se) layer, a crystallization prevention layer made of a-Se contg. As, and a crystalline Se layer formed on this crystallization prevention layer. CONSTITUTION:A barrier layer 2, when needed, is formed on a conductive substrate 1, on this layer an electrostatic charge transfer laye 3 made of a-Se is formed, on this layer 3 a crystallization prevention layer 4 made of a-Se contg. As, a charge generating layer 5 made of crystalline Se, and a transparent insulating layer 5 are successively laminated. The crystallization prevention layer 4 is, e.g., made of a-Se contg. 0.2-50% As or such a-Se and 0-20ppm halogen. Since the interposition of the crystallization prevention layer 4 hinders change due to crystallization of the lower layer, the obtained photosensitive body has stability and long life. Since the uppermost crystalline Se layer sensitivity to long wavelength light, it can be used for a lamp having long wavelength components, or laser beams used as an exposure light source.

Metallization means and method for high temperature applications

Abstract: Semiconductor devices with resistor regions, capable of operating at higher temperatures, and having improved bond pull strength are obtained by using a single layer (e.g. Ni--Cr) to act as a combined resistive layer and barrier layer. When placed in the contact windows between the semiconductor (e.g. Si) and the interconnect metallization, (e.g. Al) and Ni--Cr layer acts as a diffusion barrier to prevent interdiffusion of silicon and aluminum and contact alloying punch-through. When placed elsewhere on the device the Ni--Cr layer also serves as thin film resistor material. Wire bond pull strength is improved by placing an adhesion layer (e.g. polysilicon) beneath the portion of the resistive barrier layer underlying the bonding pads. The polysilicon layer rests on the insulator (e.g. SiO 2 ) covering the semiconductor substrate.

Superconductive integrated circuit incorporating a magnetically controlled interferometer

Abstract: Superconductive integrated logic gate circuits of the magnetically controlled type incorporating Josephson tunnel junctions utilize a superconductive layer that forms a base electrode for Josephson junction devices on the integrated circuit, a ground plane, and magnetic control lines. A layer of super-conductive material superposed on a barrier layer provides inductive loops connected to junction counterelectrodes and coupled to the magnetic control lines. By patterning the control lines in the same plane as the ground plane-base electrode layer, two layers, an insulating layer and a super-conductive layer, can be eliminated from the prior art structure of a 1:2:1 magnetically controlled logic gate interferometer. A preferred embodiment utilizing an all refractory superconductor-barrier-superconductor trilayer patterned by local anodization is also described. Processes for manufacturing the embodiments of the invention are disclosed.

Heat transfer pad decoration and substrates therefor

Abstract: A decorative laminate (5) and method of transferring designs onto article (60) The laminate is formed of a transfer substrate (7) affixed to a support member (10) The transfer substrate (7) is composed of a protective layer (40), an ink layer (30), and an adhesive/release layer (20) Optionally, a barrier layer (35) is provided between the resinous layer and the ink layer In many applications the protective coating layer may be omitted The laminate is applied to an article using a heated silicone rubber transfer pad (50) to which the transfer substrate adheres during the transfer process

High barrier shrink film

Abstract: There is provided a heat shrinkable, high barrier laminate film which includes a hot blown, melt oriented high oxygen barrier film, of relatively high crystallinity and correspondingly relatively low ultimate elongation, laminated to a stretch oriented base film having a shrink tension substantially greater than that of said barrier film, the extent of orientation of said base film being sufficient such that its ultimate elongation is reduced so as to be commensurate with that of said barrier film. In one preferred mode, the barrier film is a layflat tubular film having its interior layflat surfaces laminated together. Representatively, the high barrier layer of the barrier film is vinylidene chloride copolymer having at least about 85% by weight vinylidene chloride content, preferably at least about 90%. Associated methods for making the laminate films are also provided.

Package having oil-containing product

Abstract: An improved package, including an oil-containing product, includes a multiple layer packaging sheet material which is free from cockling. The multiple layer sheet material includes a layer which is susceptible to being swelled when in contact with oil, giving a cockled appearance. With reference to the package structure, the sheet material also includes an oil barrier layer between the oil-containing product and the layer which is susceptible to being swelled when in contact with oil. The barrier layer comprises either nylon or ethylene vinyl alcohol.

Effects of undercoats and overcoats on damage thresholds of 248 nm coatings

Abstract: Previous experiments have demonstrated that 1064 nm high reflectors benefit from the addition of halfwave silica overcoats, and that 1064 nm antireflection coatings can be improved by adding halfwave silica undercoats or barrier layers. In each case, a statistical improvement of about 50% has been observed. This paper reports similar results for coatings designed for 248 nm. The high reflectors were scandia/magnesium fluoride quaterwave stacks. Three design variations were tested: with no overcoat, with a halfwave silica overcoat, and with a halfwave magnesium fluoride overcoat. The presence of the overcoat more than doubled the threshold of the reflectors. The highest threshold, 8.5 joules/sq. cm, was measured on a reflector with a magnesium fluoride overcoat. Two material combinations were used for the four-layer antireflection coatings: scandia/silica and scandia/magnesium fluoride. Each of these combinations was coated without a barrier layer, with a silica barrier layer, and with a magnesium fluoride barrier layer. The barrier layer was an undercoat with a halfwave optical thickness. Varying degrees of improvement in thresholds, ranging up to 50%, were found in all cases with barrier layers. The highest thresholds exceeded 6 joules/sq. cm for scandia/silica coatings with silica barrier layers.

Method of forming coatings, coatings so formed and articles coated thereby

Abstract: A method of coating articles, a coating and a coated article wherein a bitumen primer layer is applied to a base sheet material and while the bitumen primer layer is still wet a layer of a barrier material of a consistency, composition and thickness is applied to the primer layer such that the bitumen primer layer does not bleed through the barrier layer and the barrier layer adheres to the bitumen primer layer. A coating of stone chips is then applied to the barrier layer in a manner such that the stone chips are partially embedded at least in the barrier layer so that the stone chips are held in position on curing of the bitumen primer and barrier layer but the stone chips are not completely covered by the barrier layer.

Photographic material with a temporary barrier layer comprising a chill-gelable polymer

Abstract: A polymer comprising polymerized N-alkyl substituted acrylamide and a polymerized crosslinking monomer wherein the polymer has a solubility parameter from about 13 to 16 at 25° C., is useful as a temporary barrier layer between reactants in photographic products. The barrier layer is particularly useful as a process timing layer in color image transfer film units.

Improved multilayer polyamide film

Abstract: Multilayer films comprising a barrier layer of a polyamide polymer, an outer layer of an olefin polymer and an intermediate adhesive layer of a carboxyl-modified ethylenic polymer are provided improved processability and improved interlayer adhesion by incorporating a carboxyl-modified ethylenic polymer into said polyamide barrier layer. Surprisingly, substantial proportions (e.g., up to about 40 weight percent based upon the weight of said barrier layer) of the carboxyl-modified ethylenic polymer can be incorporated into said polyamide polymer barrier layer without significantly reducing the oxygen barrier properties thereof.

Electrophotographic amorphous silicon member

Abstract: The invention disclosed relates to an electrophotographic sensitive member having a photoconductive layer of amorphous silicon. The photoconductive layer is preferably formed by the glow discharge process and includes about 10 -5 to 5×10 -2 atomic % of oxygen, about 10 to 40 atomic % of hydrogen and about 10 to 20000 ppm of a Group IIIb impurity of the Periodic Table. A barrier layer of amorphous silicon having a thickness of about 0.2 to 5 microns and containing about 0.05 to 1 atomic % of oxygen may also be formed between a substrate and said photoconductive layer.

ELECTROPHOTOGRAPHIC ELEMENTS HAVING BARRIER LAYERS OF CROSSLINKED POLYMERS OF ALIPHATIC OR AROMATIC MONOMERS CONTAINING .alpha.,.beta.-ETHYLENICALLY UNSATURATED CARBONYL-CONTAINING SUBSTITUENTS

Abstract: An electrophotographic element comprising a conductive layer, a photoconductive layer and a barrier layer between the conductive layer and the photoconductive layer characterized in that the barrier layer comprises a polymerized crosslinked monomer having an aliphatic or aromatic group comprising at least one α, β-ethylenically unsaturated carbonyl-containing substituent is disclosed.

Structure of submount for photo semiconductor element

Abstract: PURPOSE:To simplify the mounting process of an element in a submount as well as to realize the submount suitable for automatization by a method wherein the submount, which is used for mounting a chip of the light semiconductor element, is made of an electrical insulating material of pyrogenetic conductivity, more than one metalized patterns are provided on the surface thereof and a soldering pattern layer is further partially formed. CONSTITUTION:An Ni layer 56 is vacuum-evaporated on the back surface of a pyroconductive SiC ceramic substrate 51 to be used for a submount while the substrate 51 is being heated at temperatures of 400-500 deg.C and then the temperatures are lowered to about 200 deg.C for making an Au layer 57 coat, and a back-surface metalized layer is formed of these layers. Then, the substrate 51 is heated at 200-300 deg.C and a wiring layer 52 consisting of a Ti layer 61, an Mo layer 62 and an Au layer 63 is laminated for coating on the surface thereof. After that, the wiring layer 52 is made in the prescribed form and a laminated barrier layer 54 consisting of a Ti layer 64, an Mo layer 65 and an Au layer 66 is formed thereon. After then, a soldering pad 55 consisting of Pb and Sn is provided thereon and the substrate 51 is cut in the desired size. At this cutting time, the barrier layer 54 is a layer to be used for preventing an alloying reaction between the solder 55 and the Au layer 63.

Electrode structure for thin film transistor

Abstract: PURPOSE:To obtain a stabilized and high heat-resisting thin film transistor to be used for driving of a liquid crystal image indication device and the like, the characteristics of which will be unchanged even when a heat treatment is performed at 300 deg.C or thereabout after formation of the thin film transistor. CONSTITUTION:The N amorphous silicon 23, which forms the base of a source and drain electrode located on an N amorphous silicon 21, and the Al 22 which is electrode material are isolated by a high melting point metal 24, desirably such as Cr, Ta, W and the like, and they are not directly contacted with each other. Besides, 25 shown in the diagram is a gate electrode and 26 is an insulating film. As a result, these high melting point metals effectively function as a barrier layer which prevents Al from penetrating an N amorphous silicon layer when a heat treatment is performed at 300 deg.C or thereabout in the manufacturing process of an image indication device to be conducted after formation of the thin film transistor.

Submount for optical semiconductor element

Abstract: PURPOSE:To obtain the submount which withstands high temperature and high humidity by a method wherein the barrier layer to be provided on a wiring layer is constituted by Pt. CONSTITUTION:A wiring layer 41 is formed by performing a vacuum-deposition of Au layer 37, a Ti layer 38 and a Pt barrier main body layer 30 are successively vapor-deposited, and a barrier layer 41 is formed. Then, a solder layer- shaped window is provided on a resist layer 43. Subsequently, Pb-Sn solder 44 is vapor-deposited on the surface of the resist layer 43 in the state wherein a resist film is coated. Then, a sample is soaked in an organic solvent in which a photoresist film will be dissolved, supersonic vibrations are applied to the solvent, the resist film is removed by dissolution, and a solder layer 52 is selectively formed. Lastly, a heat conductive SiC ceramic substrate 31 is cut in accordance with the patterning pitc of the solder layer, and a submount 50 is manufacture. Then, after a semiconductor lase chip 53 has been die-conded on the solder layer 52, the submount is soldered on a heat dissipating member 56. Then, an Au wire 55 is supersonic die-bonded on the upper electrode 54. Also, an Au wire 57 is supersonic die-bonded on a barrier 42, and a chip lower electrode is connected to the outside part.

Color filter elements comprising hexaalkoxymethylmelamine barrier layers

Abstract: A color filter element comprising at least two differently colored sets of color arrays and having a barrier layer separating the sets to prevent color contamination between the sets is disclosed. The barrier layer is an optically clear polymerized, crosslinked hexaalkoxymethylmelamine monomer. The element is useful in color imaging devices.

Double active layer semiconductor laser

Abstract: A double active layer semiconductor laser having single longitudinal mode operation is described. The laser comprises first and second active layers which are separated from each other by an intermediate barrier layer but are optically coupled to each other so that, effectively, single mode operation results.

Inhibitor and barrier for use with high energy rocket propellants

Abstract: A flame inhibitor coating for application to those surfaces of a solid prllant grain in a rocket motor where burning is not desired such as the aft end of a perforated propellant grain which includes a barrier layer of a mixture of amine silane, a trialkoxypropylsilylamino prepolymer, and diglycidylether of polypropylene glycol, an epoxy applied to the grain surface and allowed to cure to a polysiloxane layer, and a flame inhibitor layer applied over the barrier layer consisting of a mixture of hydroxyl terminated polybutadiene and dimeryl diisocyanate with flake aluminum which is applied over the barrier layer and allowed to cure. The barrier layer prevents migration of nitrate esters from the solid propellant grain to the flame inhibitor layer thus preventing peeling and reduction of flame inhibiting properties. The polysiloxane barrier layer is also useful in itself as a flame inhibitor and can also be employed between the insulator/liner of the rocket motor and the solid propellant grain.

Coated ceramic substrates for mounting integrated circuits and methods of coating such substrates

Abstract: Coated ceramic substrates or structures having a barrier layer against alpha-particle radiation and integrated circuits prepared therefrom. Ceramic surfaces having reduced or modified surface roughness are also provided. As shown in the Figure the ceramic substrate is coated with a layer of high purity ceramic before the metallization layer is deposited. An electronic chip is then flip bonded to the coated substrate. In one example the coating is formed by applying droplets of a mix comprising a surfactant and a colloidal dispersion of alumina to the substrate, spinning the substrate and then drying the spun layer. Thereafter the ceramic is fired e.g. at 850°C for 15 minutes.

Semiconductor integrated circuits and method of manufacturing

Abstract: A film of titanium-tungsten-nitride is used to provide a fuse link between a semiconductive device and an interconnect line in a memory. In a preferred form this film provides the dual function of a fuse link and of a barrier layer between another conductive layer and, for example, a semiconductor region or a silicide layer.

Light sensitive semiconductor device for holding electrical charge therein

Abstract: In a semiconductor device intended to hold an electric charge due to being exposed to light, a photoconductive layer having a surface capable of being electrically charged is provided. A conductive base member is intended to support the photoconductive layer and permits the flow of electric charge therethrough. Between the photoconductive layer and the conductive base member, a first barrier layer and a second barrier layer are provided, the first barrier layer having a predetermined resistivity and being formed of a semiconductor serving to control the flow of an electric charge between the photoconductive layer and the conductive base member, and said second barrier layer having a resistivity which is higher than that of the first barrier layer and also being formed of a semiconductor serving to control the flow of an electric charge between the photoconductive layer and conductive base member. By the actions of the first and second barrier layers, it is possible to obtain a satisfactory percentage of charge holding.

Selective implantation of GaAs for MESFET applications

Abstract: A novel selective ion-implantation technique compatible with capless annealing is described. The process consists of coating the GaAs wafer with a thin layer of titanium over which photoresist can be applied and delineated several times for a number of selective implantation steps. The use of a titanium barrier layer avoids any contamination of the GaAs surface by ion-hardened photoresist. Depletion-mode MESFETs with selectively implanted channel and n+ contacts have been fabricated using this technique. Implantation through the titanium layer produced no degradation in pinch-off voltage uniformity over 2 in-diameter wafers.