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Barrier layer

About: Barrier layer is a research topic. Over the lifetime, 21843 publications have been published within this topic receiving 229167 citations.


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Journal ArticleDOI
TL;DR: In this paper, the experimental X-ray diffraction patterns are analyzed in terms of the kinematic approximation from which the strains being included in each layer can be quantitatively evaluated.

4 citations

Patent
26 Jun 1998
TL;DR: In this paper, the authors proposed a molecular beam epitaxial (MBE) method to prevent the steepness of composition difference at the boundary between a quantum well layer and a barrier layer from being lost by forming a superlattice structure layer by the MOVPE method and another semiconductor layer by MBE method.
Abstract: PROBLEM TO BE SOLVED: To prevent the steepness of composition difference at the boundary between a quantum well layer and a barrier layer from being lost by forming a superlattice structure layer by the MOVPE method and another semiconductor layer by the MBE method. SOLUTION: Since the molecular beam epitaxial(MBE) method can grow a semiconductor layer at a low temperature as compared with the metal organic compound vapor phase growth(MOVPE) method, a semiconductor layer can be formed at a temperature lower than the growing temperature of a superlattice structure layer by the MBE method on the superlattice structure layer after the superlattice structure layer is formed by the MOVPE method. When the growing temperatures of p-type clad layers 6 and 7 formed on a quantum well layer 5b and a barrier layer 5a are made lower than those of the layers 5b and 5a, the steepness of composition difference at the boundary between the layers 5b and 5a can be maintained even when the layers 5b and 5a undergo such a temperature hysteresis. Therefore, the light emitting efficiency of a GaN-based element is improved and the half value width of the spectrum of the output light of the element becomes smaller, resulting in the improved color purity of the element.

4 citations

Journal ArticleDOI
TL;DR: In this paper, the relative permittivity of the AlGaN barrier layer was found to be related to the piezoelectric and spontaneous polarization of the barrier layer, and the conclusion can be made that a moderate thermal stress can restrain the converse PDE effect and can improve the stability of AlgaN/GaN heterostructure devices.
Abstract: Ni Schottky contacts on AlGaN/GaN heterostructures were fabricated.Some samples were thermally treated in a furnace with N 2 ambience at 600 C for different times (0.5 h,4.5 h,10.5 h,18 h,33 h,48 h,and 72 h),the others were thermally treated for 0.5 h at different temperatures (500℃,600℃,700℃,and 800℃).With the measured current-voltage (I-V) and capacitance-voltage (C-V) curves and by self-consistently solving Schrodinger’s and Poisson’s equations,we found that the relative permittivity of the AlGaN barrier layer was related to the piezoelectric and the spontaneous polarization of the AlGaN barrier layer.The relative permittivity was in proportion to the strain of the AlGaN barrier layer.The relative permittivity and the strain reduced with the increased thermal stress time until the AlGaN barrier totally relaxed (after 18 h at 600℃ in the current study),and then the relative permittivity was almost a constant with the increased thermal stress time.When the sample was treated at 800℃ for 0.5 h,the relative permittivity was less than the constant due to the huge diffusion of the contact metal atoms.Considering the relation between the relative permittivity of the AlGaN barrier layer and the converse piezoelectric effect,the conclusion can be made that a moderate thermal stress can restrain the converse piezoelectric effect and can improve the stability of AlGaN/GaN heterostructure devices.

4 citations

Patent
29 Sep 2010
TL;DR: In this paper, a back sheet for a solar cell module consisting of two gas barrier films is provided, wherein the barrier layers face each other through the adhesive layer, and the adhesive layers are obtained by curing a two-liquid type polyurethane adhesive.
Abstract: A back sheet for a solar cell module excellent in barrier property and adhesiveness is provided. The back sheet for a solar cell module comprises two gas barrier films, wherein the gas barrier films each have a substrate film and a barrier layer comprising an inorganic layer comprising an inorganic oxide, an inorganic nitride or a mixture thereof on the substrate film, the outermost barrier layers each have an outermost surface having a surface roughness (Ra) of 0.1 to 3nm, the barrier layers face each other through the adhesive layer, and the adhesive layer is obtained by curing a two-liquid type polyurethane adhesive.

4 citations

Patent
01 Sep 2005
TL;DR: In this paper, a hillock-free aluminum metal layer and method of forming the same are provided, where a barrier aluminum layer is first formed on the substrate, and then an aluminum layer was formed over the barrier aluminium layer.
Abstract: A hillock-free aluminum metal layer and method of forming the same are provided. A barrier aluminum layer is first formed on the substrate, and then an aluminum layer is formed over the barrier aluminum layer. The thermal expansion coefficient (CTE) of the barrier aluminum layer is between the CTE of the substrate and the CTE of the aluminum layer (i.e. CTE sub. < CTE b. Al < CTE Al), so as to be a barrier layer for inhibiting the occurrence of hillocks. The electrical product manufactured according to the invention has a great reliability, and the manufacturing cost thereof is also decreased.

4 citations


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Performance
Metrics
No. of papers in the topic in previous years
YearPapers
202359
202297
2021255
2020752
20191,058
2018971