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Biasing

About: Biasing is a research topic. Over the lifetime, 29422 publications have been published within this topic receiving 301035 citations.


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Journal ArticleDOI
TL;DR: For CoFeB∕MgO-based magnetic tunnel junctions, the switching probability has an unusual dependence on bias voltage V and bias magnetic field H for bias voltage pulse durations t long enough to allow thermally activated reversal.
Abstract: For CoFeB∕MgO-based magnetic tunnel junctions, the switching probability has an unusual dependence on bias voltage V and bias magnetic field H for bias voltage pulse durations t long enough to allow thermally activated reversal. At high junction bias close to 1V, the probability of magnetic switching in spin-torque-driven switches sometimes appears to decrease. This is shown to be due to a backhopping behavior occurring at high bias, and it is asymmetric in bias voltage, being more pronounced in the bias direction for antiparallel-to-parallel spin-torque switch, i.e., in the direction of electrons tunneling into the free layer. This asymmetry hints at processes involving hot electrons within the free-layer nanomagnet.

76 citations

Journal ArticleDOI
TL;DR: In this article, the chromium nitride coatings have been deposited by the bipolar symmetric pulsed DC reactive magnetron sputtering process at different temperature and pulse substrate bias.
Abstract: The chromium nitride coatings have been deposited by the bipolar symmetric pulsed DC reactive magnetron sputtering process at different temperature and pulse substrate bias. The pulse frequencies of target power and the substrate bias were kept at 2 kHz and 50 kHz, respectively. The nanoindenter, scratch and Daimler-Benz Rockwell-C adhesion tests were adopted to evaluate the mechanical properties of the CrN coatings. The preferred orientation of the CrN coatings changed from (111) to (200) with increasing substrate temperature and negative bias voltage applied. The hardness and adhesion properties of the coatings also increased with substrate temperature and a − 290 V bias voltage. A CrN film with 21 GPa in hardness and good adhesion property was deposited at 300 °C and − 290 V bias. It is observed that through the bipolar symmetry pulsed DC reactive magnetron sputtering process, the CrN films with sufficient adhesion performance was achieved in this work.

76 citations

Journal ArticleDOI
TL;DR: In this paper, a modified bias scheme was adopted to improve the electrical endurance characteristics of conducting filamentary resistive switching (RS) in a Pt/TiO2/Pt RS cell.
Abstract: A modified biasing scheme was adopted to improve the electrical endurance characteristics of conducting filamentary resistive switching (RS) in a Pt/TiO2/Pt RS cell. The modified bias scheme included the application of bias voltages with alternating polarity, even though RS proceeds in non-polar mode, which results in the stable distribution of each resistance states as well as improved endurance. This was attributed to the minimized consumption of oxygen ions in the TiO2 film, which can be induced by the formation of hourglass-shaped conducting filament (HSCF). The presence of a HSCF was confirmed by high-resolution transmission electron microscopy.

76 citations

Journal ArticleDOI
Quansheng Ma1, Liuhe Li1, Ye Xu1, Jiabin Gu1, Lei Wang1, Yi Xu1 
TL;DR: In this article, the effect of substrate bias voltage on plasma discharge characterization of high power impulse magnetron sputtering (HiPIMS)-deposited TiAlSiN nanocomposite coatings was studied.

76 citations

Journal ArticleDOI
TL;DR: In this article, a spin-down conduction band in the Co ferrite has been interpreted as a tunneling via spin down conduction bands in order to achieve spin-filter efficiencies of 44% and 4.3% at 10 K and RT, respectively.
Abstract: Co ferrites fabricated by a thermal oxidation have been tested as a spin filter. Spin-filter efficiencies of 44% and 4.3% were confirmed at 10 K and RT, respectively, using a magnetic tunnel junction of Pt/CoFe2O4/MgO/Co. By increasing the bias voltage, the tunneling magnetoresistance (TMR) at 10 K increases then decreases. This is interpreted as a tunneling via spin-down conduction band in the Co ferrite. Since the electron at RT is attributed to a hopping conduction on the defect states in the Co ferrite, the reduction of the defects will be the key to achieving a higher spin-filter effect.

76 citations


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Performance
Metrics
No. of papers in the topic in previous years
YearPapers
2023256
2022488
2021480
2020923
2019946
2018977