Topic
Biasing
About: Biasing is a research topic. Over the lifetime, 29422 publications have been published within this topic receiving 301035 citations.
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TL;DR: In this paper, a model is presented to explain the bias voltage dependence of magnetic anisotropy in sputtered amorphous films of gadolinium cobalt alloys.
Abstract: A model will be presented to explain the bias voltage dependence of magnetic anisotropy in sputtered amorphous films of gadolinium cobalt alloys. It has been found that the magnetic anisotropy increases with bias voltage up to a critical bias voltage (∠150 V depending on the sputter gas) then decreases precipitously at higher voltages. The model used to explain this behavior is based on selective resputtering of atoms in different surface sites causing an anisotropic distribution of Gd and Co atoms with respect to the growth direction. For example, a Gd adatom in contact with three surface atom neighbors can have 0, 1, 2, or 3 cobalt neighbors. The sputtering threshold for each type of Gd adatom will be different so those with a low threshold will be selectively removed giving a structural anisotropy. This anisotropic atomic distributions can cause different kinds of anisotropy with respect to the growth direction depending on the type of amorphous film. For example, both easy‐axis (GdCo) and hard‐axis (G...
70 citations
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TL;DR: In this article, the main purpose of this work consists on the preparation of single layered zirconium oxynitride, ZrN x O y, thin films, deposited by rf reactive magnetron sputtering.
70 citations
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22 Oct 1999TL;DR: In this paper, a nonvolatile storage circuit can include a volatile portion that includes p-channel metal-oxide-semiconductor (MOS) transistors and n-channel MOS transistors arranged in a complementary MOS (CMOS) latch configuration.
Abstract: According to one embodiment, a nonvolatile storage circuit ( 100 ) can include a volatile portion ( 102 ) that includes p-channel metal-oxide-semiconductor (MOS) transistors ( 106 - 0 and 106 - 1 ) and n-channel MOS (NMOS) transistors ( 108 - 0 and 108 - 1 ) arranged in a complementary MOS (CMOS) latch configuration. Also included are nonvolatile devices ( 116 - 0 and 116 - 1 ) disposed between PMOS transistor 106 - 0 and NMOS transistor 108 - 0 , and between PMOS transistor 106 - 1 and NMOS transistor 108 - 1 . Nonvolatile devices ( 116 - 0 and 116 - 1 ) can include silicon-oxide-nitride-semiconductor (SONOS) transistors that can be programmed to opposite states to recall a logic value when power is applied to the nonvolatile storage circuit ( 100 ). In a read mode, a bias voltage VBIAS can be applied to nonvolatile devices ( 116 - 0 and 116 - 1 ) that tends to retain charge in both nonvolatile devices ( 116 - 0 and 116 - 1 ).
70 citations
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TL;DR: In this article, the design of very small ac transconductance voltage to current transducers for low frequency continuous-time filters, very large resistors and other applications is discussed.
Abstract: This paper deals with the design of very small ac transconductance voltage to current transducers intended for the design of low frequency continuous-time filters, very large resistors and other applications. The first type of Operational Transconductance Amplifiers (OTA) is based on a triode biased transistor and a current division technique. The second one uses partial positive feedback which allows to reduce transistor dimensions but the sensitivity to transistor mismatches increases. The proposed techniques can be used for the design of high-order low frequency IC filters, ladder or based on biquads, with moderated transistor dimensions while the dynamic range-cutoff frequency performance is comparable to previously reported structures. A 10 Hz third order lowpass ladder filter has been designed with these techniques, and it shows a dynamic range of 62 dB. Besides, a novel biasing technique for capacitive sources coupled preamplifiers is proposed. Experimental results for a prototype, fabricated in a 1.2 μm CMOS process, have shown very low distortion components (THD< 1 level below 15 μ V_RMS and dynamic range of 63 dB. The power consumption is only 10 μwatts and the supply voltages are ± 1.5 volts.
70 citations
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TL;DR: It is demonstrated that the phase transition of VO2 film is closely associated with the carrier distribution within the space charge region, which can be directly controlled by the bias voltage.
Abstract: External controlling the phase transition behavior of vanadium dioxide is important to realize its practical applications as energy-efficient electronic devices. Because of its relatively high phase transition temperature of 68 degrees C, the central challenge for VO2-based electronics, lies in finding an energy efficient way, to modulate the phase transition in a reversible and reproducible manner. In this work, we report an experimental realization of p-n heterojunctions by growing VO2 film on p-type GaN substrate. By adding the bias voltage on the p-n junction, the metal-insulator transition behavior of VO2 film can be changed continuously. It is demonstrated that the phase transition of VO2 film is closely associated with the carrier distribution within the space charge region, which can be directly controlled by the bias voltage. Our findings offer novel opportunities for modulating the phase transition of VO2 film in a reversible way as well as extending the concept of electric-field modulation on other phase transition materials.
70 citations