Topic
Biasing
About: Biasing is a research topic. Over the lifetime, 29422 publications have been published within this topic receiving 301035 citations.
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TL;DR: In this article, the multiple ZnO nanowires field effect transistors (FETs) were formed by assembling as-synthesized ZnOs on a SiO2/Si substrate using an optimized alternating current dielectrophoresis (DEP) technique in three-probe back-gate geometry.
Abstract: We report on the multiple ZnO nanowires field-effect transistors (FETs), which were formed by assembling as-synthesized ZnO nanowires on a SiO2/Si substrate using an optimized alternating current (AC) dielectrophoresis (DEP) technique in three-probe back-gate geometry. The AC DEP was optimized with a bias voltage of 10 Vp-p at a frequency of 10 kHz. Our multiple ZnO nanowires FETs containing ca. 50∼65 nanowires in one device exhibited excellent electrical characteristics with a transconductance of 3∼11.5 μS at a drain voltage of 1∼5 V, a mobility of ∼30 cm2/V·s, and a carrier concentration of 9.4 × 1017 cm-3. For a comparison study, we also present conventional single ZnO nanowire FETs prepared by e-beam lithography with a back-gate structure.
69 citations
TL;DR: It is suggested that, in addition to the chemical reaction, the electric field in the vacuum gap plays a significant role in the operation of a gap-type atomic switch.
Abstract: The switching time of a Cu2S-based gap-type atomic switch is investigated as a function of temperature, bias voltage, and initial off-resistance. The gap-type atomic switch is realized using a scanning tunneling microscope (STM), in which the formation and annihilation of a Cu-atom bridge in the vacuum gap between the Cu2S electrode and the Pt tip of the STM are controlled by a solid-electrochemical reaction. Increasing the temperature decreases the switching time exponentially with an activation energy of about 1.38?eV. Increasing the bias voltage also shortens the switching time exponentially, exhibiting a greater exponent for the lower bias than for the higher bias. Furthermore, faster switching has been achieved by decreasing the initial off-resistance between the Cu2S electrode and STM tip. On the basis of these results, we suggest that, in addition to the chemical reaction, the electric field in the vacuum gap plays a significant role in the operation of a gap-type atomic switch. This investigation advances our understanding of the operating mechanism of an atomic switch, which is a new concept for future electronic devices.
69 citations
Patent•
22 Jun 2000
TL;DR: In this article, a charge trapping structure for use with an n-channel metal-insulator-semiconductor field effect transistor (MISFET) is disclosed, where a dielectric layer is formed close to a channel region of the MISFET, and includes a number of trapping sites which are arranged and have a concentration sufficient to temporarily store energetic electrons induced by an electric field to move from the channel into the trapping sites.
Abstract: A charge trapping structure for use with an n-channel metal-insulator-semiconductor field-effect transistor (MISFET) is disclosed. A dielectric layer is formed close to a channel region of the MISFET, and includes a number of trapping sites which are arranged and have a concentration sufficient to temporarily store energetic electrons induced by an electric field to move from the channel into the trapping sites. The trapped electrons set up a counter field that depletes the channel of carriers, and as a bias voltage across the channel increases, the device exhibits negative differential resistance (NDR). The charge trapping structure, as well as the rest of the device, are formed using conventional CMOS processing techniques.
69 citations
TL;DR: In this paper, the effects of negative bias voltage and RF power on structural and optical properties of un-doped and aluminium-doping zinc oxide (ZnO:Al) thin films were investigated.
69 citations
TL;DR: In this article, the anomalous sub-threshold behavior of n-channel silicon-on-insulator (SOI) MOSFETs is attributed analytically to the (floating) body effect due to charging (biasing) by impact ionization at the drain.
Abstract: The abnormally high slopes of the subthreshold current-voltage characteristics exhibited by n-channel silicon-on-insulator (SOI) MOSFET's are experimentally related to defect density (off-state leakage current) as well as drain voltage and channel length, and a theoretical physical description of the measured relations is presented and supported. The anomalous subthreshold behavior is attributed analytically to the (floating) body effect due to charging (biasing) by impact ionization at the drain.
69 citations