Biasing

About: Biasing is a research topic. Over the lifetime, 29422 publications have been published within this topic receiving 301035 citations.

Tunable pure spin currents in a triple-quantum-dot ring

Abstract: Electronic transport through a triple-quantum-dot ring with three terminals is theoretically studied. By introducing local Rashba spin-orbit interaction on an individual quantum dot, we calculate the charge and spin currents in one lead. We find that a pure spin current without an accompanying charge current appears even at zero magnetic field case. The polarization direction of the spin current can be inverted by altering the bias voltage. In addition, by tuning the magnetic field strength, the charge and spin currents reach their respective peaks alternately.

A 950 MHz rectifier circuit for sensor networks with 10 m-distance

Abstract: A high-sensitivity rectifier is fabricated in a 0.3 /spl mu/m CMOS technology. The circuit can rectify an RF signal less than the NMOS threshold voltage by using a bias voltage between the gate and the drain terminals of a transistor. The IC achieves a 950 MHz signal rectification over -14 dBm corresponding to 10 m-distance communication and recharges a 1.2 V secondary battery.

Electrically driven quantum dot single-photon source at 2 GHz excitation repetition rate with ultra-low emission time jitter

Abstract: The influence of the bias voltage on emission properties of a red emitting InP/GaInP quantum dot based single-photon source was investigated. Under pulsed electrical excitation, we can influence the band bending of the p-i-n diode with the applied bias voltage and thus the charge carrier escape by quantum tunneling. This leads to control over the non-radiative decay channel and allows carrier escape times as low as 40 ps, effectively reducing the time jitter of the photon emission. We realized high excitation repetition rates of up to 2 GHz while autocorrelation measurements with g(2)(0)-values of 0.27 attest dominant single-photon emission.

Structure of deposited and annealed TiB2 layers

Abstract: TiB 2 coatings were prepared on steel and silicon substrates by dc magnetron sputtering at different bias voltages After deposition part of the coatings was vacuum annealed at 400 °C and 800 °C Transmission elctron microscopic (TEM) investigations on cross-section-prepared specimens showed that the layers were nanocrystalline with an average diameter of columnar grains between 50 and 20 nm depending on bias voltage The chemical composition of coatings was homogeneous within the layers and independent of bias A non-stoichiometric B:Ti ratio was detectable and a high amount of Ar incorporation occurred X-Ray phase analysis showed that the coatings consisted mainly of hexagonal TiB 2 phase with strong (001) fibre texture Moreover, high compressive stresses were measured which could be attributed to Ar incorporation The microhardness, critical load and failure mode were influenced by high compressive residual stresses After annealing at 400 °C the residual stresses were relaxed and the critical load was independent of bias voltage After annealing at 800 °C an upwelling of the surface was observed connected with crack formations and the occurrence of three new phases

Magnetoelectric Effect in Graphene Nanoribbons on Substrates via Electric Bias Control of Exchange Splitting

Abstract: We predict a magnetoelectric (ME) effect in graphene nanoribbons on silicon substrates by first-principles calculations. It is shown that a bias voltage can produce strong linear ME effect by driving charge transfer between the nanoribbons and substrate, thus tuning the exchange splitting of magnetic edge states; moreover, the bias induced n-to-p-type transition in the ribbon layer can switch the ME coefficient from negative to positive due to the unique symmetry of band structures. This mechanism is proven to be robust against variations in material and physical configurations, thus opening a new avenue for ME coupling in metal-free magnet systems of practical importance.