Topic
Biasing
About: Biasing is a research topic. Over the lifetime, 29422 publications have been published within this topic receiving 301035 citations.
Papers published on a yearly basis
Papers
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IBM1
TL;DR: In this article, a low noise, low power, low voltage amplifier circuits with a single ended input having no common mode rejection for concurrently biasing and amplifying signals generated by magnetoresistive (MR) elements in a disk file are presented.
Abstract: Low noise, low power, low voltage amplifier circuits with a single ended input having no common mode rejection for concurrently biasing and amplifying signals generated by magnetoresistive (MR) elements in a disk file. The amplifier circuits comprise a single (grounded) supply voltage source. One terminal of each MR element and the conductive substrate of each MR element and the conductive substrate of each disk in the disk file are grounded to minimize transient conductive asperity currents. The head/disk assembly of the disk file is completely enclosed by a highly conductive electrostatically shielded metallic enclosure that operates as a Faraday cage and isolates leads connecting the MR elements with the amplifier circuit from large, fast rise/fall time voltage transients.
65 citations
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NEC1
TL;DR: In this paper, an output level control circuit for radio-frequency transmitter which intermittently transmits radiofrequency carrier waves such as seen in the TDMA radio communication system and the digital cellular mobile telephone system is presented.
Abstract: An output level control circuit for radio-frequency transmitter which intermittently transmits radio-frequency carrier waves such as seen in the TDMA radio communication system and the digital cellular mobile telephone system. The variable gain amplifier unit of this transmitter amplifies the transmitting signal to a predetermined output power level in response to a control signal, the output power level is detected by a detecting diode which receives the application of a temperature-compensated bias voltage, and the sum of the detected output and the bias voltage becomes the detection output to the control loop. The bias voltage of the detecting diode is stored by bias voltage detection circuit during the off-period of the transmitting signal, an input reference voltage that is supplied in synchronism with the turning-on of the transmitting signal and the stored bias voltage are added by reference signal addition circuit, and the added output is served as the reference voltage that corresponds to the predetermined output power level. A power control circuit generates the control signal in response to the added output and the detection output, and the control signal controls the output power level of the variable gain amplifier unit.
65 citations
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30 Jun 1997TL;DR: In this paper, a quadrature mixer architecture that mixes the in-phase and quad-rature phases within the same cell is presented, where the base of a voltage conversion transistor converts the input voltage into a bias current on the collector of the voltage converter transistor.
Abstract: A quadrature mixer architecture that mixes the in-phase and quadrature phases within the same cell. The input voltage is applied to the base of a voltage conversion transistor, which converts the input voltage into a bias current on the collector of the voltage conversion transistor. Four mixer transistors have their emitters connected to the collector of the drive transistor so as to receive the bias current. The bases of a first pair of the upper transistors are fed with the in-phase components (e.g., 0 and 180°), while the bases of the other pair of transistors are fed with the quadrature phase components (e.g., 90 and -90° of a local oscillator). The collectors of the mixer transistors are taken as the four output components of the circuit, I out , I out .sbsb.--, Q out , and Q out .sbsb.--.
65 citations
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TL;DR: In this paper, the effect of substrate negative bias voltages on the impact property of CrAlN coatings was studied and the results showed that with increasing substrate bias voltage the coatings became more compact and denser, and the microhardness and fracture toughness increased correspondingly.
65 citations
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TL;DR: In this article, the fabrication and operation of a 1μm × 1.μm gated GaAs/(AlGa)As resonant tunnelling diode is described.
Abstract: The fabrication and operation of a 1μm × 1μm gated GaAs/(AlGa)As resonant tunnelling diode is described. By biasing the gate the I/V characteristic can be varied and hence the negative differential resistance of the diode can be controlled. Using a wafer with an appropriate doping profile ensures that the maximum depletion due to the gate will occur close to the (AlGa)As tunnel barriers. When a large negative bias is applied to the gate extra structure develops in the I/V characteristic which may be related to the modification of the sub-band structure in the well due to the lateral quantum confinement of electrons by the gate. The potential of this fabrication technique is also discussed for resonant tunnelling and vertical field effect transistors.
65 citations