Topic
Biasing
About: Biasing is a research topic. Over the lifetime, 29422 publications have been published within this topic receiving 301035 citations.
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TL;DR: In this paper, a modified mesa structure of high-Tc superconducting Bi2Sr2CaCu2O8+δ with a thin underlaying base superconductor (∼3 μm), the effective working temperature of the continuous and monochromatic terahertz emitter is extended up to 70
Abstract: Using a modified mesa structure of high-Tc superconducting Bi2Sr2CaCu2O8+δ with a thin underlaying base superconductor (∼3 μm), the effective working temperature of the continuous and monochromatic terahertz emitter is extended up to 70 K, and the maximum power of ∼30 μW at 0.44 THz is achieved at the relatively high temperature of Tb = 55 K in a low bias current retrapping region. The diverging behavior of the intensity occurring at 55 K in the low current regime without hot spot formation may provide us an important clue for the stronger THz radiation from intrinsic Josephson junction devices.
64 citations
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30 Aug 1979TL;DR: In this paper, a singly-balanced active mixer circuit is proposed for developing an IF signal by combining an RF signal and a local oscillator (LO) signal, which is applied to a strip transmission line ring which provides balanced components of the LO signal to a pair of active devices arranged in an singly balanced active mixer.
Abstract: A singly-balanced active mixer circuit is disclosed for developing an IF signal by combining an RF signal and a local oscillator (LO) signal. The RF and LO signals are applied to a strip transmission line ring which provides balanced components of the LO signal to a pair of active devices arranged in an singly-balanced active mixer. The active devices are coupled directly, or via a balanced PI-network to the primary winding of an output transformer for application to the following IF stage of the radio receiver. DC biasing of the active devices is provided via a floating tap on the primary winding of the output transformer which is not bypassed at the input, LO and IF frequencies. The singly balanced active mixer circuit may be advantageously utilized in a radio having a receiver with broadband front-end RF selectivity.
64 citations
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10 Feb 2003TL;DR: An integrated magnetic field sensing device includes at least two magnetoresistive elements which are biased in a first direction by an integral conductor and are sensitive to magnetic field components in a direction perpendicular to the first direction as mentioned in this paper.
Abstract: An integrated magnetic field sensing device includes at least two magnetoresistive elements which are biased in a first direction by an integral conductor and are sensitive to magnetic field components in a direction perpendicular to the first direction. The sensitivity of the device to a magnetic field is adjustable and is related to the level of the bias current. In a current measuring application, two of the magnetic field sensing devices are mounted on opposite sides of an perpendicular to a conductor carrying a current to be measured. In a portable current measuring apparatus, two of the magnetic field sensors are mounted in a housing that assists in locating the magnetic field sensors relative to the conductor carrying the current to be measured.
64 citations
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TL;DR: In this paper, the characteristics of MOST devices have been studied at 4°K and some types of device were found to be suitable for use in cryogenic amplifiers giving a variation of only 1 2 dB in gain over the audio frequency range.
Abstract: Characteristics of MOST devices have been studied at 4°K and some types of device were found to be suitable for use in cryogenic amplifiers giving a variation of only 1 2 dB in gain over the audio frequency range. Capacitance measurements at room temperature enabled severe non-ohmic effects observed in some devices to be attributed to lack of gate overlap. Substrate biasing experiments showed that hysteresis effects observed in other devices were the result of a trapping process. Measurement of a.c. parameters with change of frequency showed that transconductance and channel conductance increased with frequency in devices where severe hysteresis was observed and could be attributed to hoping conductivity. Pulse measurements showed that overheating of all or part of the device was in some cases causing failure to saturate.
64 citations
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TL;DR: In this article, a transition from thermionic emission at a high temperature to tunneling at a low temperature was demonstrated in a field effect transistor (FET) device, and the transition from one mechanism to another between a metal electrode and MoS2 channel interface in a FET was illustrated.
Abstract: This study illustrates the nature of electronic transport and its transition from one mechanism to another between a metal electrode and MoS2 channel interface in a field effect transistor (FET) device. Interestingly, measurements of the contact resistance (Rc) as a function of temperature indicate a transition in the carrier transport across the energy barrier from thermionic emission at a high temperature to tunneling at a low temperature. Furthermore, at a low temperature, the nature of the tunneling behavior is ascertained by the current–voltage dependency that helps us feature direct tunneling at a low bias and Fowler–Nordheim tunneling at a high bias for a Pd–MoS2 contact due to the effective barrier shape modulation by biasing. In contrast, only direct tunneling is observed for a Cr–MoS2 contact over the entire applied bias range. In addition, simple analytical calculations were carried out to extract Rc at the gating range, and the results are consistent with the experimental data. Our results describe the transition in carrier transport mechanisms across a metal–MoS2 interface, and this information provides guidance for the design of future flexible, transparent electronic devices based on 2-dimensional materials.
64 citations