Biasing

About: Biasing is a research topic. Over the lifetime, 29422 publications have been published within this topic receiving 301035 citations.

Control of the ion flux and ion energy in CCP discharges using non-sinusoidal voltage waveforms

Abstract: Using particle-in-cell simulations we perform a characterization of the ion flux and ion energy in a capacitively coupled rf plasma reactor excited with non-sinusoidal voltage waveforms. The waveforms used are positive Gaussian type pulses (with a repetition frequency of 13.56?MHz), and as the pulse width is decreased, three main effects are identified that are not present in typical symmetric sinusoidal discharges: (1) the ion flux (and plasma density) rapidly increases, (2) as the pressure increases a significant asymmetry in the ion fluxes to the powered and grounded electrodes develops and (3) the average ion energy on the grounded electrode cannot be made arbitrarily small, but in fact remains essentially constant (together with the bias voltage) for the pressures investigated (20?500?mTorr). Effects (1) and (3) potentially offer a new form of control in these types of rf discharges, where the ion flux can be increased while keeping the average ion energy on the grounded electrode constant. This is in contrast with the opposite control mechanism recently identified in Donk? et al (2009 J. Phys. D: Appl. Phys. 42 025205), where by changing the phase angle between applied voltage harmonics the ion flux can be kept constant while the ion energy (and bias voltage) varies.

Back-hopping after spin torque transfer induced magnetization switching in magnetic tunneling junction cells

Abstract: In some cases such as junctions with low magnetic thermal activation energy, the magnetization of the free layer in MgO-based magnetic tunnel junctions (MTJs) can back hop to its original direction after successful spin torque induced switching. The back-hopping is observed in both current directions corresponding to parallel-to-antiparallel and antiparallel-to-parallel switchings. For bias voltage pulses with increasing pulse width, the threshold voltage for back-hopping appears to decrease together with spin-torque switching and junction breakdown thresholds, but its rate of decrease is less. Increasing the anisotropy field Hk by increasing the MTJ aspect ratio can raise the threshold voltage of back-hopping significantly.

Amplifier circuits, methods of starting and stopping amplifier circuits

Abstract: An amplifier circuit (100) has an input stage (OP1) and an output stage (Ql, Q2) operating with different supply voltages and different quiescent voltages. The output stage has a feedback input connected to receive a feedback signal from the output of the output stage. A biasing circuit (602) applies a bias signal (Ioff) to said input stage at an operating level appropriate to establish a quiescent output voltage different from a ground reference level of the input stage. To start up the amplifier with minimal transients at the output, the following steps are performed in sequence: (a) with the output stage disabled, pre-charging the amplifier output over a period of time to a level (Vmid) corresponding to the ground reference level of the input stage; (b) with the biasing circuit effectively disabled and a zero input signal at said signal input, enabling the input and output stages; (c) activating said biasing circuit progressively so as to ramp said bias signal (Ioff) to said operating level over a further period of time, thereby driving the output progressively to said quiescent output voltage. A separate improvement is in the biasing circuit, which uses the actual output stage supply voltage (PVdd) as a reference to define the operating level of said bias signal (Ioft).

Robustness of Spin Polarization in Graphene‐Based Spin Valves

Abstract: The decrease of spin polarization in spintronics devices under the application of a bias voltage is one of a number of currently important problems that should be solved. Here, an unprecedented robustness of the spin polarization in multilayer-graphene spin valves at room temperature is revealed. Surprisingly, the spin polarization of injected spins is constant up to a bias voltage of +2.7 V and −0.6 V in positive- and negative-bias voltage applications at room temperature, respectively, which is superior to all spintronics devices. This finding is induced by suppression of spin scattering due to an ideal-interface formation. Furthermore, an important accordance between theory and experiment in molecular spintronics is found by observing the fact that the signal intensity in a local scheme is double that in a nonlocal scheme, as theory predicts, which provides construction of a steadfast physical basis in this field.