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Biasing

About: Biasing is a research topic. Over the lifetime, 29422 publications have been published within this topic receiving 301035 citations.


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Journal ArticleDOI
TL;DR: In this paper, the authors proposed a new type of far-infrared detector with promising applications for heterodyne detection at wavelengths on the order of 300 μm, which can be used to excite these electrons into the conduction band, giving a photoconductive signal.
Abstract: Shallow donor impurities in silicon at low temperatures are able to bind two electrons, forming negative donor ions, analogous to atomic H− ions. The second electron has a binding energy of only a few meV. Far‐infrared radiation can be used to excite these electrons into the conduction band, giving a photoconductive signal. This mechanism is the basis of a new type of far‐infrared detector, with promising applications for heterodyne detection at wavelengths on the order of 300 μm. The nature of the negative donor ion is discussed, in part from the effective mass analogy with H− atomic ions, and also with H−2 molecular ions. The theory of how this detector will perform as a function of such variables as bias voltage, background intensity, signal level, and signal speed has been examined. Response speeds on the order of 1 nsec are expected, for operation at temperatures ?2 K, with bias voltage as high as 100 V/cm. With unfiltered 300‐K background radiation, the NEP is estimated to be on the order of 10−11 W...

61 citations

Journal ArticleDOI
TL;DR: In this paper, an analytical model for the interpretation of transport measurements on spatially inhomogeneous Schottky contacts is presented, where the authors compare barriers from current/voltage curves as well as from capacitance and voltage curves.
Abstract: We review an analytical model for the interpretation of transport measurements on spatially inhomogeneous Schottky contacts. The comparison of barriers from current/voltage- as well as from capacitance/voltage-curves permits a quantitative analysis of spatially distributed Schottky barriers. We reveal that the ideality coefficient n of abrupt Schottky contacts reflects the deformation of the barrier distribution under applied bias; a general temperature dependence for the ideality n is predicted and observed. An extension of our model includes the so-called flat band barrier of current/voltage curves. Here we demonstrate the interdependence of flat band Schottky barrier, ideality n and the homogenization of the barrier distribution under the application of a bias voltage. Effective photoresponse barriers and electrical noise at inhomogeneous Schottky diodes are also discussed.

60 citations

Journal ArticleDOI
TL;DR: In this paper, a low-distortion class AB output stage with improved stability suitable for monolithic power amplifiers (P/sub 0/>or=40 W) is described.
Abstract: A low-distortion class AB output stage with improved stability suitable for monolithic power amplifiers (P/sub 0/>or=40 W) is described. The concept has been verified on a 12-W breadboard version as well as on a partly integrated prototype, and is supported by computer simulations for P/sub 0/>or=40 W A biasing control law which guarantees predictable conduction of both output transistors at all times is implemented. This reduces crossover distortion and allows the customary quasi-p-n-p compound transistor to be eliminated, thus also improving stability. Linearity is improved by use of local negative feedback. Phase margin is improved by application of high-frequency feedforward. Measured phase margin is around 60 degrees and total harmonic distortion for a load of 7 Omega is about -80 dB at 20 kHz. >

60 citations

Journal ArticleDOI
TL;DR: In this article, a buffered gate modulation input (BGMI) circuit was proposed to achieve high charge sensitivity with adaptive current gain control and good immunity from threshold-voltage variations.
Abstract: A new CMOS current readout structure for the infrared (IR) focal-plane-array (FPA), called the buffered gate modulation input (BGMI) circuit, is proposed in this paper. Using the technique of unbalanced current mirror, the new BGMI circuit can achieve high charge sensitivity with adaptive current gain control and good immunity from threshold-voltage variations. Moreover, the readout dynamic range can be significantly increased by using the threshold-voltage-independent current-mode background suppression technique. To further improve the readout performance, switch current integration techniques, shared-buffer biasing technique, and dynamic charging output stage with the correlated double sampling circuit are also incorporated into the BGMI circuit. An experimental 128/spl times/128 BGMI readout chip has been designed and fabricated in 0.8 /spl mu/m double-poly-double-metal (DPDM) n-well CMOS technology. The measurement results of the fabricated readout chip under 77 K and 5 V supply voltage have successfully verified both readout function and performance improvement. The fabricated chip has the maximum charge capacity of 9.5/spl times/10/sup 7/ electrons, the transimpedance of 2.5/spl times/10/sup 9/ /spl Omega/ at 10 nA background current, and the arrive power dissipation of 40 mW. The uniformity of background suppression currents can be as high as 99%. Thus, high injection efficiency, high charge sensitivity, large dynamic range, large storage capacity, and low noise can be achieved In the BGMI circuit with the pixel size of 50/spl times/50 /spl mu/m/sup 2/. These advantageous characteristics make the BCMI circuit suitable for various IR FPA readout applications with a wide range of background currents.

60 citations

Patent
18 Dec 1992
TL;DR: In this paper, a method and apparatus for enhancing the nucleation of diamond by pretreating a substrate by electrically biasing a diamond film adjacent the substrate while exposing the substrate and the thus biased diamond film to a carbon-containing plasma is presented.
Abstract: A method and apparatus for enhancing the nucleation of diamond by pretreating a substrate by electrically biasing a diamond film adjacent the substrate while exposing the substrate and the thus biased diamond film to a carbon-containing plasma The bias pretreatment may be maintained for a time period in the range of about 1 hour to 2 hours to achieve a high diamond nucleation density Alternatively, the biasing may be continued until diamond film formation is indicated by a change in reflectivity of the surface of the substrate The biasing pretreating may be used to nucleate diamond heteroepitaxially on a substrate having a surface film formed of a material having a relatively close lattice match to diamond, such as β-silicon carbide The apparatus includes a laser reflection interferometer to monitor the surface of the substrate The laser reflection interferometer is used to monitor growth of the diamond film and cooperates with a controller to control the processing parameters during the diamond growing process

60 citations


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Performance
Metrics
No. of papers in the topic in previous years
YearPapers
2023256
2022488
2021480
2020923
2019946
2018977