Topic
Biasing
About: Biasing is a research topic. Over the lifetime, 29422 publications have been published within this topic receiving 301035 citations.
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TL;DR: It is shown that operating bias condition has a significant role in device reliability by altering value and location of the peak temperature, which then alters the type and rate of thermally induced degradation taking place at critical locations such as the drain side corner of the gate.
58 citations
TL;DR: In this article, the emergence of quantized conductance states and their correlation with resistive switching characteristics in polymer-based atomic switches are investigated using combinations of currentvoltage measurements and first-principles density functional theory (DFT) simulations.
Abstract: A detailed understanding of the conductance quantization and resistive switching phenomena in redox-based memories is crucial for realizing atomic-scale memory devices and for finding the adequate design principles on which they can be based. Here, the emergence of quantized conductance states and their correlation with resistive switching characteristics in polymer-based atomic switches are investigated using combinations of current–voltage measurements and first-principles density functional theory (DFT) simulations. Various conductance states, including integer and half-integer multiples of a single atomic point contact and fractional conductance variations, are observed in an Ag/polyethylene oxide/Pt device under sweeping of bias voltage. Moreover, highly controllable and reproducible quantized conductance behaviors by tuning the voltage sweep rate and the sweep voltage range, suggesting well-controlled formation of the atomic point contact, are demonstrated. The device also exhibits longer retention times for higher conductance states. The DFT simulations reveal the transmission eigenstate of geometrically optimized atomic point contact structures and the impact of the atomic configurations and structural stability on the conductance state, which also explains their resistive switching behaviors. The well-defined, multiple quantized conductance states observed in these polymer-based atomic switches show promise for the development of new multilevel memory devices.
58 citations
TL;DR: In this paper, the structure and mechanical properties of the multilayers of hard and soft amorphous carbon films were investigated by transmission electron microscopy and nanoindentation.
Abstract: Filtered cathodic arc deposition is an effective technique for preparing amorphous hard carbon films of high quality Pulsed biasing of the substrate leads to a variation of the ion energy Therefore the film properties, which are influenced by the ion energy, can be changed over a wide range Using an alternating high- and low-bias voltage, we have formed multilayers of hard and soft amorphous carbon films The structure and mechanical properties of the multilayers were investigated by transmission electron microscopy and nanoindentation They are discussed in relation to Monte Carlo computer simulations of the deposition process It was found that the multilayer structure formation can be well predicted by the Monte Carlo computer code
58 citations
TL;DR: In this paper, a portable x-ray generator for imaging of low-atomic number materials such as biological soft tissue is presented, which uses a self-aligned, gated, Pt-coated silicon field emitter cathode with two arrays of 62 500 nano-sharp tips arranged in a square grid with 10 μm emitter pitch, and a natural convection-cooled reflection anode composed of a Cu bar coated with a thin Mo film.
Abstract: We report the design, fabrication, and characterization of a portable x-ray generator for imaging of low-atomic number materials such as biological soft tissue. The system uses a self-aligned, gated, Pt-coated silicon field emitter cathode with two arrays of 62 500 nano-sharp tips arranged in a square grid with 10 μm emitter pitch, and a natural convection-cooled reflection anode composed of a Cu bar coated with a thin Mo film. Characterization of the field emitter array demonstrated continuous emission of 1 mA electron current (16 mA cm − 2) with >95% current transmission at a 150 V gate-emitter bias voltage for over 20 h with no degradation. The emission of the x-ray source was characterized across a range of anode bias voltages to maximize the fraction of photons from the characteristic K-shell peaks of the Mo film to produce a quasi-monochromatic photon beam, which enables capturing high-contrast images of low-atomic number materials. The x-ray source operating at the optimum anode bias voltage, i.e. 35 kV, was used to image ex vivo and nonorganic samples in x-ray fluoroscopic mode while varying the tube current; the images resolve feature sizes as small as ~160 µm.
58 citations
01 Dec 2014
TL;DR: In this article, the tensile strain in Si-channels can enhance the tunneling current because of the reduced effective energy bandgap, and Nitrogen heat-treatment can improve the gate-to-channel MIS interface which causes SS improvement.
Abstract: High performance operation of Ge-source/strained-Si-channel hetero-junction tunnel FETs is demonstrated. It is found that tensile strain in Si-channels can enhance the tunneling current because of the reduced effective energy bandgap, E g.eff . Nitrogen heat-treatment can improve the gate-to-channel MIS interface which causes SS improvement. The fabricated Ge/sSOI(1.1 %) tunnel FETs show high I on /I off ratio over 107 and steep minimum SS of 28 mV/dec. Back biasing effects are also investigated and the I on and average SS are improved by positive back biasing.
58 citations