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Biasing

About: Biasing is a research topic. Over the lifetime, 29422 publications have been published within this topic receiving 301035 citations.


Papers
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Journal ArticleDOI
TL;DR: In this article, Er2O3 thin films were epitaxially grown on Si (001) substrates and the dielectric constant of the film with an equivalent oxide thickness of 2.0nm is 14.4.
Abstract: Crystalline Er2O3 thin films were epitaxially grown on Si (001) substrates. The dielectric constant of the film with an equivalent oxide thickness of 2.0nm is 14.4. The leakage current density as small as 1.6×10−4A∕cm2 at a reversed bias voltage of −1V has been measured. Atomically sharp Er2O3∕Si interface, superior electrical properties, and good time stability of the Er2O3 thin film indicate that crystalline Er2O3 thin film can be an ideal candidate of future electronic devices.

58 citations

Patent
24 May 1991
TL;DR: In this article, the authors proposed an asymetric Fabry-Perot (FP) modulator, which includes a quantum well structure having wider (approximately 150A) than usual (about 100A) wells.
Abstract: An asymetric Fabry-Perot (FP) modulator includes a quantum well structure having wider (approximately 150A) than usual (about 100A) wells. The FP cavity has a resonance at a wavelength of an excitonic absorption peak of the QW structure. Although the maximum change in absorption under applied bias is less with 150A wells than with 100A wells, the characteristics of the electroabsorption are also altered, with the result that the largest change occurs at the wavelength of the band-edge el-hhl exciton at zero bias. Absorption can be reduced by biasing the QW and hence the AFPM can have a normally-off (zero bias, zero reflectivity) characteristic. Such an arrangement makes possible higher contrast modulation and/or lower operating voltages. The FP modulator may be used in SEEDs.

58 citations

Patent
15 Oct 2001
TL;DR: In this paper, an optically controlled microelectromechanical (MEM) switch is described which desirably utilizes photoconductive properties of a semiconductive substrate upon which MEM switches are fabricated.
Abstract: An optically controlled micro-electromechanical (MEM) switch is described which desirably utilizes photoconductive properties of a semiconductive substrate upon which MEM switches are fabricated. In one embodiment the bias voltage provided for actuation of the switch is altered by illuminating an optoelectric portion of the switch to deactivate the switch. In an alternative embodiment, a photovoltaic device provides voltage to actuate the switch without any bias lines at all. Due to the hysteresis of the electromechanical switching as a function of applied voltage, only modest variation of voltage applied to the switch is necessary to cause the switch to open or close sharply under optical control.

58 citations

Journal ArticleDOI
TL;DR: In this article, the authors used an electronic Mach-Zehnder interferometer to explore the nonequilibrium coherence of the electron waves within the edge states that form in the integral quantum-Hall-effect device.
Abstract: We use an electronic Mach-Zehnder interferometer to explore the nonequilibrium coherence of the electron waves within the edge states that form in the integral quantum-Hall-effect device. The visibility of the interference as a function of bias voltage and transmission probabilities of the mirrors, which are realized by quantum point contacts, reveals an unexpected asymmetry at finite bias when the transmission probability $T$ of the mirror at the input of the interferometer is varied between 0 and 100%, while the transmission probability of the other mirror at the output is kept fixed. This can lead to the surprising result of an increasing magnitude of interference with increasing bias voltage for certain values of $T$. A detailed analysis for various transmission probabilities and different directions of the magnetic field demonstrates that this effect is not related to the transmission characteristics of a single-quantum point contact but is an inherent property of the Mach-Zehnder interferometer with edge states.

58 citations

Patent
05 Oct 1999
TL;DR: In this article, a method and device for compensating a bias voltage on a wafer disposed over an electrostatic chuck in a processing chamber of a plasma processing system is described.
Abstract: Disclosed is a method and device for compensating a bias voltage on a wafer disposed over an electrostatic chuck in a processing chamber of a plasma processing system. The plasma processing system includes an electrostatic and RF power supplies that are coupeld to the electrostatic chuck. The bias compensation device includes a voltage converter, a storage unit, and a voltage adjusting circuitry. The voltage converter is coupled to the electrostatic chuck for detecting a voltage Vpp of the electrostatic chuck. The voltage converter converts the detected voltage to a lower voltage Vref. The storage unit stores a predetermined slope and a predetermined offset of a calibration curve, which is derived by fitting a plurality of wafer bias voltages as a function of electrostatic chuck voltages.

58 citations


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Performance
Metrics
No. of papers in the topic in previous years
YearPapers
2023256
2022488
2021480
2020923
2019946
2018977