Biasing

About: Biasing is a research topic. Over the lifetime, 29422 publications have been published within this topic receiving 301035 citations.

High-Performance Silicon-Compatible Large-Area UV-to-Visible Broadband Photodetector Based on Integrated Lattice-Matched Type II Se/n-Si Heterojunctions.

Abstract: A gold-induced NH4Cl-assisted vapor-based route is proposed and developed to achieve vertically aligned submicron Se crystals on lattice-matched (111)-oriented silicon substrates, based on which a high-performance large-area silicon-compatible photodetector is constructed. Thanks to the energy band structure and the strongly asymmetrical depletion region, the fabricated Se/Si device maintains a similar wavelength cutoff to that of selenium devices before the IR region, along with a high-performance broadband photoresponse in the UV-to-visible region. The large-area photodetector maintains a very low leakage current under a −2 V bias, and a high on/off ratio of 103–104 is obtained with a high photocurrent of 62 nA at 500 nm. A photoresponse is clearly observed when the bias voltage is removed. The pulse response precisely provides a high response speed (τrise + τfall ≈ 1.975 ms), exceeding the fastest Se-based photodetectors in current reports. The enhanced photoelectric properties and the self-power photo...

System for biasing a synthetic free layer in a magnetoresistance sensor

Abstract: A system and method for providing a magnetoresistive head is disclosed. The method and system include providing a spin valve including a synthetic free layer. The synthetic free layer includes a ferromagnetic layer. The method and system also include providing an antiferromagnetic biasing layer exchange coupled to a first portion of the ferromagnetic layer. The antiferromagnetic biasing layer magnetically biases the synthetic free layer to ensure the single domain structure and reduce noise.

Electrical transport through carbon nanotube junctions created by mechanical manipulation

Abstract: Using an atomic force microscope we have created nanotube junctions such as buckles and crossings within individual single-wall metallic carbon nanotubes connected to metallic electrodes. The electronic transport properties of these manipulated structures show that they form electronic tunnel junctions. The conductance shows power-law behavior as a function of bias voltage and temperature, which can be well modeled by a Luttinger liquid model for tunneling between two nanotube segments separated by the manipulated junction.

Antiferromagnetic layer thickness dependence of the IrMn/Co exchange-bias system

Abstract: A study of exchange bias in IrMn/Co systems is presented. Temperature and thickness dependence studies have revealed nonmonotonic behavior in both exchange bias field and coercivity with both variables. In particular the exchange bias field shows a peak for low IrMn thicknesses that is suppressed at temperatures higher than about 200 K. Calculations using the domain state model of exchange biasing are able to describe all the features seen in the experimental data.

A precision variable-supply CMOS comparator

Abstract: Several new techniques are presented for the design of precision CMOS voltage comparator circuits which operate over a wide range of supply voltages. Since most monolithic A/D converter systems contain an on-chip voltage reference, techniques have been developed to replicate the reference voltage in order to provide stable supply-independent DC bias voltages, and controlled internal voltage swings for the comparator. These techniques are necessary in order to eliminate harmful bootstrapping effects which can potentially occur in all AC coupled MOS analog circuits. An actively controlled biasing scheme has been developed to allow for differentially autozeroing the comparator for applications in differential A/D converter systems. A general approach for selecting the gain in AC-coupled gain stages is also presented. The comparator circuit has been implemented in a standard metal-gate CMOS process. The measured comparator resolution is less than 1 mV, and the allowable supply voltages range from 3.5 to 10 V.