Biasing

About: Biasing is a research topic. Over the lifetime, 29422 publications have been published within this topic receiving 301035 citations.

Electron‐beam lithography with the scanning tunneling microscope

Abstract: The scanning tunneling microscope (STM), operated in vacuum in the field emission mode, has been used in lithographic studies of the resist SAL‐601 from Shipley. Patterns have been written by raising the tip–sample voltage above −12 V while operating the STM in the constant current mode. Resist films, 50 nm thick, have been patterned and the pattern transferred into the GaAs substrate by reactive ion etching. The variation of feature size with applied dose and tip–sample bias voltage has been studied. Comparisons have been made to lithography with a 10 nm, 50 kV electron e‐beam in a JEOL JBX‐5DII in the same resist thickness films. In all cases the resist films were processed in the standard fashion before and after exposure. The STM can write smaller minimum features sizes and has a greater process latitude. Proximity effects are absent due to the reduced scattering range of the low energy primary electrons. However, the writing speed is slower, being limited by the response of the piezoelectric scanner....

Composition and mechanical properties of AlC, AlN and AlCN thin films obtained by r.f. magnetron sputtering

Abstract: article i nfo Aluminum carbide (Al-C), aluminum nitride (Al-N), and aluminum carbonitride (Al-C-N) thin films were grown onto Si (100) substrates by r.f. reactive magnetron sputtering at 400 °C. The Al-N coatings were obtained by sputtering of Al (99.9%) target in Ar/N2 atmosphere and the Al-C and Al-C-N by co-sputtering of a binary (50% Al, 50% C) target in argon and in Ar/N2 mixture, respectively. The d.c. bias voltage was varied between 0 and −150 V. The films were characterized by X-ray diffraction (XRD), energy dispersive X-ray spectroscopy (EDS), Fourier transformed infrared spectroscopy (FTIR) and the mechanical properties by nanoindentation. The structure of the films has been determined by XRD, which shows that amorphous films are formed in all cases. The variation of polarization bias voltage produced chemical differences in the films. As the bias voltage is increased, the Al content is reduced in all three materials. The nitrogen content also varied between 10 and 14 at.% for Al-N coatings, remaining practically constant (21 at.%) for the Al-C-N films. The Berkovich hardness results were 7.0, 17.2 and 9.2 GPa for Al-C, Al-N, and Al-C-N films, respectively.

Displacement detector having first and second magnetoresistive elements with a bias field at 45° to each element

Abstract: The magnetic field sensing apparatus includes first and second magnetoresistive elements having respective angularly disposed current path portions through which a bias current flows and to which a bias magnetic field is supplied. An external magnetic signal field is supplied from a magnetic source, and the magnetoresistive elements are relatively displaceable with respect to this source. The bias field is supplied at an angle of approximately 45° with respect to the direction in which the bias current flows in each current path; and the source of external magnetic field generates a signal field whose polarity gradually decreases and then changes over to an opposite polarity at a boundary region. This change in the signal field is sensed by the magnetic sensor as it is relatively displaced, thereby producing an output signal that varies substantially linearly with this displacement over a predetermined range on both sides of the boundary region.

Proton migration mechanism for the instability of organic field-effect transistors

Abstract: During prolonged application of a gate bias, organic field-effect transistors show an instability involving a gradual shift of the threshold voltage toward the applied gate bias voltage. We propose a model for this instability in p-type transistors with a silicon-dioxide gate dielectric, based on hole-assisted production of protons in the accumulation layer and their subsequent migration into the gate dielectric. This model explains the much debated role of water and several other hitherto unexplained aspects of the instability of these transistors.