Topic
Biasing
About: Biasing is a research topic. Over the lifetime, 29422 publications have been published within this topic receiving 301035 citations.
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Papers
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TL;DR: A review of the recent progress and major trends in the field of thin-film transistor (TFT) research involving the use of amorphous oxide semiconductors (AOS) is provided in this paper.
836 citations
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13 May 1994
TL;DR: In this paper, an ultrasonic oscillator drives a tool at a set frequency and an amplitude control runs the oscillator to set the vibration level, and a frequency regulator joins the amplitude and oscillator.
Abstract: An ultrasonic oscillator drives a tool at a set frequency. An amplitude control runs the oscillator to set the vibration level. A frequency regulator joins the amplitude and the oscillator. A control feedback loop, in the frequency regulator, keeps handpiece linear dynamics. An operational transconductance amplifier, in the oscillator, governs gain of the loop. A circuit connects to the control to retard the rate of current application over time to the amplifier. The circuit has switching to either retard the rate or reset for start up. The amplifier is a current output device with current directly proportional to the bias current and input voltage with bias as gain change for the loop. The circuit limits the bias to the amplifier to modify frequency response and output current. A capacitor delays application of the bias to the amplifier. Replaceable tools of various lengths or shapes positioned along an axis vibrate for surgery at the frequency and a wave length. Tools longer than one wavelength and of configurations tuned to oscillate around the frequency resonate as a function of their material, length and configuration. A flue surrounds the tool and has a hollow elongate semi rigid central body about an axis with a funnel, at one end thereof and a nozzle, at the other to direct annular irrigant/coolant flow therethrough. The funnel and nozzle are resilient. Reinforcing ridges, inside the nozzle, act to maintain concentricity between the flue and nozzle tip and channel irrigant thereabout.
785 citations
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13 Dec 2004TL;DR: In this article, a simple binary transition metal oxide (TMO) resistive random access memory (RRAM) was integrated with 0.18/spl mu/m CMOS technology, and its device as well as cell properties were reported for the first time.
Abstract: Simple binary-TMO (transition metal oxide) resistive random access memory named as OxRRAM has been fully integrated with 0.18/spl mu/m CMOS technology, and its device as well as cell properties are reported for the first time. We confirmed that OxRRAM is highly compatible with the conventional CMOS process such that no other dedicated facility or process is necessary. Filamentary current paths, which are switched on or off by asymmetric unipolar voltage pulses, made the cell properties insensitive to cell or contact size promising high scalability. Also, OxRRAM showed excellent high temperature performance, even working at 300/spl deg/C without any significant degradation. With optimized TMO material and electrodes, OxRRAM operated successfully under 3V bias voltage and 2mA switching current at a TMO cell size smaller than 0.2/spl mu/m/sup 2/.
672 citations
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TL;DR: In this article, a low-voltage, low dropout (LDO) regulator is proposed to minimize the quiescent current flow in a battery-operated system, which is an intrinsic performance parameter because it partially determines battery life.
Abstract: The demand for low-voltage, low drop-out (LDO) regulators is increasing because of the growing demand for portable electronics, i.e., cellular phones, pagers, laptops, etc. LDO's are used coherently with dc-dc converters as well as standalone parts. In power supply systems, they are typically cascaded onto switching regulators to suppress noise and provide a low noise output. The need for low voltage is innate to portable low power devices and corroborated by lower breakdown voltages resulting from reductions in feature size. Low quiescent current in a battery-operated system is an intrinsic performance parameter because it partially determines battery life. This paper discusses some techniques that enable the practical realizations of low quiescent current LDO's at low voltages and in existing technologies. The proposed circuit exploits the frequency response dependence on load-current to minimize quiescent current flow. Moreover, the output current capabilities of MOS power transistors are enhanced and drop-out voltages are decreased for a given device size. Other applications, like dc-dc converters, can also reap the benefits of these enhanced MOS devices. An LDO prototype incorporating the aforementioned techniques was fabricated. The circuit was operable down to input voltages of 1 V with a zero-load quiescent current flow of 23 /spl mu/A. Moreover, the regulator provided 18 and 50 mA of output current at input voltages of 1 and 1.2 V, respectively.
644 citations
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TL;DR: In this article, a dioctyl-substituted polyfluorene was used as the emissive layer in combination with a polymeric triphenyldiamine hole transport layer.
Abstract: Efficient blue electroluminescence, peaked at 436 nm, is demonstrated from polymer light-emitting diodes operating at high brightness A dioctyl-substituted polyfluorene was used as the emissive layer in combination with a polymeric triphenyldiamine hole transport layer The luminance reaches 600 cd/m2 at a current density of 150 mA/cm2 for a bias voltage of 20 V, corresponding to an efficiency of 025 cd/A and a luminosity of 004 lm/W These values are optimized at a critical emissive layer thickness
614 citations