Biasing

About: Biasing is a research topic. Over the lifetime, 29422 publications have been published within this topic receiving 301035 citations.

Ultrasonic liquid atomizer with an improved soft start circuit

Abstract: In an ultrasonic liquid atomizer, an oscillator has a transistor and a resonant circuit a part of which is formed by a piezoelectric vibrator mounted in an energy transfer relationship with liquid in a chamber. The transistor and the resonant circuit receive a full-wave rectified supply voltage to generate ultrasonic energy in the vibrator in the presence of a bias voltage. A soft start circuit has a time constant circuit responsive to the bias voltage and a transistor responsive to an output of the time constant circuit which provides switching action in phase with the full-wave rectified supply voltage so that ultrasonic energy is generated in the form of a series of bursts having durations gradually increasing as a function of time during an initial brief interval from application of the bias voltage to the oscillator. A bias stabilizer has a second time constant circuit responsive to the bias voltage and a transistor connected to the output of the second time constant circuit to establish a low impedance path across the base and emitter of the transistor of soft start circuit after termination of the initial brief interval.

Phase-coherent control of photocurrent directionality in semiconductors.

Abstract: We demonstrate that one can generate and control photocurrents in semiconductors, without bias voltage, through multiple-frequency phase-coherent laser excitation of donors.

Setting an operating bias current for a magnetoresistive head using ratio of target voltage and measured voltage

Abstract: A method is disclosed for setting an operating bias current for a magnetoresistive (MR) element. A bias current is applied to the MR element, and a voltage across the MR element is measured corresponding to the bias current. The bias current is then adjusted in response to the bias current multiplied by a ratio of a target voltage and the measured voltage. The adjusted bias current is then applied to the MR element. In one embodiment, the bias current is adjusted until the measured voltage substantially equals the target voltage.

Mitigating Parameter Variation with Dynamic Fine-Grain Body Biasing

Abstract: Parameter variation is detrimental to a processor's frequency and leakage power. One proposed technique to mitigate it is Fine-Grain Body Biasing (FGBB), where different parts of the processor chip are given a voltage bias that changes the speed and leakage proper- ties of their transistors. This technique has been proposed for static application, with the bias voltages being programmed at manufac- turing time for worst-case conditions. In this paper, we introduce Dynamic FGBB (D-FGBB), which allows the continuous re-evaluation of the bias voltages to adapt to dynamic conditions. Our results show that D-FGBB is very versa- tile and effective. Specifically, with the processor working in nor- mal mode at fixed frequency, D-FGBB reduces the leakage power of the chip by an average of 28 42% compared to static FGBB. Alternatively, with the processor working in a high-performance mode, D-FGBB increases the processor frequency by an average of 7 9% compared to static FGBB -- or 7 16% compared to no body biasing. Finally, we also show that D-FGBB can be syner- gistically combined with Dynamic Voltage and Frequency Scaling (DVFS), creating an effective means to manage power.

High-resolution Schottky CdTe diode for hard X-ray and gamma-ray astronomy

Abstract: We report a significant improvement of the spectral properties of cadmium telluride (CdTe) detectors, fabricated in the form of a Schottky CdTe diode. With the use of high quality CdTe wafer, we formed a Schottky junction by evaporating indium on the Te-face and operated the detector as a diode. This allows us to apply much higher bias voltage than was possible with the previous CdTe detectors. A 2 mm×2 mm detector of thickness 0.5 mm, when operated at a temperature of 5°C, shows leakage current of only 0.2 and 0.4 nA for an operating voltage of 400 and 800 V, respectively. We found that, at a high-electric field of several kV cm−1, the Schottky CdTe diode has very good energy resolution and stability, suitable for astronomical applications. The broad low-energy tail, often observed in CdTe detectors due to the low mobility and short lifetime of holes, was significantly reduced by the application of a higher bias voltage which improves the charge collection efficiency. We achieved very good FWHM energy resolution of 1.1% and 0.8% at energies 122 and 511 keV, respectively, without any rise time discrimination or pulse height correction electronics. For the detection of hard X-rays and gamma-rays above 100 keV, we have improved the detection efficiency by stacking a number of thin CdTe diodes. Using individual readout electronics for each layer, we obtained high detection efficiency without sacrificing the energy resolution. In this paper, we report the performance of the new CdTe diode and discuss its proposed applications in future hard X-ray and gamma-ray astronomy missions.