Topic
Biasing
About: Biasing is a research topic. Over the lifetime, 29422 publications have been published within this topic receiving 301035 citations.
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TL;DR: In this paper, an effective method of linearizing the electrostatic transfer characteristics of micromachined two-dimensional (2-D) scanners was presented, where a pair of differential voltages over a bias voltage was used to improve the distortion of projected images from 72% to only 13%.
Abstract: This paper presents an effective method of linearizing the electrostatic transfer characteristics of micromachined two-dimensional (2-D) scanners. The orthogonal scan angles of surface micromachined polysilicon scanner are controlled by using quadrant electrodes for electrostatic actuation. By using a pair of differential voltages over a bias voltage, we could improve the distortion of projected images from 72% to only 13%. A theoretical model has been developed to predict the angle-voltage transfer characteristics of the 2-D scanner. The simulation results agree very well with experimental data. Differential voltage operation has been found to suppress the crosstalk of two orthogonal scan axes by both experiment and theoretically. We have found that a circular mirror is expected to have the lowest angular distortion compared with square mirrors. Perfect grid scanning pattern of small distortion (0.33%) has been successfully obtained by predistorting the driving voltages after calibration.
122 citations
TL;DR: In this article, annealed NiO film exhibits room-temperature electroluminescence (EL), which was attributed to the detrimental effects of nickel oxide hydroxide in as-grown NiO layers.
Abstract: Heterojunction NiO∕ZnO light emitting diodes have been fabricated using low temperature solution-based growth methods. While negligible light emission has been obtained for the as-grown NiO film, devices with annealed NiO film exhibit room-temperature electroluminescence (EL), which was attributed to the detrimental effects of nickel oxide hydroxide in as-grown NiO layers. The device performance can be further modified by insertion of the organic layers between NiO and ZnO and the EL spectra exhibited dependence on the bias voltage. For higher bias voltages, strong UV-violet emission peak can be obtained in spite of the dominance of defect emission in the photoluminescence spectra.
121 citations
TL;DR: In this article, the authors report negative capacitance at low frequencies in organic semiconductor based diodes and show that it appears only under bipolar injection conditions and account quantitatively for this phenomenon by the recombination current due to electron-hole annihilation.
Abstract: The authors report negative capacitance at low frequencies in organic semiconductor based diodes and show that it appears only under bipolar injection conditions. They account quantitatively for this phenomenon by the recombination current due to electron-hole annihilation. Simple addition of the recombination current to the well established model of space charge limited current in the presence of traps yields excellent fits to the experimentally measured admittance data. The dependence of the extracted characteristic recombination time on the bias voltage is indicative of a recombination process which is mediated by localized traps.
121 citations
TL;DR: In this article, the magnetic field behavior of the off-diagonal impedance in Co-based amorphous wires under sinusoidal (50 MHz) and pulsed (5 ns rise time) current excitations was investigated.
Abstract: We investigated the magnetic-field behavior of the off-diagonal impedance in Co-based amorphous wires under sinusoidal (50 MHz) and pulsed (5 ns rise time) current excitations. For comparison, we measured the field characteristics of the diagonal impedance as well. In general, when an alternating current is applied to a magnetic wire, the voltage signal is generated not only across the wire but also in a pickup coil wound on it. These voltages are related to the diagonal and off-diagonal impedances, respectively. We demonstrate that these impedances have a different behavior as functions of axial magnetic field: the diagonal impedance is symmetrical, whereas the off-diagonal one is antisymmetrical with a near-linear portion within a certain field interval. For the off-diagonal response, the dc bias current is necessary to eliminate circular domains. In the case of the sinusoidal excitation without a dc bias current, the off-diagonal response is very small and irregular. In contrast, the pulsed excitation, combining both high- and low-frequency harmonics, produces the off-diagonal voltage response without additional biasing. This behavior is ideal for a practical sensor circuit design. We discuss the principles of operation of a linear magnetic sensor based on a complementary metal-oxide-semiconductor transistor circuit.
121 citations
TL;DR: In this paper, the first 10-nm-gate-length DG MOS transistors with metal gates were processed, which exhibited excellent short-channel effects control and high-performance characteristics.
Abstract: Thanks to bonding, metal-gate etching without any out-of-gate Si consumption, and self-aligned transfer of alignment marks, we have processed the first 10-nm-gate-length DG MOS transistors with metal gates. These devices exhibit excellent short-channel effects control and high-performance characteristics. Their saturation current is very sensitive to the access resistance increase caused by film thinning required to respect the scaling rules. Moreover, their electrical properties can be tuned between LSTP and HP by independently biasing the two gates.
121 citations