Topic
Biasing
About: Biasing is a research topic. Over the lifetime, 29422 publications have been published within this topic receiving 301035 citations.
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TL;DR: In this article, a microelectromechanical system (MEMS) thermal flow sensing array constructed of biocompatible materials has been designed, fabricated, and tested, and the electronic biasing conditions were selected such that sensor operation was compatible with biological fluids.
Abstract: A microelectromechanical systems (MEMS) thermal flow sensing array constructed of biocompatible materials has been designed, fabricated, and tested. In addition to the construction, the electronic biasing conditions were selected such that sensor operation was compatible with biological fluids. The device comprises several thin film platinum sensing elements sandwiched in a Parylene C membrane. The membrane is suspended over a bulk-micromachined silicon channel for improved thermal isolation. This sensing array layout permits, for the first time, operation in multiple flow sensing modes using a single device. Multi-mode testing was performed in hot-film, calorimetric, and time-of-flight modes at low overheat ratios. Furthermore, constant current (CC) and constant temperature (CT) biasing methods were explored in hot-film mode. The results of the various testing modes were compared and flow sensing down to 0.5 μL/min has been demonstrated.
108 citations
TL;DR: In this article, a spintronic transistor based on the spin relaxation properties of a two-dimensional electron gas (2DEG) was proposed, which works in the diffusive regime rather than in the ballistic regime.
Abstract: We present a device concept for a spintronic transistor based on the spin relaxation properties a two-dimensional electron gas (2DEG). The device design is very similar to that of the Datta and Das spin transistor. However, our proposed device works in the diffusive regime rather than in the ballistic regime. This eases lithographical and processing requirements. The switching action is achieved through the biasing of a gate contact, which controls the lifetime of spins injected into the 2DEG from a ferromagnetic emitter, thus allowing the traveling spins to be either aligned with a ferromagnetic collector or randomizing them before collection. The device configuration can easily be turned into a memory and a readout head for magnetically stored information.
108 citations
TL;DR: As predicted, the measured current responsivity of the bolometer is equal to the inverse of the bias voltage, and excess noise was observed for bias conditions for which the electrothermal feedback strength was close to maximum.
Abstract: We present an experimental study of a composite voltage-biased superconducting bolometer (VSB). The tested VSB consists of a Ti-film superconducting thermometer (Tc ∼ 375 mK) on a Si substrate suspended by NbTi superconducting leads. A resistor attached to the substrate provides calibrated heat input into the bolometer. The current through the bolometer is measured with a superconducting quantum interference device ammeter. Strong negative electrothermal feedback fixes the bolometer temperature at Tc and reduces the measured response time from 2.6 s to 13 ms. As predicted, the measured current responsivity of the bolometer is equal to the inverse of the bias voltage. A noise equivalent power of 5 × 10-17 W/√Hz was measured for a thermal conductance G ∼ 4.7 × 10-10 W/K, which is consistent with the expected thermal noise. Excess noise was observed for bias conditions for which the electrothermal feedback strength was close to maximum.
108 citations
IBM1
TL;DR: In this article, the intrinsic current-gain and power-gain cutoff frequencies (fT and fMAX) above 1 THz should be possible in both AFETs and GFETs.
Abstract: Carbon electronics based on carbon nanotube array field-effect transistors (AFETs) and 2-dimensional graphene field-effect transistors (GFETs) have recently attracted significant attention for potential RF applications. Here, we explore the ultimate RF performance potential for these two unique devices using semi-classical ballistic transport simulations. It is shown that the intrinsic current-gain and power-gain cutoff frequencies (fT and fMAX) above 1 THz should be possible in both AFETs and GFETs. Thus, both devices could deliver higher cut-off frequencies than traditional semiconductors such as Si and III-V's. In the case of AFETs, we show that their RF operation is not sensitive to the diameter variation of semiconducting tubes and the presence of metallic tubes in the channel. The ultimate fT and fMAX values in AFETs are observed to be higher than that in GFETs. The optimum device biasing conditions for AFETs require smaller biasing currents, and thus, lower power dissipation compared to GFETs. The degradation in high-frequency performance in the presence of external parasitics is also seen to be lower in AFETs compared to GFETs.
107 citations
TL;DR: In this paper, the authors showed that spitter-deposited Cr-doped SrZrO/sub 3/--based metal-insulator-metal structures exhibited bistable resistive reversible switching as observed under bias voltage and voltage pulse.
Abstract: Sputter-deposited Cr-doped SrZrO/sub 3/-based metal-insulator-metal structures exhibited bistable resistive reversible switching as observed under bias voltage and voltage pulse. The ratio of resistance of the two leakage states (high-H, low-L) was about five orders of magnitude. The conduction of the L-state satisfied Frenkel-Poole emission and that of the H-state followed ohmic mechanism, causing the resistance ratio to decrease with increasing bias voltage. The transition time of H- to L-state was five orders of magnitude higher than that of L- to H-state. The transition from H- to L-state was the restricted part for reversible switching operation. The difference in transition time of the two states should be related to the respective conduction mechanisms.
106 citations