Topic
Biasing
About: Biasing is a research topic. Over the lifetime, 29422 publications have been published within this topic receiving 301035 citations.
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TL;DR: The T-AFM permits us to connect a single DNA molecule with carbon nanotube electrodes as source, drain, and gate terminals and can observe the clear steps in the I–V curve at crossing the DNA molecule and the CNT-gate electrode with gate biased.
Abstract: We have measured the electric properties of a three-terminal single molecule DNA device with a triple-probe atomic force microscope (T-AFM). The T-AFM permits us to connect a single DNA molecule with carbon nanotube (CNT) electrodes as source, drain, and gate terminals. As the gate bias voltage is increased, the voltage gap region decreased in the current–voltage (I–V) curves. Furthermore, we can observe the clear steps in the I–V curve at crossing the DNA molecule and the CNT-gate electrode with gate biased.
98 citations
TL;DR: A new family of single-stage super Class-AB operational transconductance amplifiers suitable for low-voltage operation and low power consumption is presented and three novel topologies are proposed featuring simplicity and compactness.
Abstract: A new family of single-stage super Class-AB operational transconductance amplifiers (OTAs) suitable for low-voltage operation and low power consumption is presented. Three novel topologies are proposed featuring simplicity and compactness. They are based on the combination of adaptive biasing techniques for the differential input stage and nonlinear current mirrors for the active load that provide additional dynamic current boosting. The OTAs have been fabricated in a standard 0.5-mum CMOS process. Experimental results show a greatly improved slew rate by factors 30-60 and gain-bandwidth product by factors 11.5-17 when compared to a classical Class-A OTA. The circuits are operated at plusmn1-V supply voltage with only 10 muA of bias current
98 citations
Patent•
23 Jun 2004
TL;DR: In this article, a method and apparatus for controlling conduction between two nodes of an integrated circuit via a stack of FETs of common polarity, coupled in series, is described.
Abstract: A method and apparatus is described for controlling conduction between two nodes of an integrated circuit via a stack of FETs of common polarity, coupled in series. In an RF Power Amplifier (PA) having appropriate output filtering, or in a quad mixer, stacks of two or more FETs may be used to permit the use of increased voltages between the two nodes. Power control for such RF PAs may be effected by varying a bias voltage to one or more FETs of the stack. Stacks of three or more FETs may be employed to control conduction between any two nodes of an integrated circuit.
98 citations
01 Feb 2012
TL;DR: A heated semiconductor light-emitting diode at low forward bias voltage V
Abstract: A heated semiconductor light-emitting diode at low forward bias voltage V
98 citations
TL;DR: It is shown that quasi-metallic carbon nanotubes in the ballistic transport regime their spontaneous emission spectra have a universal frequency and bias voltage dependence, which raises the possibility of utilizing this effect for high-frequency nanoelectronic devices.
Abstract: We demonstrate theoretically that quasi-metallic carbon nanotubes emit terahertz radiation induced by an applied voltage. It is shown that in the ballistic transport regime their spontaneous emission spectra have a universal frequency and bias voltage dependence, which raises the possibility of utilizing this effect for high-frequency nanoelectronic devices.
97 citations