Topic
Biasing
About: Biasing is a research topic. Over the lifetime, 29422 publications have been published within this topic receiving 301035 citations.
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TL;DR: In this article, the etch rates, residual lattice damage, surface morphologies, and chemistries of InP, InGaAs, AlInAs, and GaAs plasma etched in electron cyclotron resonance (ECR) CH4/H2/Ar discharges were investigated.
Abstract: We have investigated the etch rates, residual lattice damage, surface morphologies, and chemistries of InP, InGaAs, AlInAs, and GaAs plasma etched in electron cyclotron resonance (ECR) CH4/H2/Ar discharges. The etch rates of InP and InGaAs increase linearly with additional rf biasing of the substrate, and are approximately a factor of 2 faster than for GaAs. Under our conditions the etch rate of Al0.52Ga0.48As is very low (∼25 A min−1) even for the addition of 100 V rf bias. In all of these materials the residual damage layer remaining after dry etching is very shallow (∼20 A) as evidenced from Schottky barrier height and photoluminescence measurements combined with wet chemical etching. InP shows significant P depletion with the addition of rf biasing during the ECR etching while GaAs retains a near‐stoichiometric surface. Hydrogen passivation of shallow donors in n‐type GaAs occurs to a depth of ∼3000 A during exposure to the CH4/H2/Ar discharge for long periods (60 min). The surface morphologies in the...
99 citations
Patent•
01 Mar 1999TL;DR: In this article, a switching mode voltage regulator circuit that operates at reduced quiescent current levels is provided, where an error amplifier in the control circuit is placed in a micropower operating state when the regulator is in standby mode.
Abstract: A switching mode voltage regulator circuit that operates at reduced quiescent current levels is provided. The voltage regulator preferably includes a control circuit and a switching element that connects and disconnects filter circuitry from the control circuit. An error amplifier in the control circuit is placed in a micropower operating state when the regulator is in standby mode to reduce quiescent current.
98 citations
TL;DR: In this article, the authors used highly sensitive InAs/GaSb 3D position sensors for the detection of tire tread deformation, which results in increased voltage related Hall sensitivities (0.6 T−1 ) for 5 V bias voltage.
Abstract: This work reports on integrated highly sensitive InAs/GaSb 3D position sensors for the detection of tire tread deformation. The use of the InAs/GaSb heterostructures provides higher electron mobilities (26,000 cm2/V); this results in increased voltage related Hall sensitivities (0.6 T−1 ) for 5 V bias voltage. Reduced power consumption of such sensors makes them attractive for their implementation within battery-operated measurement systems.
98 citations
27 May 2007
TL;DR: A novel interface for ion-sensitive field effect transistors (ISFET) in which operation at a fixed electrical bias is achieved by voltage clamping is presented, and the chosen topology provides pH-dependent current and voltage output signals to drive an appropriate output stage.
Abstract: This paper presents a novel interface for ion-sensitive field effect transistors (ISFET) in which operation at a fixed electrical bias is achieved by voltage clamping. The chosen topology provides pH-dependent current and voltage output signals to drive an appropriate output stage. The circuit can be operated in either strong or weak inversion, depending on the requirements of the application with a pseudo-differential ISFET-REFET topology to allow use of an on-chip reference electrode. Simulation results are shown herein for single-ended and differential implementations. For a single-ended front-end with 1nA bias current, the strong inversion implementation at 2.5V supply has a power consumption of 0.185mW at pH 7 and the weak inversion implementation at 1.5V supply has a power consumption of 13nW at pH 7. The circuit and ISFET-REFET pair have been fabricated in the UMC 0.25mum CMOS technology.
98 citations
TL;DR: A method is described to determine the magnitudes of the bias illumination and bias voltage during EQE measurements, based on the behavior of single junction cells and optical modeling, which correctly predict the current density–voltage characteristics of the tandem cell under AM1.5G conditions.
Abstract: Tandem configurations, in which two cells are stacked and connected in series, offer a viable approach to further increase the power conversion efficiency (PCE) of organic solar cells. To enable the future rational design of new materials it is important to accurately assess the contributions of individual subcells. Such accurate measurement of the external quantum efficiency (EQE) of the subcells of two-terminal organic or polymer tandem solar cells poses specific challenges, caused by two characteristics of these cells, i.e. a sub-linear light intensity dependence of the current and a field-assisted charge collection. These properties necessitate that EQE experiments are carried out under representative illumination conditions and electrical bias to maintain short-circuit conditions for the addressed subcell. We describe a method to determine the magnitudes of the bias illumination and bias voltage during EQE measurements, based on the behavior of single junction cells and optical modeling. The short-circuit current densities of the subcells obtained by convolution of the EQE with the AM1.5G solar spectrum are consistent with those obtained from optical modeling and correctly predict the current density–voltage characteristics of the tandem cell under AM1.5G conditions.
98 citations