Biasing

About: Biasing is a research topic. Over the lifetime, 29422 publications have been published within this topic receiving 301035 citations.

The origin of anomalous peak and negative capacitance in the forward bias capacitance-voltage characteristics of Au/PVA/n-Si structures

Abstract: The frequency dependence of capacitance-voltage (C-V) and conductance-voltage (G/ω-V) characteristics of the Au/polyvinyl alcohol (Ni, Zn-doped)/n-Si Schottky barrier diodes (SBDs) was investigated in the frequency range of 3 kHz-3 MHz at room temperature by considering series resistance (Rs) and interface states (Nss) effects. The C-V and G/ω-V characteristics confirm that the Rs and Nss are important parameters that strongly influence the electrical parameters of SBDs. The C-V plots show an intersection point (∼2.9 V) at low frequencies (f ≤ 30 kHz) and then take negative values, which is known as negative capacitance (NC) behavior. The negativity of the C increases with the decreasing frequency in the forward bias voltage region, and this decrement in the NC corresponds to the increment in the conductance. Also, the forward bias C-V plots show an anomalous peak in the voltage range of 1.55–1.9 V depending on the frequency such that the anomalous peaks shift toward positive voltage values with the incre...

Performance Limits Projection of Black Phosphorous Field-Effect Transistors

Abstract: Ballistic device performance of monolayer black phosphorous (BP) field-effect transistors (FETs) is investigated in this letter. Due to the anisotropic effect mass of the carriers, the ON-state current is dependent on the transport direction. The effective masses are lower in the armchair direction, which provides higher drive current at the same biasing. The degree of anisotropy is higher for the holes, which improves the performance of p-type devices. The intrinsic delay of 20-nm BP FETs is in the range of 50 fs at ON-/OFF-current ratio of four orders. Monolayer BP FETs outperform both MoS 2 and Si FETs for both nand p-type devices in terms of ballistic performance limits, due to highly anisotropic band structure.

Step-flow growth of SrTiO3 thin films with a dielectric constant exceeding 104

Abstract: The use of SrTiO3 films in cryogenic high-frequency applications has been limited by the low dielectric constant er of thin films (≈103) when compared to the bulk value of over 104. We show that the extension of the pulsed laser deposition technique to temperatures well above 1000 °C, coupled with in situ reflection high energy electron diffraction monitoring, makes it possible to grow SrTiO3 films in the step-flow mode. Films grown in this mode showed at 4.2 K a maximum er of 12 700, which could be tuned by 80% by applying a bias voltage of ±1 V.

Effect of nitrogen pressure, bias voltage and substrate temperature on the phase structure of Mo–N coatings produced by cathodic arc PVD

Abstract: In this study, the effect of nitrogen pressure, bias voltage and the substrate temperature on the structure of Mo–N coatings produced by arc PVD was investigated. High speed steel substrates were coated at 1.9, 1.5, 1.2, 0.8 and 0.4 Pa nitrogen pressures by using −150, −250 and −350 V bias voltages. The coating procedures were performed at two temperature ranges: at 410–510 °C and at 300–380 °C. At the nitrogen pressure of 1.9 Pa and bias voltage of −150 V, δ-MoN (hexagonal) phase was obtained. When the pressure decreased to 1.5 and 1.2 Pa, mixed phases of δ-MoN and γ-Mo 2 N were produced. At lower nitrogen pressures of 0.4 and 0.8 Pa coatings consisted mainly of γ-Mo 2 N. At higher bias voltages it was impossible to produce single phase δ-MoN even at the highest nitrogen pressure (1.9 Pa). At lower nitrogen pressure and higher bias voltages cubic γ-Mo 2 N was the predominant phase. Lower substrate temperatures promoted the formation of δ-MoN phase. The hardness of the coatings changed from 3372 to 5085 kg/mm 2 depending on the ratio of phase components in the coatings.

Mobile ionic impurities in organic semiconductors

Abstract: We study the stability in time of the current–voltage characteristics of organic thin-film devices on glass substrates. We find for poly(3-hexylthiophene) and for pentacene that the resistance of the devices gradually changes under the application of an electrical bias depending on the sodium content of the glass substrates used in the experiment. For devices on a very common type of glass (with a Na2O content of about 6%) and on sodalime glass (14% Na2O) substrates, the prolonged application of a voltage bias results in a substantial decrease (up to two orders of magnitude) of the bulk and contact resistances, whereas for sodium-free glass substrates the gradual changes in current–voltage characteristics are much smaller. A systematic study of the electrical behavior complemented by chemical analysis shows that the instabilities observed are due to Na+ ions diffusing from the substrate into the organic film, and moving inside the organic material as a result of the applied electric field. Our results show in detail how ion motion in organic materials results in substantial hysteresis and device instabilities.