Biasing

About: Biasing is a research topic. Over the lifetime, 29422 publications have been published within this topic receiving 301035 citations.

Modeling and analysis of high-speed electro-optic modulation in high confinement silicon waveguides using metal-oxide-semiconductor configuration

Abstract: We analyze the electrical and optical properties of a silicon electro-optic waveguide modulator using a metal-oxide-semiconductor (MOS) configuration. The device performance is studied under different modes of operation of the MOS diode and gate oxide thicknesses. Our calculations indicate that this scheme can be used for achieving high-speed submicron waveguide active devices on silicon on insulator. A microring resonator intensity modulator is predicted to exhibit switching times on the order of tens of picoseconds with modulation depth of 73% by employing a bias voltage of only 5 V.

Low-voltage bandgap reference circuit

Abstract: In a bandgap voltage reference circuit in accordance with the present invention, the different-sized emitters of the two bipolar devices of a ΔV BE stage return to ground (or other bias voltage) through separate resistors. The V BE term of the reference device is supplied by a V BE current source through a third resistor. The proportional-to-absolute-temperature (PTAT) term of the reference occurs as the difference of base-emitter voltages ΔV BE between the larger and smaller emitters. An output voltage V out multiplier resistor feeds to the larger emitter through an inverting amplifier. In one embodiment of the invention, the output voltage V out trim at one temperature is obtained by trimming the base-emitter resistor of the “small emitter” device to compensate for the V BE process variation.

Anomalous transport effects on switching currents of graphene-based Josephson junctions.

Abstract: We explore the effect of noise on the ballistic graphene-based small Josephson junctions in the framework of the resistively and capacitively shunted model. We use the non-sinusoidal current-phase relation specific for graphene layers partially covered by superconducting electrodes. The noise induced escapes from the metastable states, when the external bias current is ramped, given the switching current distribution, i.e. the probability distribution of the passages to finite voltage from the superconducting state as a function of the bias current, that is the information more promptly available in the experiments. We consider a noise source that is a mixture of two different types of processes: a Gaussian contribution to simulate an uncorrelated ordinary thermal bath, and non-Gaussian, α-stable (or Levy) term, generally associated to non-equilibrium transport phenomena. We find that the analysis of the switching current distribution makes it possible to efficiently detect a non-Gaussian noise component in a Gaussian background.

Regulated charge pump and method therefor

Abstract: A regulated charge pump (43) includes a charge pump core (114) having a charging capacitor (80). An output voltage on a first terminal (72) of the charging capacitor (80) is transferred to a holding capacitor (81). A second terminal (73) of the charging capacitor (80) is alternatively connected to positive and negative power supply voltage terminals in response to non-overlapping clock signals. The first terminal (72) of the charging capacitor (80) is connected through first (150) and second (151) transistors to the positive power supply voltage terminal. A proportional portion (112) provides a coarse regulation by biasing the first transistor (150) proportional to a comparison between a predetermined fraction of an output voltage and a reference voltage. An integrating portion (113) provides a precise regulation by biasing the second transistor (151) proportional to an integrated difference between the output voltage and a reference voltage.