Biasing

About: Biasing is a research topic. Over the lifetime, 29422 publications have been published within this topic receiving 301035 citations.

Optimized electronic operation of digital micromirror devices

Abstract: A method for controlling a digital micromirror device resulting in decreased mechanical stress, longer device lifetimes, decreased incidence of spontaneous bit reset, and increased pulse-width modulation accuracy. To reduce the device stress, the bias voltage applied to the mirror may be reduced after the mirror has been latched. To prevent premature mirror changes, the address electrode bias voltage may be reduced after the mirror is driven to the desired position. To ensure that the mirror returns to the neutral position during reset, the mirror bias voltage may be raised from ground potential to approximately halfway between the two addressing voltages during the reset period. To reduce the effects of hinge memory and to ensure that the mirror rotates toward the proper address electrode, the mirror bias voltage may be gradually increased to allow the mirror time to rotate towards the proper address electrode.

GaAs metal–oxide–semiconductor field-effect transistor with nanometer-thin dielectric grown by atomic layer deposition

Abstract: A GaAs metal–oxide–semiconductor field-effect transistor (MOSFET) with thin Al2O3 gate dielectric in nanometer (nm) range grown by atomic layer deposition is demonstrated. The nm-thin oxide layer with significant gate leakage current suppression is one of the key factors in downsizing field-effect transistors. A 1 μm gate-length depletion-mode n-channel GaAs MOSFET with an Al2O3 gate oxide thickness of 8 nm, an equivalent SiO2 thickness of ∼3 nm, shows a broad maximum transconductance of 120 mS/mm and a drain current of more than 400 mA/mm. The device shows a good linearity, low gate leakage current, and negligible hysteresis in drain current in a wide range of bias voltage.

Critical Voltage for Electrical Degradation of GaN High-Electron Mobility Transistors

Abstract: We have found that there is a critical drain-to-gate voltage beyond which GaN high-electron mobility transistors start to degrade in electrical-stress experiments. The critical voltage depends on the detailed voltage biasing of the device during electrical stress. It is higher in the OFF state and high-power state than at VDS = 0. In addition, as |VGS| increases, the critical voltage decreases. We have also found that the stress current does not affect the critical voltage although soft degradation at low voltages takes place at high stress currents. All of our findings are consistent with a degradation mechanism based on crystallographic-defect formation due to the inverse piezoelectric effect. Hot-electron-based mechanisms seem to be in contradiction with our experimental results.

Graphene based tunable metamaterial absorber and polarization modulation in terahertz frequency

Abstract: Graphene can be utilized in designing tunable terahertz devices due to its tunability of sheet conductivity. In this paper, we combine the metamaterial having unit cell of cross-shaped metallic resonator with the double layer graphene wires to realize polarization independent absorber with spectral tuning at terahertz frequency. The absorption performance with a peak frequency tuning range of 15% and almost perfect peak absorption has been demonstrated by controlling the Fermi energy of the graphene that can be conveniently achieved by adjusting the bias voltage on the graphene double layers. The mechanism of the proposed absorber has been explored by a transmission line model and the tuning is explained by the changing of the effective inductance of the graphene wires under gate voltage biasing. Further more, we also propose a polarization modulation scheme of terahertz wave by applying similar polarization dependent absorbers. Through the proposed polarization modulator, it is able to electrically control the reflected wave with a linear polarization of continuously tunable azimuth angle of the major axis from 0° to 90° at the working frequency. These design approaches enable us to electrically control the absorption spectrum and the polarization state of terahertz waves more flexibly.

Nonlinear spin current and magnetoresistance of molecular tunnel junctions.

Abstract: We report on a theoretical study of spin-polarized quantum transport through a Ni-bezenedithiol(BDT)-Ni molecular magnetic tunnel junction (MTJ). Our study is based on carrying out density functional theory within the Keldysh nonequilibrium Green's function formalism, so that microscopic details of the molecular MTJ are taken into account from first principles. A magnetoresistance ratio of $\ensuremath{\sim}27%$ is found for the Ni-BDT-Ni MTJ which declines toward zero as bias voltage is increased. The spin currents are nonlinear functions of bias voltage, even changing sign at certain voltages due to specific features of the coupling between molecular states and magnetic leads.