Biasing

About: Biasing is a research topic. Over the lifetime, 29422 publications have been published within this topic receiving 301035 citations.

1/f Noise in (Hg, Cd)Te photodiodes

Abstract: In this article we present results of experiments to characterize 1/ f noise in Hg 0.7 Cd 0.3 Te n+-on-p junction photodiodes. Under zero-bias voltage conditions, the photodiodes display no 1/ f noise, even in the presence of large photocurrents. Under reverse-bias voltage operation, 1/ f noise is observed. In these experiments, the 1/ f noise was measured as a function of temperature, diode bias voltage, and photon flux. Since these parameters varied the relative contributions of the various current mechanisms, the diode current mechanism responsible for 1/ f noise was isolated. It was found that 1/ f noise is independent of photocurrent and diffusion current but is linearly related to surface generation current. It is proposed that 1/ f noise in reverse-biased (Hg, Cd)Te photodiodes is a result of modulation of the surface generation current by fluctuations in the surface potential.

The nonlinear redshift-space power spectrum of galaxies

Abstract: We study the power spectrum of galaxies in redshift space, with third order perturbation theory to include corrections that are absent in linear theory. We assume a local bias for the galaxies: i.e. the galaxy density is sampled from some local function of the underlying mass distribution. We find that the effect of the nonlinear bias in real space is to introduce two new features: first, there is a contribution to the power which is constant with wavenumber, whose nature we reveal as essentially a shot-noise term. In principle this contribution can mask the primordial power spectrum, and could limit the accuracy with which the latter might be measured on very large scales. Secondly, the effect of second- and third-order bias is to modify the effective bias (defined as the square root of the ratio of galaxy power spectrum to matter power spectrum). The effective bias is almost scale-independent over a wide range of scales. These general conclusions also hold in redshift space. In addition, we have investigated the distortion of the power spectrum by peculiar velocities, which may be used to constrain the density of the Universe. We look at the quadrupole-to-monopole ratio, and find that higher-order terms can mimic linear theory bias, but the bias implied is neither the linear bias, nor the effective bias referred to above. We test the theory with biased N-body simulations, and find excellent agreement in both real and redshift space, providing the local biasing is applied on a scale whose fractional r.m.s. density fluctuations are $< 0.5$.

Constant-voltage diode for over-voltage protection

Abstract: A constant-voltage diode has a first semiconductor region of a first conductivity type, an adjoining semiconductor region of a second conductivity type, a third semiconductor region of the second conductivity type adjoining the second semiconductor region, and a fourth semiconductor region of the first conductivity type partially surrounded by the second semiconductor region. At low reverse biases between a cathode electrode and an anode electrode, the behavior of the device is determined by the pn junction between the first and second semiconductor regions. As the reverse biasing increases, the depletion layers of that junction will reach the fourth semiconductor region, but the reverse bias at this time is insufficient to break down that junction. A further increase of reverse bias causes breakdown of the pn junction between the third and fourth semiconductor regions. This effect is achieved by suitable impurity concentrations in the semiconductor regions. A plurality of fourth semiconductor regions may be provided, and a bi-directional structure can be obtained by providing a polarity reversed structure with the first semiconductor region in common.

Band-to-band tunneling in a carbon nanotube metal-oxide-semiconductor field-effect transistor is dominated by phonon-assisted tunneling.

Abstract: Band-to-band tunneling (BTBT) devices have recently gained a lot of interest due to their potential for reducing power dissipation in integrated circuits. We have performed extensive simulations for the BTBT operation of carbon nanotube metal-oxide-semiconductor field-effect transistors (CNT-MOSFETs) using the nonequilibrium Green's function formalism for both ballistic and dissipative quantum transport. In comparison with recently reported experimental data (J. Am. Chem. Soc. 2006, 128, 3518-3519), we have obtained strong evidence that BTBT in CNT-MOSFETs is dominated by optical phonon assisted inelastic transport, which can have important implications on the transistor characteristics. It is shown that, under large biasing conditions, two-phonon scattering may also become important.

Scanning probe microscope having cantilever and detecting sample characteristics by means of reflected sample examination light

Abstract: A scanning probe microscope comprises a cantilever having a conductive probe positioned near a sample, an actuator for moving the sample to and away from the probe, a circuit for applying a bias voltage between the probe and sample to produce a tunnel current therebetween, a circuit for detecting the produced tunnel current, a circuit for detecting the amount of displacement of the probe resultant from interatomic forces acting between atomics of the probe and sample, thereby producing signals, a circuit for providing the actuator for feedback in response to the output signals from the circuit to retain constant the distance between the probe and sample, thereby causing the actuator to move the sample, a circuit for forming an STS image data from the detected tunnel current, a circuit for forming an STM image data from the detected tunnel current, and a circuit for forming an AFM image data. Thus, the STS, STP and AFM images are separately obtained simultaneously.