Showing papers on "Blisters published in 2005"

Thermal quenching of tissue

Abstract: The present invention provides a system for achieving erythema and/or mild edema in an upper layer of skin, without causing blisters, and without the risk of high fluence levels or critical need for cooling.

Suppression of blister formation and deuterium retention on tungsten surface due to mechanical polishing and helium pre-exposure

Abstract: Low-energy deuterium (D) plasma exposure on tungsten (W), which is an important material for ITER, results in blister formation on the surface. Blister formation increases both micron-sized dust production and D retention. Blister formation depends greatly on surface pre-treatment. Deuterium plasma exposure on mirror-finished powder metallurgy W at 500 K for 3 h forms a blister with a diameter of a few hundred micrometres on the surface. Blister formations on the mechanically-polished and helium-pre-exposed surfaces are drastically suppressed. Deuterium retention is also reduced on both the mechanically-polished surface and the helium-pre-exposed surface compared with that on the mirror-finished surface. The suppressive effect of blister formation on the mechanically-polished surface is maintained for 50 h. The size of blisters and D retention on mirror-finished surface exposed for 50 h increases by some degrees (500 µm, 7 × 1020 m−2) compared with that on mirror-finished surface exposed for 3 h (200 µm, 5 × 1020 m−2), but is not proportional to the exposure time. The saturation level of D retention even on blister-rich surfaces seems to be lower than an order of 1021 D2 m−2.

Blister and package system

Abstract: A blister and package system (1) made of a blister card (3) and an outer package (5) with unique interacting locking mechanisms (23). The blister card is inserted in the outer package and locks immediately without having to further process the outer package or the blister card. The user is able to expose the blisters from the outer package by disengaging the lock. The blister card includes a formable, pliable sheet material (7), into which one or more individual cavities or blisters (9) are formed. The separated cavities are loaded with product (11) and sealed with one or more layers of puncturable or tearable sheet material, such as aluminum foil (13). The blister card contains a stop (21), which may be one or more additional cavities that form an interference mechanism, or an interference blister cavity. The interference blister is trapped by a locking mechanism and stopped by a catch flap (41) included in the outer package.

Failure of Hydrided Zircaloy-4 Under Equal-Biaxial and Plane-Strain Tensile Deformation

Abstract: The fracture behavior of unirradiated Zircaloy-4 containing either solid hydride blisters or hydrided rims has been examined for the contrasting conditions of equal-biaxial and plane-strain tensile deformation at three temperatures (25°, 300°, and 375°C). Cold-worked and stress-relieved Zircaloy-4 sheet containing hydride blisters shows nearly identical failure strains in equal-biaxial and plane-strain tensile deformation for a wide range of blister or rim depths. In all cases, failure strains decrease rapidly with increasing hydride blister or rim thickness, especially in the ≤100 µm range. Test temperature has a significant effect on ductility with failure strains at 300° and 375°C being much greater than at room temperature. The results indicate that the ductility of material containing hydride rims/blisters greater than ≈ 30–40 µm deep is limited by crack growth, which occurs in a mode I manner at 25°C but in a mixed mode I/II manner at ≥300°C (and at higher failure strain levels).

Adhesion of polymer coatings studied by laser-induced delamination

Abstract: This paper concentrates on the laser-induced delamination technique, aimed at measuring the practical work of adhesion of thin polymer coatings on metal substrates. In this technique an infrared laser-pulsed beam is used to create an initial blister. Upon increasing the pulse intensity, the size of the blister grows, resulting in partial delamination of the film. In this work the blister profiles and the blister pressure were obtained from independent measurements. Alongside experiments, a simple model is developed to provide the equations necessary for calculating the blister strain energy, height, and the gas pressure inside the blister. The model is essentially based on an elastic behavior of the polymer film. The blister height and the blister pressure predicted by the model were confronted with the experimental observations and a fair agreement was found. The adhesion properties of the polyethylene terephthalate films on a steel substrate were characterized in terms of the maximum stress required for delamination and the practical work of adhesion. The relation between the two are discussed. Because the blister formation and subsequent delamination take place on a time scale of microseconds, it is argued that the viscous properties of the film do not manifest on this time scale and the contribution of plastic deformation of the film is rather small.

Investigation of hydrogen implantation-induced blistering in SiGe

Abstract: A systematic investigation of the hydrogen implantation-induced blister formation on the surface of Si 0.78 Ge 0.22 when annealed in the temperature range of 300–700 °C was carried out. The strain-relaxed Si 0.78 Ge 0.22 layers were grown epitaxially on 8-inch Si(1 0 0) substrates by reduced pressure chemical vapour deposition (RPCVD). These wafers were implanted with hydrogen, H 2 + , ions at 240 keV with a dose of 5 × 10 16 cm −2 . The formation of optically detectable blisters on the surface was observed using an optical microscope in Nomarski contrast mode. The width and depth of the blisters was determined with a profilometer. The characterization of the hydrogen implantation-induced damage and defects inside the Si 0.78 Ge 0.22 layer was performed using cross-sectional transmission electron microscopy (XTEM). The Arrhenius plot of blistering time versus annealing temperature revealed two different activation energies for the formation of blisters. In the low temperature regime (300–400 °C) an activation energy of 1.2 eV was obtained, while in the high temperature regime (400–700 °C) the activation energy was 0.38 eV. In analogy to the case in Si, the lower activation energy can be associated with the free atomic diffusion of hydrogen in Si 0.78 Ge 0.22 and the higher activation energy can be related to the hydrogen diffusion limited by trapping-detrapping phenomena. The depth of the broken blisters and the depth of the hydrogen-induced microcracks inside Si 0.78 Ge 0.22 came out to be around 1.05 μm, which matches quite well with the calculated (by Stopping and Ranges of Ions in Matter, SRIM code) concentration peak of the hydrogen distribution inside Si 0.78 Ge 0.22 for the case of 240 keV H 2 + implantation.

Substructures of Gas-Ion-Irradiation-Induced Surface Blisters in Silicon Studied by Cross-Sectional Transmission Electron Microscopy

Abstract: Internal structures of surface blisters and their precursors in Si formed by H + , D + and He + irradiation were examined by cross-sectional transmission electron microscopy (XTEM). The skin structures of H + -D + - and He + -blisters reflected the difference in the damage accumulation, and chemical interaction between the implant ion and silicon. These differences had a direct influence on the defect structures of the damaged layer, which played essential roles in the blistering mechanisms. It was found that blister skin thickness derived by grazing incidence electron microscopy (GIEM) and electron energy-loss spectroscopy, (EELS) was underestimated compared to direct measurement by XTEM. The origin of this discrepancy is discussed.

A method and a unit for producing blister packs by cutting a blister band

Abstract: A method and a relative unit (1) for producing blister packs (7) by cutting a blister band (4), according to which a band (4) with blisters (2) housing products is fed in a selected feeding direction (A), through subsequent stations: a band (4) verifying station, a closing station where the blister band is closed with a covering band, and to a cutting station (5) for cutting the closed blister band (4). In the cutting station (5), the closed blister band (4) is cut by progressive shearing, to obtain relative blister packs (7) detached from at least one strip (9a, 9b) or scrap longitudinal edge of the blister band (4). If portions of the blister band (4) considered unsatisfactory are detected in the control station, the subsequent shearing is performed partially or incompletely, so as to prevent detachment of the corresponding blister packs (8), considered faulty and destined to be rejected, from the strip (9a, 9b) of the band (4).

Reliable site for suction blister induction and harvesting.

Abstract: Background: Suction blister grafting is a useful modality of treatment of patients with resistant and stable vitiligo. However, there have been no detailed studies to find out the best donor site for blister formation. Methods: The study was conducted between the period of October 2004 and February 2005 in the dermatology department at a tertiary care center. Nine patients with vitiligo (focal vitiligo, 3; mucosal vitiligo, 2; acrofacial vitiligo, 2; vitiligo vulgaris, 1; and segmental vitiligo, 1) were selected for blister harvesting and grafting. The blisters were raised using the method described by Gupta et al. Results: Suction blisters were attempted to be raised at 52 sites, but only 38 blisters could be raised, 24 complete and 14 incomplete. Blisters were raised in all the three cases on the flexor aspect of the arm (100%), 15 of 17 cases (88.2%) on the flexor aspect of the forearm, 4 of 5 cases (80%) on the abdomen, 11 of 16 cases (68.7%) on the anterolateral thigh, and less frequently over leg or foot. Complete blisters were formed in 13/15 cases (86.6%) on the flexor aspect of the forearm, 6/11 cases (54.5%) on the anterolateral thigh, and in all cases over leg. Conclusion: The flexor aspect of the forearm is a good site for suction blister harvesting.

Device for selectively dispensing solid products from a blister strip retained in the device

Abstract: Device for safeguarding a blister strip (B) and enabling a tablet or the like to be dispensed from a respective housing on the blister strip, which is retained and protected within the device, this latter being formed from a single sheet of cardboard folded about the blister strip, the blisters of which extend through holes (4) provided in a part of the sheet, in the other part of which there being provided breakable knurlings defining removable discs (6) which are aligned with said holes to enable said discs to break with consequent detachment of said discs and expulsion of said tablets when the individual blisters of the blister strip are pressed with the finger of one hand.

The influence of the ion implantation temperature and the dose rate on smart-cut© in GaAs

Abstract: The dependence of hydrogen flux and substrate temperature during implantation on the smart-cutprocess in GaAs have been investigated in this paper. The lattice disorder in the samples was studied by ion beam analysis. It was found that both the flux and the implant temperature are significant for the smart-cut process. As the flux increases, the degree of exfoliation and the mean blister size increases, while the number density of blisters falls, indicating that blister evo- lution is enhanced at high dose rates.

Laser-Induced Blistering of Thin SiO2 on Si

Abstract: Compressive SiO2 films on Si substrates irradiated with sub-nanosecond laser pulses at fluences above 0.65 J/cm2 delaminate from the substrate. The volume of the blister created during the laser processing, determined through volume measurements of AFM and cross-sectional SEM data, is ∼0.1 μ3. Ion bombardment of the film prior to laser processing enhances the delamination, permitting the creation of blisters with volumes on the order of 0.3 μm3 for ion doses from 7.5 × 1012 to 3.0 × 1013 ions/cm2.

Embossed blister pack

Abstract: The invention herein relates to a method and apparatus for forming (or cold-forming) an embossed blister from a laminated film wherein an indicia is formed on the base of the blister In particular, the invention involves a single pass process of combining the formation of a blister and the formation of an indicia (embossing) on the blister, wherein the blister-forming pin contains a face with an indicia and is adapted to controllably stretch the laminated film during blister formation to minimize stretching of the film at the base of the blister The invention is particularly useful in manufacturing processes which involve the formation of blisters having laminated films which contain a metal foil and polymer layer, wherein improved control in the stretching of the laminate during blister formation is desirable

Hydrogen Blister Formation on Cold-Worked Tungsten with Layered Structure

Abstract: Low-energy ( 1021 m-2s-1) hydrogen plasma exposures were performed on cold-worked powder metallurgy tungsten (PM-W), recrystallized cold-worked PM-W and hot-worked PM-W Large blisters with a diameter of approximately 100–200 µm were observed only on the surface of cold-worked PM-W The blister formation mechanism has not been clarified thus far PM-W has a consisting of 1-µm-thick layers, which is formed by press-roll processing A detailed observation of the cross section of those blisters shows for the first time that the blisters are formed by cleaving the upper layer along the stratified layer These experimental results indicate that the manufacturing process of tungsten material is one of the key factors for blister formation on the tungsten surface

High-Z Dust Generation on Tungsten Surfaces due to Synergetic Erosion of Deuterium/Helium Plasma Exposures

Abstract: Low-energy and high-flux plasma exposures on tungsten surfaces result in blister/hole formation. Subsequent He plasma exposure at 2,000 K on the blister-rich surface forms a hole structure on the surface, including the blister surface, and some blisters collapse due to recrystallization and bubble formation on the blister skin. Grain ejections were observed after deuterium plasma exposure at 550 K on a W surface on which a hole structure had formed due to He pre-exposure at 1,600 K.

Apparatus for placing products into blisters of a blister band

Abstract: In an apparatus for filling a blister band with products, two or more work units are carried by relative carriages and have hoppers fed with different kinds of products. The products are then supplied to discharge conduits leading to the blisters of the band. Strips are fastened to lower ends of the discharge conduits and match with the upper surface of the blister band. The carriages are operated in a to-and-fro motion, so as to center, the lower ends of the discharge conduits with respect to the blisters, and to maintain this centering for a prefixed time. The holes remain coaxial to the lower ends of the conduits, situated above, to allow passage of one product from each discharge conduit to a blister.

Blister assembly for inhalation device

Abstract: A blister pack for an inhaler, the blister pack comprising a blister support ( 10 ) with a plurality of blisters ( 11 ), each blister ( 11 ) being hermetically sealed by a closure layer ( 20 ), the blister support ( 10 ) being in the form of an elongate strip, the blisters ( 11 ) being disposed one after the other along said blister support strip, said blister support ( 10 ) including two lateral profiles ( 15 ), one on either longitudinal side of said blister support ( 10 ), said lateral profiles being formed by alternating depressions ( 18 ) and projections ( 16 ), each projection including an abutment surface ( 17 ) for displacing said blister pack in accurate manner each time said inhaler is actuated, each abutment surface ( 17 ) being connected to the adjacent abutment surface ( 17 ) via a slide surface ( 19 ) formed by each depression.

Initiating, growing and cracking of hydrogen blisters

Abstract: The growing process of a hydrogen blister in a wheel steel was observed in situ with an optical microscope, and the fracture surfaces formed from broken blisters on a wheel steel and bulk metallic glass were investigated. The initiating, growing, cracking and breaking of hydrogen blisters are as follows. Supersaturated vacancies can increase greatly during charging and gather together into a vacancy cluster (small cavity). Hydrogen atoms become hydrogen molecules in the vacancy cluster and hydrogen molecules can stabilize the vacancy cluster. The small cavity becomes the nucleus of hydrogen blister. The blister will grow with entering of vacancies and hydrogen atoms. With increasing hydrogen pressure, plastic deformation occurs first, the hydrogen blister near the surface extrudes, and then cracks initiate along the wall of the blister with further increasing hydrogen pressure. A cracked blister can grow further through propagating of cracks until it breaks.

Initiating, growing and cracking of hydrogen blisters

Abstract: The growing process of a hydrogen blister in a wheel steel was observed in situ with an optical microscope, and the fracture surfaces formed from broken blisters on a wheel steel and bulk metallic glass were investigated. The initiating, growing, cracking and breaking of hydrogen blisters are as follows. Supersaturated vacancies can increase greatly during charging and gather together into a vacancy cluster (small cavity). Hydrogen atoms become hydrogen molecules in the vacancy cluster and hydrogen molecules can stabilize the vacancy cluster. The small cavity becomes the nucleus of hydrogen blister. The blister will grow with entering of vacancies and hydrogen atoms. With increasing hydrogen pressure, plastic deformation occurs first, the hydrogen blister near the surface extrudes, and then cracks initiate along the wall of the blister with further increasing hydrogen pressure. A cracked blister can grow further through propagating of cracks until it breaks.

Practical work of adhesion of polymer coatings studied by laser induced delamination

Abstract: Laser Induced Delamination is a novel technique aimed at measuring the practical work of adhesion of thin polymer coatings on metal substrates. In this technique a laser pulse is used to create initial blisters which initiate further delamination of the film under the blister pressure. A simple elastic model is developed to describe the formation of the blisters. The model predicts the values for the blister height and pressure, which are in fair agreement with the experimental results. In order to account for possible plastic deformations, simulations using a finite element model with a mixed mode cohesive zone were carried out. The calculated stress fields are in agreement with those predicted by the elastic model suggesting that the contribution of plastic deformation to the measured work of fracture is rather limited. Measurements are carried out on a number of samples, presenting ECCS steel substrate covered with 35 mu m thick polyethylene terephthalate (PET) film. The tensile stresses created in the film at the interface required for delamination are estimated at 7-8 MPa, which corresponds to the practical work of adhesion G = (0.6 +/- 0.1) J/m(2).

Effects of Fluorine Stability and Stress in SiOF Films on Film Adhesion

Abstract: Effects of fluorine stability and stress in SiOF films deposited by high-density plasma process on the generation of blisters were investigated by secondary ion mass spectrometry, thermal desorption spectroscopy (TDS), Fourier transform infrared spectroscopy (FTIR) and four point bending method using Top-SiN/TEOS/SiOF/Bottom-SiN multilayer structure. There are two kinds of fluorine in SiOF films, one is stable fluorine detected by FTIR, and the other is unstable one detected by TDS. Unstable fluorine in SiOF films is easy to diffuse and generates blisters at the interface of Top-SiN/TEOS films. Concentration of unstable fluorine is increased as the O 2 /SiH 4 flow ratio increases and at flow ratios higher than 2.38, blisters are generated. Only the stable fluorine is related with dielectric constant of SiOF film. Hydrogen in gas phase during SiOF-film deposition plays an important role for fluorine stabilization. Compressive stress in SiOF films does not cause blisters.

Blister for inhalers

Abstract: The invention relates to a blister for dosing an inhaler with a pharmaceutical preparation, characterised in that the blister is at least partially made from a desiccating plastic. The invention further relates to said blisters, filled with a pharmaceutical preparation.

Method of production of the protective and hardening layer in the shell of the antenna blister made out of quartz ceramics

Abstract: FIELD: aircraft industry; rocket industry; mechanical engineering and other industries; production of antenna blisters made out of quartz ceramics. ^ SUBSTANCE: the invention is pertaining to the aircraft and rocket equipment, in particular, to production of the antenna blisters for rockets and may find application in mechanical engineering and other branches of industry at production of items possessive a high strength in combination with radiotransparency in the whole range of temperatures of operation. The technical result of the invention is formation of a protective and hardening layer on the inner surface of the antenna blister, which possesses a sealing function, humidity resistance and a hardening effect. The method of production of the defensive and hardening layer in a shell of the antenna blister made out of quartz ceramics includes impregnation of then inner surface of the ceramic shell with an acetonic solution of a mixture of organosilicon and phenol-formaldehyde resins in the ratio of 1:2 accordingly, density of 0.940-0.980 g/cm3. The produced layer is dried at an indoor temperature within 3-6 hours, then polymerized at the temperature of 220-240°C within 4-6 hours. The impregnation conduct by a method of the communicating vessels in the closed volume or by the method of pouring over with water in the closed volume. ^ EFFECT: the invention ensures formation of a protective and hardening layer on the inner surface of the antenna blister, which possesses a sealing function, humidity resistance and a hardening effect. ^ 3 cl, 6 ex