Blisters

About: Blisters is a research topic. Over the lifetime, 980 publications have been published within this topic receiving 16229 citations.

Post-annealing temperature dependence of blistering in high-fluence ion-implanted H in Si

Abstract: This study examined the influence of post-annealing temperature on blister formation and growth in ion-implanted H in Si 〈1 0 0〉. Ion energy levels of 40 and 100 keV and fluences of 2 × 10 16 and 5 × 10 16 cm −2 were investigated. Post-annealing treatments were performed using the furnace annealing (FA) method with temperatures ranging from 200 to 600 °C for a duration of 1 h. Raman scattering spectroscopy (RSS), optical microscopy (OM), secondary ion mass spectrometry (SIMS), atomic force microscopy (AFM), and cross-sectional transmission electron microscopy (XTEM) were employed to explore the mechanisms behind the smart cut technique. The results revealed that variations among the transformation of the VH 3 (or V 2 H 6 ) defect complex phase into the Si(1 0 0):H bonding configuration phase (RSS results), the appearance of optically detectable blisters and craters (OM results), the average depth of craters (AFM results), the trapping of hydrogen atoms and gettering of oxygen atoms (SIMS results), and the damaged microstructures (XTEM results) against post-annealing temperature were in close correspondence. It was also found that the optimal post-annealing temperature for blister formation and growth was 550 °C.

Process for the production of blisters

Abstract: The invention concerns a process and device for the manufacture of blisters with high barrier properties using metal-plastic composite foils which can be deep drawn, in particular an aluminum-plastic composite foil which is clamped firmly in the clamping facility of a device for manufacturing blisters. The process is such that the composite foil is pre-stretched in a first step and then shaped into a blister in a second step.

Confined states in graphene quantum blisters

Abstract: Bilayer graphene samples may exhibit regions where the two layers are locally delaminated forming a so-called quantum blister in the graphene sheet. Electron and hole states can be confined in this graphene quantum blisters (GQB) by applying a global electrostatic bias. We scrutinize the electronic properties of these confined states under the variation of interlayer bias, coupling, and blister's size. The spectra display strong anti-crossings due to the coupling of the confined states on upper and lower layers inside the blister. These spectra are layer localized where the respective confined states reside on either layer or equally distributed. For finite angular momentum, this layer localization can be at the edge of the blister and corresponds to degenerate modes of opposite momenta. Furthermore, the energy levels in GQB exhibit electron-hole symmetry that is sensitive to the electrostatic bias. Finally, we demonstrate that confinement in GQB persists even in the presence of a variation in the inter-layer coupling.

Apparatus for placing products into blisters of a blister band

Abstract: In an apparatus for filling a blister band with products, two or more work units are carried by relative carriages and have hoppers fed with different kinds of products. The products are then supplied to discharge conduits leading to the blisters of the band. Strips are fastened to lower ends of the discharge conduits and match with the upper surface of the blister band. The carriages are operated in a to-and-fro motion, so as to center, the lower ends of the discharge conduits with respect to the blisters, and to maintain this centering for a prefixed time. The holes remain coaxial to the lower ends of the conduits, situated above, to allow passage of one product from each discharge conduit to a blister.