Blisters

About: Blisters is a research topic. Over the lifetime, 980 publications have been published within this topic receiving 16229 citations.

The formation of indicia in the base of a blister pack for transference to a body cast therein

Abstract: In a process for creating one or more blisters in a blister film (4), indicia are formed in the base of the blister in the final stage of a single pass of the blister forming punch (2) or pin. The blister is cold formed by advancing the pin (2) in a direction transversely relative to the plane of the film (4), towards and into engagement with a platen carrying indicia-forming die (12). The end face of the pin is formed with a mould for indicia complementary to the die (2), and movement of the pin (2) towards the platen draws and stretches film (4) predominantly from around the blister, thereby minimizing stretching of the film (4) at the base of the blister.

Fluence Dependence of Surface Morphology and Deuterium Retention in W Bulks and Nanocrystalline W Films Exposed to Deuterium Plasma

Abstract: The surface morphology of pure W bulks and nanocrystalline tungsten films was investigated after exposure to a low-energy (100 eV/D), high-flux (1.8 × 1021 D·m−2s−1) deuterium plasma. Nanocrystalline tungsten films of 6 μm thickness were deposited on tungsten bulks and exposed to deuterium plasma at various fluences ranging from 1.30 × 1025 to 5.18 × 1025 D·m−2. Changes in surface morphology from before to after irradiation were studied with scanning electron microscopy (SEM). The W bulk exposed to low-fluence plasma (1.30 × 1025 D·m−2) shows blisters. The blisters on the W bulk irradiated to higher-fluence plasma are much larger (~2 µm). The blisters on the surface of W films are smaller in size and lower in density than those of the W bulks. In addition, the modifications exhibit the appearance of cracks below the surface after deuterium plasma irradiation. It is suggested that the blisters are caused by the diffusion and aggregation of the deuterium-vacancy clusters. The deuterium retention of the W bulks and nanocrystalline tungsten films was studied using thermal desorption spectroscopy (TDS). The retention of deuterium in W bulks and W films increases with increasing deuterium plasma fluence when irradiated at 500 K.

Blister formation in ion-implanted GaAs: Role of diffusivity

Abstract: We have investigated the influence of substrate temperature during implantation, Timplant, on blister formation in GaAs:N layers produced by N ion implantation followed by rapid thermal annealing. Similar depths of popped blisters (craters) and damage profiles were observed for both low and high Timplant. This is in contrast to reports of Timplant-dependent blister formation in higher-diffusivity systems such as GaAs:H and Si:H. The apparent Timplant-insensitivity of blister formation in GaAs:N is likely due to the lower diffusivity of N in GaAs in comparison to that of H in GaAs and Si.