Blisters

About: Blisters is a research topic. Over the lifetime, 980 publications have been published within this topic receiving 16229 citations.

A study of blister formation in ALD Al 2 O 3 grown on silicon

Abstract: This work investigates the formation of blisters during annealing an Al 2 O 3 film grown by atomic layer deposition (ALD) on Si. This blistering phenomenon is shown to occur under an external load in the presence of a tensile residual stress: the total membrane stress is a super-imposition of the residual stress of the pre-stressed film and a concomitant stress due to change of blister profile. In the case of this Si/Al 2 O 3 system, the film is indeed pre-stressed and the hydrostatic pressure is caused by (i) the effusion of H 2 and H 2 O and (ii) Al 2 O 3 being a diffusion barrier.

Thermal behaviour of nitrogen implanted into zirconium

Abstract: Zirconium films were implanted with 15 N ions of energy 50 keV to a total fluence of 1 × 10 18 ions cm -2 in an attempt to study the formation process and thermal stability of ZrN layers produced by high fluence implantation of nitrogen. Subsequent to the implantation at room temperature, samples were annealed at temperatures of 300 °C–900 °C. The depth profiles of the implanted nitrogen were measured by nuclear reaction analysis using the 15 N(p,αγ) 12 C at E R = 429 keV, and the surfaces were examined by thin film X-ray diffraction (XRD) and scanning electron microscopy. There were many blisters 0.2–0.4 μm in diameter on the surface of the as-implanted samples and double peaks were observed in the nitrogen depth profiles; they were in both sides of the mean projected range. It was found that most of the blisters became extinct after annealing above 400 °C, and the XRD peak (111) intensity was increased with the increase in the annealing temperature. Moreover, 14 N and 15 N implantations were superimposed on Zr samples in order to study the atomic migration of nitrogen at each stage of high fluence implantation. It was found that the decrease in the peak at the deeper layers was related to blister extinction and nitrogen diffusion into underling zirconium which could be correlated with radiation damage induced by post-implanted ions.

Neutrophils resembling L. E. cells in artificial blisters.

Abstract: THIS IS a report of studies of the cellular elements in the fluid obtained from artificial blisters produced on the skin of patients with acute disseminated lupus erythematosus. From the reports of others 1 it would seem that L. E. cells may be formed in a patient with acute disseminated lupus erythematosus whenever plasma from such patients and neutrophilic leukocytes are placed together under favorable conditions. Unaltered plasma may not be obtained in blister fluid because the dermis may filter out some of its components. However, most of the blister fluid is filtered plasma. As neutrophilic leukocytes are present in blister fluid, it was thought that L. E. cells might also be present in blister fluid from patients with acute disseminated lupus erythematosus. As natural blisters are formed only rarely in disseminated lupus erythematosus, artificial blisters were produced with cantharides on patients wih lupus erythematosus, as well as on those