Blisters

About: Blisters is a research topic. Over the lifetime, 980 publications have been published within this topic receiving 16229 citations.

Blistering Behavior during Oxide Scale Formation on Steel Surface

Abstract: Blistering occurs when oxide scale is swollen during oxidation Blistered scale causes surface defect problems when it is rolled Present study investigated the nucleation and growth behavior of blistering when steel is oxidized at high temperature The following conclusions are drawn Blistering phenomenon has the nucleation and growth process At the nucleation stage scale is delaminated at the scale/metal interface The gas compositions inside blisters at this stage are CO, CO2, and N2 The steel surface inside blisters is oxidized while the stage changes from nucleation to growth At the growth stage, the separated steel surface from the scale is not oxidized

Delayed postburn blisters: an immunohistochemical and ultrastructural study.

Abstract: This study was performed in an attempt to further elucidate the pathogenesis of delayed postburn blistering. Two cases were studied ultrastructurally and immunohistochemically, 1 with blisters on the recipient site of autologous split-thickness skin grafts and the other on the donor site. Ultrastructurally, the basement membrane was on the roof of the blisters in both cases, except for a single small blister in the first case where it was on the dermal floor. In the blister roofs, the basement membrane showed small or marked segments of discontinuity. In the adjacent non-blistered healed skin, the basement membrane was usually continuous, and anchoring fibrils were present. Immunoperoxidase staining on frozen sections, using antibodies to laminin, laminin 5, collagen IV, and collagen VII, showed a mostly continuous linear pattern in the adjacent non-blistered skin, which often became discontinuous near the blisters and markedly discontinuous in the blister roofs. In the blister floors, weakly stained linear or granular deposits of some of these components were sometimes also present. The results of this study support discontinuity of the basement membrane as the main anomaly in delayed postburn blistering. Disturbance in the reassembly or local breakdown of the basement membrane components might be the underlying defect.

Process and device for the manufacture of blisters with high barrier properties

Abstract: The invention concerns a process and a device for manufacturing blisters with high barrier properties from a metal-plastic composite foil which can be deep drawn, in particular from an aluminum-plastic composite foil which is held fast in the clamping facility of a device for manufacturing blisters. In shaping the foil into one or more blisters, pressure is applied pneumatically or pneumatically and hydraulically to at least one side of the foil which stretches onto and over a lubricating layer or easy slip plate on the base of a die.

Investigation of hydrogen implantation-induced blistering in SiGe

Abstract: A systematic investigation of the hydrogen implantation-induced blister formation on the surface of Si 0.78 Ge 0.22 when annealed in the temperature range of 300–700 °C was carried out. The strain-relaxed Si 0.78 Ge 0.22 layers were grown epitaxially on 8-inch Si(1 0 0) substrates by reduced pressure chemical vapour deposition (RPCVD). These wafers were implanted with hydrogen, H 2 + , ions at 240 keV with a dose of 5 × 10 16 cm −2 . The formation of optically detectable blisters on the surface was observed using an optical microscope in Nomarski contrast mode. The width and depth of the blisters was determined with a profilometer. The characterization of the hydrogen implantation-induced damage and defects inside the Si 0.78 Ge 0.22 layer was performed using cross-sectional transmission electron microscopy (XTEM). The Arrhenius plot of blistering time versus annealing temperature revealed two different activation energies for the formation of blisters. In the low temperature regime (300–400 °C) an activation energy of 1.2 eV was obtained, while in the high temperature regime (400–700 °C) the activation energy was 0.38 eV. In analogy to the case in Si, the lower activation energy can be associated with the free atomic diffusion of hydrogen in Si 0.78 Ge 0.22 and the higher activation energy can be related to the hydrogen diffusion limited by trapping-detrapping phenomena. The depth of the broken blisters and the depth of the hydrogen-induced microcracks inside Si 0.78 Ge 0.22 came out to be around 1.05 μm, which matches quite well with the calculated (by Stopping and Ranges of Ions in Matter, SRIM code) concentration peak of the hydrogen distribution inside Si 0.78 Ge 0.22 for the case of 240 keV H 2 + implantation.